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http://dx.doi.org/10.4313/JKEM.2012.25.4.270

A Study on 600 V Super Junction Power MOSFET Optimization and Characterization Using the Deep Trench Filling  

Lee, Jung-Hoon (Department of Photovoltaic Engineering, Far East University)
Jung, Eun-Sik (Maple Semiconductor, Incorporated)
Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.4, 2012 , pp. 270-275 More about this Journal
Abstract
Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.
Keywords
Power device; Breakdown voltage; Deep trench; Super junction; MOSFET;
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Times Cited By KSCI : 1  (Citation Analysis)
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