• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.113-115
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• 2000

The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 $A/cm^2$, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.5
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• pp.420-423
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• 2020

This study proposes an indirect constant voltage control algorithm for hybrid solid-state transformers (HSSTs) by using primary side information. Considering the structure of HSSTs, measuring voltage and current information on the primary side of a transformer is necessary to control the converter and inverter of the power converter. The secondary side output voltage is measured to apply the conventional secondary side constant voltage control algorithm, and thus, the digital control board requires the same rated insulation voltage as that of the transformer. To solve this problem, the secondary voltage of the transformer obtained from the tap voltage is used. Moreover, output voltage decreases as load increases because the proposed indirect constant voltage control scheme does not consider the cable impedance between the secondary output terminal and the load. This study also proposes a technique for compensating the secondary output voltage by using the primary current of the transformer and the resistance value of the cable. An experiment is conducted using a scale-down HSST prototype consisting of a 660 V/220 V tap transformer. The problem of the proposed indirect constant voltage control strategy and the improvement effect due to the application of the compensation method are compared using the derived experimental results.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.4
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• pp.491-497
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• 2018

Most of the applications for distribution system operation highly rely on the voltage and current managements from the field devices. Voltage from the remote controlled switch contains unacceptably large measurement error due to the nonlinear characteristics of the bushing potential transformer. This paper proposes a new voltage magnitude estimation method by calculating voltage drop using current measurement, line impedance and loads deployment data. Contract demand power and pole transformer capacity managed by NDIS are used as a key element to improve accuracy of the proposed method. Various case studies using Matlab simulation have been performed to verify feasibility of the propose voltage estimation method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.

• Journal of IKEEE
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• v.25 no.2
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• pp.344-349
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• 2021

This paper proposes a structure in which Trench SiO₂ is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown voltage and size of each pillar, which reduces the size by growing SiO₂ after trenching has no field effect inside of that. At 4.5kV the same breakdown voltage, it was confirmed that the On-state voltage drop improved by about 58%, 19% compared to Field Stop IGBT and conventional Super Junction IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.401-406
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• 2005

Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.361-365
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• 2019

Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.