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Effect of Post-annealing Treatment on Copper Oxide based Heterojunction Solar Cells  

Kim, Sangmo (Department of Electrical Engineering Gachon University)
Jung, Yu Sup (CNI Technology)
Kim, Kyung Hwan (Department of Electrical Engineering Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.19, no.2, 2020 , pp. 55-59 More about this Journal
Abstract
Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.
Keywords
CuO; Sputtering; Heterojunction; Solar cell; Post-annealing;
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Times Cited By KSCI : 2  (Citation Analysis)
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