• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.100-105
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• 2004

The influencing factors on the OPC (optical proximity correction) results are quantitatively analyzed using OPCed L/S patterns. ${\sigma}$ values of proximity variations are measured to be 9.3 nm and 15.2 nm for PR-A and PR-B, respectively. The effect of post exposure bake condition is assessed. 16.2 nm and 13.8 nm of variations are observed. Proximity variations of 11.6 nm and 15.2 nm are measured by changing the illumination condition. In order not to seriously deteriorate the OPC, these factors should be fixed after the OPC rules are extracted. Proximity variations of 11.4, 13.9, and 15.2 nm are observed for the mask mean-to-targets of 0, 2 and 4 nm, respectively. The decrease the OPC grid size from 1 nm to 0.5 nm enhances the correction resolution and the OCV is reduced from 14.6 nm to 11.4 nm. The enhancement amount of proximity variations are 9.2 nm corresponding to 39% improvement. The critical dimension (CD) uniformity improvement for adopting the small grid size is confirmed by measuring the CD uniformity on real SRAM pattern. CD uniformities are measured 9.9 nm and 8.7 nm for grid size of 1 nm and 0.5 nm, respectively. 22% improvement of the CD uniformity is achieved. The decrease of OPC grid size is shown to improve not only the proximity correction, but also the uniformity.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.454-459
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• 2013

Recently, remote phosphors have been reported for application to white LEDs to provide enhanced phosphor efficiency compared with conventional phosphor-based white LEDs. In this study, a remote phosphor was produced by coating via screen printing on a glass substrate with different numbers of phosphor coating. The paste consists of phosphor, lowest softening glass frits, and organic binders. The remote phosphor could be well controlled by varying the phosphor content rated paste. After mounting the remote phosphor on top of a blue LED chip, CCT, CRI, and luminance efficiency were measured and values of 5300 K, 62, and 117 lm/W were respectively obtained in the 80 wt% phosphor with 3 coating layers sintered at $800^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.614-619
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• 2013

Recently, remote phosphor is reported for white LED enhancing of phosphor efficiency compared with conventional phosphor-based W-LED. In this study, Remote phosphor was produced by screen printing coating on glass substrate with phosphor contents rated paste and heat treatment. The paste consists of phosphor, lowest softening glass frit and organic binders. Remote phosphor can be well controlled by varying the phosphor content rated paste. After mounting remote phosphor on top of blue LED chip, CCT, CRI, and luminance efficiency were measured. The measurement results showed that CCT, CRI, and luminance efficiency were 6,645, 68, and 1,16l m/W in phosphor 80 wt.% remote phosphor sintered at $600^{\circ}C$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.1
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• pp.20-25
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• 2014

There are several severe problems for LED device, the next generation's economy green lighting: as the temperature increases, the lamp efficiency decreases; if the temperature is over $80^{\circ}C$, the lifetime of lighting decreases; Red Shift phenomenon that wavelength of spectrum line moves toward long wavelength occurs; and optical power decreases as $T_j$ increases. Thus, Heat sink design that can minimize the heat of LED device is currently in progress. While the thermal resistance of COB Type LED was reduced by direct coupling of LED chip to the board, residential 13.5W requires Heat sink in order resolve heat issue. This study designed Heat Sink suitable for residential 13.5W COB LED down-light and selected the optimum Fin thickness through flow simulation that packaged the designed Heat Sink and 13.5W COB. And finally it analyzed and evaluated the thermal modes using contacting thermometer.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.221-224
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• 2014

We present a method for manufacturing a TIM used for packaging a high-power LED. In this method a mixture of diamond powder and hydrogen peroxide is used as a filler epoxy. The thermal resistance of the TIM with hydrogen peroxide was improved by about 30% over the thermal resistance of the TIM without hydrogen peroxide. We demonstrate that as a result the heat generated from the chip is easily dissipated through the TIM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.849-856
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• 2012

Chip on board type white light emitting diode on metal core printed circuit board with high thixotropy silicone is fabricated by vacuum printing encapsulation system. Encapsulant is chosen by taking into account experimental results from differential scanning calorimeter, shearing strength, and optical transmittance. We have observed that radiant flux and package efficacy are increased from 336 mW to 450 mW and from 11.9 lm/W to 36.2 lm/W as single dome diameter is varied from 2.2 mm to 2.8 mm, respectively. Double encapsulation structure with 2.8 mm of dome diameter shows further significant enhancement of radiant flux and package efficacy to 667 mW and 52.4 lm/W, which are 417 mW and 34.8 lm/W at single encapsulation structure, respectively.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.369-374
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• 2008

A novel fiber optic surface plasmon resonance (SPR) sensor using cyclic olefin copolymer (COC) prism with the spectral modulation is presented. The SPR sensor chip is fabricated using the SU-8 photolithography, Ni-electroplating and COC injection molding process. The sidewall of the COC prism is partially deposited with Au/Cr (45/2.nm thickness) by e-beam evaporator, and the thermal bonding process is conducted for micro fluidic channels and optical fibers alignment. The SPR spectrum for a phosphate buffered saline (0.1.M PBS, pH.7.2) solution shows a distinctive dip at 1300.nm wavelength, which shifts toward longer wavelength with respect to the bovine serum albumin (BSA)concentrations. The sensitivity of the wavelength shift is $1.16\;nm{\cdot}{\mu}g^{-1}{\cdot}{\mu}l^{-1}$. From the wavelength of SPR dips, the refractive indices (RI) of the BSA solutions can be theoretically calculated using Kretchmann configuration, and the change rate of the RI was found to be $2.3{\times}10^{-5}RI{\cdot}{\mu}g^{-1}{\cdot}l^{-1}$. The realized fiber optic SPR sensor with a COC prism has clearly shown the feasibility of a new disposable, low cost and miniaturized SPR biosensor for biochemical molecular analyses.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1514-1519
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• 2009

We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.361-365
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• 2005

An absolute interferometer system with multiple point-sources is devised for tile 3-D measurement of rough surface profiles. The positions of the point sources are determined to be the system parameters that influence the measurement accuracy, so they are calibrated precisely prior to performing actual measurements. For the calibration, a CCD camera composed of a two-dimensional array of photo-detectors was used. Performing optimization of the cost function constructed with phase values measured at each pixel on the CCD camera, the position coordinates of each point source is precisely determined. Measurement results after calibration performed for the warpage inspection of chip scale packages (CSPs) demonstrate that the maximum discrepancy is 9.8 mm with a standard deviation o( 1.5 mm in comparison with the test results obtained by using a Form Taly Surf instrument.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.