• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.64-71
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• 1994

In this study, optimizing BPOFs are encoded by Simulated Annealing algorithm that is widely used among the optimization algorithms. Two BPOFs are trained by digit patterns, 0~9, and the digits each having 4 intraclass patterns are multiplexed. When each digit is encoded by four bit binary code, from the results of computer simulation, the correlation pezk is shown at binary value 1 position among the spatially separated four positions at the correlation plane And then, the designed BPOFs are implemented by CGH technique. Through the optical correlation experiment, satisactory results are achieved, inspite of some experimental errors and information loss owing to the amplitude type CGH filter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.326-332
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• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.261-266
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• 1992

In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.152-157
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• 2000

Post-deposition vacuum annealing effects in electron-bearn-evaporated indium tin oxide (ITO) films have been investigated by the change of transmittance, sheet resistance and crystalline structure with annealing temperature ( $200-335^{\circ}C$) and oxygen partial pressure ($1\times^10^{-5}-1$\times10^{-4} torr$) in air and vacuum. The sarnples were polycrystalline films with a preferred orientation in the (222) plan. High quality films with sheet resistance as low as 62 Q/O and transmittance over 99% (absentee layer at 500 nm) have been obtained by suitably controlling the vacuum annealing pararneters.neters.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.55-59
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• 2020

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.201-203
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• 2016

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10⁻⁵ Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10⁻⁵ Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

• Journal of IKEEE
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• v.25 no.1
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• pp.47-52
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• 2021

The ~185 nm thick ITO films deposited by high frequency magnetron sputtering were annealed at 100% humidity. Annealing was performed at 200℃, 250℃, 300℃, 350℃, 400℃ and 450℃ for 4 hours, respectively. Variations in resistivity, electron concentration, and mobility by high-humidity annealing were investigated. The stress change was estimated from the XRD results, and the surface morphology of films was observed through the FESEM micrographs. After measuring the light transmittance, the energy-band-gap was obtained and analyzed with the Burnstein-Moss effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2287-2292
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• 2012

In this study, $Co^{60}$ gamma-ray induced loss on Ge-doped single mode (SM) fiber has been measured. Gamma-ray is irradiated for 4 hours at the dose rate of 0.5 kGy/hr, 2 kGy/hr, 8 kGy/hr. Consequently, gamma-ray induced loss based on radiation effects in Ge-doped SM fiber occur significantly. Furthermore, dose rate effect was observed, that dose rate using the same total dose increased higher, then optical fiber loss increased more. Also annealing effect was observed, that the loss after irradiation, increased higher, then the recovery rate of loss was increased. This results are foreseen to be base data in the future radiation-hardened optical fiber study.