• Journal of the Optical Society of Korea
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• 제10권3호
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• pp.130-142
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• 2006

Lab-on-a-chip technology is attracting great interest because the miniaturization of reaction systems offers practical advantages over classical bench-top chemical systems. Rapid mixing of the fluids flowing through a microchannel is very important for various applications of microfluidic systems. In addition, highly sensitive on-chip detection techniques are essential for the in situ monitoring of chemical reactions because the detection volume in a channel is extremely small. Recently, a confocal surface enhanced Raman spectroscopic (SERS) technique, for the highly sensitive biological analysis in a microfluidic sensor, has been developed in our research group. Here, a highly precise quantitative measurement can be obtained if continuous flow and homogeneous mixing condition between analytes and silver nano-colloids are maintained. Recently, we also reported a new analytical method of DNA hybridization involving a PDMS microfluidic sensor using fluorescence energy transfer (FRET). This method overcomes many of the drawbacks of microarray chips, such as long hybridization times and inconvenient immobilization procedures. In this paper, our recent applications of the confocal Raman/fluorescence microscopic technology to a highly sensitive lab-on-a-chip detection will be reviewed.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.13-22
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• 2015

LED (Light Emitting Diode) lighting is gaining more and more market penetration as one of the global warming countermeasures. LED is the next generation of fusion source composed of epi/chip/packaging of semiconductor process technology and optical/information/communication technology. LED has been applied to the existing industry areas, for example, automobiles, TVs, smartphones, laptops, refrigerators and street lamps. Therefore, LED makers have been striving to achieve the leading position in the global competition through development of core source technologies even before the promotion and adoption of LED technology as the next generation growth engine with eco-friendly characteristics. However, there has been a point of view on the cost compared to conventional lighting as a large obstacle to market penetration of LED. Therefore, companies are developing a Chip-Scale Packaging (CSP) LED technology to improve performance and reduce manufacturing costs. In this study, we perform patent analysis associated with Flip-Chip CSP LED and flow chart for promising technology forecasting. Based on our analysis, we select key patents and key patent players to derive the business strategy for the business success of Flip-Chip CSP PKG LED products.

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.513-519
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• 2006

본 연구에서는 유리(glass)와 석영(quartz)을 재질로 사용하여 MEMS(micro-electro mechanical systems) 공정을 통해 전기영동(electrophoresis)을 위한 microchip을 제작하였다. UV 광이 실리콘(silicon)을 투과하지 못하는 점에 착안하여, 다결정 실리콘(polycrystalline Si, poly-Si) 층을 채널 이외의 부분에 증착시킨 광 차단판(optical slit)에 의해 채널에만 집중된 UV 광의 신호/잡음비(signal-to-noise ratio: S/N ratio)를 크게 향상시켰다. Glass chip에서는 증착된 poly-Si 층이 식각 마스크(etch mask)의 역할을 하는 동시에 접합표면을 적절히 형성하여 양극 접합(anodic bonding)을 가능케 하 였다. Quartz 웨이퍼에 비해 불순물을 많이 포함하는 glass 웨이퍼에서는 표면이 거친 채널 내부를 형성하게 되어 시료용액의 미세한 흐름에 영향을 미치게 된다. 이에 따라, HF와 $NH_4F$ 용액에 의한 혼합 식각액(etchant)을 도입하여 표면 거칠기를 감소시켰다. 두 종류의 재질로 제작된 채널의 형태와 크기를 관찰하였고, microchip electrophoresis에 적용한 결과, quartz과 glass chip의 전기삼투 흐름속도(electroosmotic flow velocity)가 0.5와 0.36 mm/s로 측정되었다. Poly-Si 층에 의한 광 차단판의 존재에 의해, peak의 S/N ratio는 quartz chip이 약 2배 수준, glass chip이 약 3배 수준으로 향상되었고, UV 최대흡광 감도는 각각 약 1.6배 및 1.7배 정도 증가하였다.

• Journal of Communications and Networks
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• 제11권1호
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• pp.1-10
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• 2009

In this paper, we propose a chip-level detection and a spectral-slice scheme for the tunable-transmitter/fixed-receiver (TTFR)-based asynchronous spectral phase-encoded optical codedivision multiple-access (CDMA) system combined with timeencoding. The chip-level detection can enhance the tolerance of multiple access interference (MAI) because the channel collision does not occur as long as there is at least one weighted position without MAI. Moreover, the spectral-slice scheme can reduce the interference probability because the MAI with the different frequency has no adverse effects on the channel collision rate. As a result, these techniques mitigate channel collisions. We analyze the channel collision rate theoretically, and show that the proposed system can achieve a lower channel collision rate in comparison to both conventional systems with and without the time-encoding method.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.269-274
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• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.319-322
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• 1999

In this paper, we report characteristics of a internal chip of LiNbO$_3$ modulator with low-driving-voltage at 150nm wavelength. A Ti diffusion method for LiNbO$_3$ optical waveguide and a buffer layer for improving phase velocity mismatch between optical and microwave waves were employed. The traveling-wave coplanar waveguide electrode of 35mm is used for reducing the driving voltage. From this work, wideband modulation of 10㎓ and low-driving voltage of 3.9volts are realized.

• 한국광학회지
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• 제18권2호
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• pp.111-116
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• 2007

새로운 광원으로 각종 조명장치에 응용이 되는 고출력 LED 광원의 물리적 구조로부터 시뮬레이션을 통하여 광학적 특성을 분석하였다. 설계한 LED 광원이 신뢰할 수 있는 결과를 얻기 위하여 die chip과 reflector cup의 구조적 특성을 변화시켰으며. 그 결과 Lambertian 형태의 배광 분포를 가지며. 반치 폭(Viewing angle)은 $140^{\circ}$, Total Included Angle은 $160^{\circ}$를 갖는 고출력 LED 광원을 설계하였다.

• 전자공학회논문지
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• 제50권7호
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• pp.131-139
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• 2013

기존 전기적 상호 연결을 사용한 네트워크-온-칩(Network-on-Chip, NoC)의 전력 및 성능 한계를 보완하고자 광학적 상호연결을 이용하는 하이브리드 광학 네트워크-온-칩(HONoC)이 등장하였다. 하지만 HONoC에서는 광학적 소자 특성으로 인해 서킷 스위칭을 사용함으로써 경로 충돌이 빈번하게 발생하며 이로 인해 지연 시간 불균형의 문제가 심화되어 전체적인 시스템 성능에 악영향을 미치게 된다. 본 논문에서는 경로 충돌을 최소화 시켜 지연 시간을 최적화 할 수 있는 새로운 태스크 매핑 알고리즘을 제안하였다. HONoC 환경에서 태스크를 각 Processing Element (PE)에 할당하고 경로 충돌을 최소화하며, 부득이한 경로 충돌의 경우 워스트 케이스 (worst case) 지연 시간을 최소화 할 수 있도록 하였다. 모의실험 결과를 통해 무작위 매핑 방식, 대역폭 제한 매핑 방식과 비교하여, 제안된 알고리즘이 $4{\times}4$ 메시 토폴로지에서는 평균 43%, $8{\times}8$ 메시 토폴로지에서는 평균 61%의 지연 시간 단축 효과가 있음을 확인할 수 있었다.

• 대한전자공학회논문지SD
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• 제45권6호
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• pp.119-124
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• 2008

트랜스임피던스 증폭기는 전체 광 수신기의 성능을 결정하는 가장 핵심적인 블록으로써 높은 트랜스임피던스 이득과 기가 비트급의 넓은 대역폭을 요구한다. 본 논문에서는 아날로그 어댑티브 이퀄라이저를 이용하여 트랜스임피던스 증폭기의 대역폭을 보상하고, 리미팅 증폭기를 이용하여 전체 트랜스임피던스 이득을 증가 시키는 단일 칩 광 수신기의 아날로그 회로를 제안한다. $0.13{\mu}m$ CMOS 공정을 이용하여 설계한 광 수신기는 포스트 레이아웃 시뮬레이션 결과, $120dB{\Omgea}$의 트랜스임피던스 이득과 5.88GHz의 대역폭을 갖는다. 수동 인덕터 소자를 사용하는 대신 네거티브 임피던스 컨버터 회로를 적용함으로써 $0.088mm^2$의 매우 작은 칩 사이즈를 갖는다.

• 전자통신동향분석
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• 제32권6호
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.