• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.369-375
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• 2006

[ $(Ba_{0.5}Sr_{0.5})_{0.99}Co_{x}Fe_{1-x}O_{3-{\delta}}$ ] [x=0.8, 0.2](BSCF) powders were synthesized by a Glycine-Nitrate Process (GNP) and the electrochemical performance of the BSCF cathode on a scandia stabilized zirconia, $[(Sc_{2}O_3)_{0.11}(ZrO_2)_{0.89}]-1Al_{2}O_3$ was investigated. In order to prevent unfavorable solid-state reactions between the cathode and zirconia electrolyte, a GDC ($Gd_{0.1}Ce_{0.9}O_{2-{delta}}$) buffer layer was applied on ScSZ. The BSCF (x = 0.8) cathode formed on GDC(Buffer)/ScSZ(Disk) showed poor electrochemical property, because the BSCF cathode layer peeled off after the heat-treatment. On the other hand, there were no delamination or peel off between the BSCF and GDC buffer layer, and the BSCF (x = 0.2) cathode exhibited fairly good electrochemical performances. It was considered that the observed phenomenon was associated with the thermal expansion mismatch between the cathode and buffer layer. The ohmic resistance of the double layer cathode was slightly lower than that of the single layer BSCF cathode due to the incorporation of platinum particle into the BSCF second layer.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.137-141
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• 2004

In this paper, a thermopneumatic PMDS (polydimethlysiloxane) micropump with nozzle/diffuser elements is presented. The micropump is composed of nozzle/diffuser elements as dynamic valves, an actuator consisting of a circular PDMS diaphragm and a Cr/Au heater on a glass substrate. Four PDMS layers are used for fabrication of an actuator chamber, actuator diaphragm by a spin coating process, spacer layer, and nozzle/diffuser by the SU-8 molding process. The radius and thickness of the actuator diaphragm is 2 mm and 30 ${\mu}{\textrm}{m}$, respectively. The length and the conical angle of the nozzle/diffuser elements are 3.5 mm and 20$^{\circ}$, respectively. The actuator diaphragm is driven by the air cavity pressure variation caused by ohmic heating and natural cooling. The flow rate of the micropump in the frequency domain is measured for various duty cycles of the square wave input voltage. When the square wave input voltage of 5 V DC is applied to the heater, the maximum flow rate of the micropump is 44.6 ${mu}ell$/min at 100 Hz with a duty ratio of 80% under the zero pressure difference.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.77-81
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• 2007

Pentacene was dissolved in N-methyspyrrolidone (NMP) and mixed with poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate) (PEDOT:PSS). The solution color changed from deep purple to intense yellow. As the dissolution time increased, visible absorption decreased and ultraviolet (UV) absorption increased. PEDOT:PSS or Pentacene-PEDOT:PSS was spin-coated to control the layer thickness. Three-layered Schottky diodes consisting of Al, PEDOT:PSS or PEDOT:PSS-pentacene, and Au with thickness of 300nm, respectively, were fabricated. The current densities of $4.8{\mu}A/cm^2$ at 2.5MV/m and $660{\mu}A/cm^2$ at 1.9MV/m were obtained for the Au/PEDOT:PSS/Al and Au/Pentacene-PEDOT:PSS/Al Schottky diodes, respectively. The current density of the Schottky diode was enhanced by about two orders of magnitude by doping pentacene to PEDOT:PSS.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.415-417
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• 2009

A low temperature decal (LTD) transfer method is tried to fabricated hydrocarbon (HC) membrane based MEA. Sandwiched structures of outer ionomer/catalyst/carbon coating/substrate, which had been developed for Nafion membrane, are used for transfer of catalyst to the HC membrane. Performances of the HC MEA before and after 500hr continuous operation are compared and it is found that a severe delamination occurs at the interface between the HC membrane and the catalyst layer, which is the main reason of the low performance and its degradation. The delamination is due probably to the different nature of HC membrane to the Nafion ionomer. A substitutional method, therefore, is suggested to overcome this. In such a way, the outer ionomer process is removed and the low transfer rate of catalyst by skipping the ionomer process is compensated with optimization of other process variables such as transfer time or temperature. The resulting performance is superior to the original LTD method, which can be explained in terms of low resistive components both in ohmic and kinetic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.29-34
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• 2008

In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.12
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• pp.1022-1030
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• 2009

Numerical analysis was carried out to investigate the effect of GDL (Gas diffusion layer) porosity on the performance of PEMFC (proton exchange membrane fuel cell). A complete three-dimensional model was chosen for single straight channel geometry including cooling channel. Main emphasis is placed on the heat and mass transfer through the GDL with different porosity. The present numerical results show that at high current densities, the cell voltage is influenced by the GDL porosity while the cell performance is nearly the same at low current densities. At high current densities, low value of GDL porosity results in decrease of the fuel cell performance since the diffusion of reactant gas through GDL becomes slow with decreasing porosity. On the other hand, for high GDL porosity, the effective thermal conductivity becomes low and the heat generated in the cell is not removed rapidly. This causes the temperature of fuel cell to increase and gives rise to dehydration of the membrane, and ultimately increase of the ohmic loss.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• Journal of Integrative Natural Science
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• v.4 no.4
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• pp.294-297
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• 2011

Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.