• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.73-77
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• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.127-134
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• 2011

We investigate the crystallographic orientation and strain states of the Ni/Ag ohmic contacts on p-type GaN. The Ag film in the Ni/Ag contact was severely agglomerated during high temperature annealing in air ambient. As a results, after annealing for 24 h, the Ni/Ag contact shows non-linear I-V curve and low light reflectance of ~21% at 460 nm wavelength. High-resolution X-ray diffraction results show that the interplanar spacing of Ag (111) planes is almost same to that of bilk Ag after annealing for 24 hrs, indicating that the in-plane tensile strain in the Ag film was fully relaxed due to the Ag agglomeration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and N$_2$ gas ambient annealing method at 950$^{\circ}C$ for 10 min. The specific contact resistivity($\rho$$\sub$c/), sheet resistance(R$\sub$S/), contact resistance(R$\sub$S/), transfer length(LT) were calculated from resistance(R$\sub$T/) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho$$\sub$c/=3.8x10$\^$-5/ Ω$\textrm{cm}^2$ , R$\sub$c/=4.9Ω, R$\sub$T/=9.8Ω and L$\sub$T/=15.5$\mu\textrm{m}$, resulting average values of another sample were $\rho$$\sub$c/=2.29x10$\^$-4/ Ω$\textrm{cm}^2$ , R$\sub$c/=12.9Ω, R$\sub$T/=25.8Ω. The Physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.772-777
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• 2018

This paper used RF Magnetron Sputtering to deposition n-type and p-type to ITO glass. The N-type ohmic contact worked well under all conditions. Sheet resistance has been shown to increase sheet resistance as RF Power increases. After analyzing the surface of the deposited thin film, in the condition that RF Power was 250W and substrate temperature was $250^{\circ}C$, particles were measured to have a uniform and consistent thin film. P-type has good ohmic contact under all conditions and sheet resistance has been shown to increase as RF Power increases. As the RF Power grew, thickness increased and stabilized. PN junction thin film and NP junction thin film showed increased thickness and stabilized as sputtering time increased. As a result of thin film, conversion efficiency was at 0.2 when sputtering time was 10 minutes.

• Applied Chemistry for Engineering
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• v.32 no.1
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• pp.68-74
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• 2021

Gas diffusion layer (GDL) compression is important parameter of polymer electrolyte membrane fuel cell (PEMFC) performance to have an effect on contact resistance, reactants transfer to electrode, water content in membrane and electrode assembly (MEA). In this study, the effect of GDL compression on fuel cell performance was investigated for commercial products, JNT20-A3. Polarization curve and electrochemical impedance spectroscopy was performed at different relative humidity and compression ratio using electrode area of 25 ㎠ unit cell. The contact resistance was reduced to 8, 30 mΩ·㎠ and membrane hydration was increased as GDL compression increase from 18.6% to 38.1% at relative humidity of 100 and 25%, respectively. It was identified through ohmic resistance change at relative humidity conditions that as GDL compression increased, water back-diffusion from cathode and electrolyte membrane hydration was increased because GDL porosity was decreased.

• Clean Technology
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• v.16 no.4
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• pp.297-303
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• 2010

Effect of interconnect structure on the cell performance in anode-supported tubular solid oxide fuel cell (SOFC) has been investigated in this study, employing the Fluent CFD solver. For the robust and reliable theoretical analysis corroborating experimental results, it is of great importance to elucidate the role of interconnect which is electrically connected with electrodes on the cell characteristics. From the fact that the thin interconnect provides the enhanced cell performance, it is revealed that the interconnect thickness is a key parameter that is able to effectively control the ohmic resistance. Under the constant thickness condition, the cell performance does not considerably change with the variation of interconnect width. This is because the current passage along with circumferential direction is not effectively altered by the change of interconnect width in tubular SOFC system.

• Korean Journal of Food Science and Technology
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• v.37 no.3
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• pp.438-442
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• 2005

Granule swelling is essential phenomenon of starch gelatinization in excess water, and characteristic of heated starch dispersion depends largely on size and distribution of swelled starch granule. Although swelling characteristic of starch granules depends on type of starch, heating rate, and moisture content, influence of heating rate on swelling phenomenon of starch granule has not been fully discussed, because constant heating rate of starch dispersion cannot be obtained by conventional heating method. Ohmic heating, electric-resistant heat generation method, applies alternative current to food materials, through which heating rate can be easily controlled precisely and conveniently at wide range of constant heating rates. Starch dispersion heated at low heating rates below $7.5^{\circ}C/min$ showed Newtonian fluid behavior, whereas showed pseudoplastic behavior at heating rates above $16.4^{\circ}C/min$. Apparent viscosity of starch dispersion increased linearly with increasing heating rate, and yield stress was dramatically increased at heating rates above $16.4^{\circ}C/min$. Average diameter of corn starch granules during ohmic heating was dramatically increased from $30.97\;to\;37.88\;{\mu}m$ by increasing heating rate from $0.6\;to\;16.4^{\circ}C/min$ (raw corn starch: $13.7\;{\mu}m$). Hardness of starch gel prepared with 15% corn starch dispersion after heating to $90^{\circ}C$ at different heating rates decreased gradually with increasing heating rate, then showed nearly constant value from $9.4\;to\;23.2^{\circ}C/min$. Hardness increased with increase of heating rate higher than $23.2^{\circ}C/min$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.79-79
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• 1999