• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.3
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• pp.567-571
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• 2012

To design the long-haul optical communication system, we need to decide the type of optical fiber and optical amplifier, span length of optical amplifier, dispersion compensation method, optical signal power, etc. Therefore, we need to predict the performance of optical communication system when we change one of the system parameters. In this paper, we investigate the method of predicting the maximum transmission length of the designed optical communication system and finding the optimum optical signal power to obtain the maximum transmission length.

• ETRI Journal
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• v.31 no.6
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.109-120
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• 2005

In this paper, bit error rate (BER) characteristics, sensitivity and minimum allowable launching power are numerically investigated as a function of amplifier spacing that consisted of 1,200 km WDM systems with MSSI method. It is conformed that the sensitivity and minimum allowable launching power are gradually degraded as amplifier spacings are gradually expanded, but those are not largely affected by modulation format. The sensitivity of RZ transmission system is smaller than that of NRZ transmission system, but minimum allowable launching power of NRZ transmission system is smaller than that of RZ transmission system. And, it is confirmed that the best amplifier spacing in NRZ and RZ transmission system is less than 50 km, because the sensitivity and minimum allowable launching power are less affected by fiber dispersion, channel wavelength and pump light power.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.68-79
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• 1992

In the high speed analog system satellite communication system, video signal processing and optical fiber interface circuits, GaAs high gain operational amplifier is advantageous due to obtain a high gain because of its low transconductance and other drawbacks, such as low frequency dispersion and process variation. Therefore in this paper, a circuit techniques for improving the voltage gain for GaAs MESFET amplifier is presented. Also, various types of existing current mirror and current mirror proposed are compared.To obtain the high differential gain, bootstrap gain enhancement technique is used and common mode feedback is employed in differential amplifier.The simulation results show that gain is higher than that of basic amplifier about 18.6dB, and stability and frequency performance of differential amplifier are much improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.197-200
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• 2000

All-optical NOR logic device was realized by use of two pump signals with a single wavelength and a semiconductor optical amplifier(SOA). Specially, Mach-Zehnder(MZ) modulator was used for an external modulation of the pump signals. To obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier(EDFA) at the input of the SOA. Pump and probe signals are obtained from a DFB laser diode(${\lambda}_p$=1554 nm) and a tunable laser diode(${\lambda}_s$=1535 nm), respectively. The operation characteristics of the NOR logic device are successfully measured and demonstrated at the modulation frequency of 4.83 MHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.443-450
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• 2014

This paper presents a 20-Gb/s optical receiver circuit fabricated with standard 65-nm CMOS technology. Our receiver circuits are designed with consideration for parasitic inductance and capacitance due to bonding wires connecting the photodetector and the circuit realized separately. Such parasitic inductance and capacitance usually disturb the high-speed performance but, with careful circuit design, we achieve optimized wide and flat response. The receiver circuit is composed of a transimpedance amplifier (TIA) with a DC-balancing buffer, a post amplifier (PA), and an output buffer. The TIA is designed in the shunt-feedback configuration with inductive peaking. The PA is composed of a 6-stage differential amplifier having interleaved active feedback. The receiver circuit is mounted on a FR4 PCB and wire-bonded to an equivalent circuit that emulates a photodetector. The measured transimpedance gain and 3-dB bandwidth of our optical receiver circuit is 84 $dB{\Omega}$ and 12 GHz, respectively. 20-Gb/s $2^{31}-1$ electrical pseudo-random bit sequence data are successfully received with the bit-error rate less than $10^{-12}$. The receiver circuit has chip area of $0.5mm{\times}0.44mm$ and it consumes excluding the output buffer 84 mW with 1.2-V supply voltage.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.515-520
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• 2003

Characteristics of an amplifier with repetition rate of a few KHz is investigated. The continuous flash lamp pumped Nd:YAG laser head is used as an amplifier. The thermally induced birefringence of the laser medium is compensated and the depolarization is reduced to 5% in a double-pass amplifier. The amplification factor of a four pass amplifier reaches to about 3.2 at the repetition rate 5-10 KHz and the pulse width is lengthened from 40 ns to 48 ns.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.151-154
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• 2002

All-optical OR logic gate is realized by use of gain saturation and wavelength conversion in the semiconductor optical amplifiers (SOA). It is operated by the nonlinearity of the SOA gain and hence to obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier (EDFA) at the input of the SOA. The operation characteristics of all-optical OR logic gate are successfully measured at 2.5 Gbit/s.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.12B
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• pp.809-814
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• 2007

In this paper, we proposed new method of a bidirectional WDM-PON transmission using suppressed optical carreir(SOC) and reflective semi-conductor optical amplifier(RSOA) based on WDM-PON. while LiNbO3 mach zehnder modulator(LN-MZM) generates 5GHz modulated SOC for uplink at central office(CO), RSOA at CO modulates the downstream data. At optical network units(ONUs), Another RSOA modulates the SOC light source for uplink at ONU and uplink data are up-converted to the 5 GHz already modulated SOC using LN-MZM.

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.273-274
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• 2007