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http://dx.doi.org/10.7471/ikeee.2021.25.1.47

Electrical and optical properties of ITO films annealed at high humidity  

Ma, Tae Young (Dept. of Electrical Engineering & ERI, Gyeongsang National University)
Park, Ki Cheol (Dept. of Semiconductor Engineering & ERI, Gyeongsang National University)
Publication Information
Journal of IKEEE / v.25, no.1, 2021 , pp. 47-52 More about this Journal
Abstract
The ~185 nm thick ITO films deposited by high frequency magnetron sputtering were annealed at 100% humidity. Annealing was performed at 200℃, 250℃, 300℃, 350℃, 400℃ and 450℃ for 4 hours, respectively. Variations in resistivity, electron concentration, and mobility by high-humidity annealing were investigated. The stress change was estimated from the XRD results, and the surface morphology of films was observed through the FESEM micrographs. After measuring the light transmittance, the energy-band-gap was obtained and analyzed with the Burnstein-Moss effect.
Keywords
ITO films; sputtering; annealing; XRD; Burnstein-Moss effect;
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