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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems

  • Lee, Jong-Min (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Min, Byoung-Gue (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Seong-Il (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Lee, Kyung-Ho (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Hae-Cheon (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2009.05.14
  • Accepted : 2009.08.26
  • Published : 2009.12.31
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Abstract

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

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References

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