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A Study of Thin Film deposition using of RF Magnetron Sputtering

RF 마그네트론 스퍼터링을 이용한 박막 증착에 관한 연구

  • Lee, Woo Sik (Department of Chemical & Biological Engineering, Gachon University)
  • Received : 2018.10.31
  • Accepted : 2018.12.10
  • Published : 2018.12.29

Abstract

This paper used RF Magnetron Sputtering to deposition n-type and p-type to ITO glass. The N-type ohmic contact worked well under all conditions. Sheet resistance has been shown to increase sheet resistance as RF Power increases. After analyzing the surface of the deposited thin film, in the condition that RF Power was 250W and substrate temperature was $250^{\circ}C$, particles were measured to have a uniform and consistent thin film. P-type has good ohmic contact under all conditions and sheet resistance has been shown to increase as RF Power increases. As the RF Power grew, thickness increased and stabilized. PN junction thin film and NP junction thin film showed increased thickness and stabilized as sputtering time increased. As a result of thin film, conversion efficiency was at 0.2 when sputtering time was 10 minutes.

본 논문은 RF 마크네트론 스퍼터링 장비를 이용하여 ITO 유리에 N-type 및 P-type을 증착하였다. N-Type의 오믹접촉은 모든 조건에서 잘 되었다. 면저항은 RF Power가 증가할수록 면 저항이 증가되는 현상을 나타내었다. 증착한 박막의 표면을 분석해 본 결과, RF Power가 250W이고, 기판온도가 $250^{\circ}C$의 조건에서 입자가 균일하고 크기가 일정한 박막이 증착 된 것으로 측정되었다. P-Type은 모든 조건에서 오믹접촉이 잘 이루어졌으며 면저항은 RF Power가 증가할수록 증가되는 것으로 나타내었다. RF Power가 증가할수록 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막과 NP junction 박막은 스퍼터링 시간이 증가할수록 박막의 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막을 제작한 결과, 변환효율은 스퍼터링 시간이 10분일 때 0.2로 가장 우수하였다.

Keywords

JBJTBH_2018_v11n6_772_f0001.png 이미지

그림 1. 전류-전압 특성 Fig. 1 Characteristics of I-V

JBJTBH_2018_v11n6_772_f0002.png 이미지

그림 2. 면저항 특성 Fig. 2. Characteristics of sheet resistance

JBJTBH_2018_v11n6_772_f0003.png 이미지

그림 3. N-type 박막의 SEM 사진 Fig. 3. SEM photographs of N-type thin film

JBJTBH_2018_v11n6_772_f0004.png 이미지

그림 4 전류-전압 특성 Fig. 4. Characteristics of I-V

JBJTBH_2018_v11n6_772_f0005.png 이미지

그림 5. 면저항 특성 Fig. 5. Characteristics of sheet resistance

JBJTBH_2018_v11n6_772_f0006.png 이미지

그림 6. P-Type 박막의 SEM 사진 Fig. 6. SEM photographs of P-type thin film

JBJTBH_2018_v11n6_772_f0007.png 이미지

그림 7. PN 접합의 전류-전압 Fig. 7. I-V of PN junction

JBJTBH_2018_v11n6_772_f0008.png 이미지

그림 8. PN 접합의 SEM 사진 Fig. 8. SEM photograph of PN junction

JBJTBH_2018_v11n6_772_f0009.png 이미지

그림 9. NP 접합의 전류-전압 Fig. 9. I-V of NP junction

JBJTBH_2018_v11n6_772_f0010.png 이미지

그림 10. NP junction SEM 사진 Fig. 10. SEM photograph of NP junction

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