• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.32-39
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• 2010

Hydrogen is sustainable energy without environment pollution. In this study, experiments and analysis of hydrogen generation from gases methanol and ethanol using cylindrical barrier discharge reactor was carried out. The discharge reactor to generate hydrogen molecules used in this work is one type of Non-thermal Plasma (NTP) reactors and neon-transformer as power source to make a plasma was used. Hydrogen concentrations were measured as parameters of applied voltage, concentrations of methanol and ethanol, and flow rates of carrier gases($N_2$). Hydrogen generation increased according to applied voltage and produced largely in case of methanol compared with ethanol. It is thought that the reason is deeply related with those different chemical structures. Energy yield of hydrogen generation in case of ethanol decreases according to increasing applied voltage, but that in case of methanol has a peak at applied voltage of 22[kV] and decreased. Specifically, hydrogen generation increased with increasing applied voltage, but low voltage was better, which is the best parameter in the aspects of energy efficiency.

• Journal of the Korean Institute of Gas
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• v.9 no.2 s.27
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• pp.50-55
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• 2005

The compositional and structural properties of alkali metal ion exchanged Y-zeolites have been investigated by la number of analytical techniques and their catalytic activities were tested for NOx reduction in combination with a non-thermal plasma. The NOx conversion data for LiY, NaY, KY and CsY were measured by chemiluminiscent NOx meter in the temperature range of 100 to $350^{\circ}C$. The initial activities of the catalyst at $150^{\circ}C$ increased in the order LiY < KY < NaY < CsY in alkali series. The activity of CsY and NaY were increased and showed maximum at $200^{\circ}C$ and then decreased in the plasma reactor, as the temperature increased. The activity of KY maintained same by $200^{\circ}C$ and then decreased, whereas the activity of LiY decreased with the increasing temperature. The CsY catalyst, which showed the highest activity in alkali metal series, exhibits a NOx conversion efficiency of $80\%$ between $170{\~}220^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.5 s.182
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• pp.190-196
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• 2006

Transparent materials are widely used in the fields of optic parts and bio industry. We have experiment to find out the characteristics of the micromachining inside transparent materials using femtosecond laser pulses. With its non-linear effects by very high peak intensity, filament (plasma channel) was formed by the cause of the self-focusing and the self-defocusing. Physical damage could be found when the intensity is high enough to give rise to the thermal stress or evaporation. At the vicinity of the power which makes the visible damage or modification, the structural modification occurs with the slow scanning speed. According to the polarization direction to the scanning direction, the filament quality is quite different. There is a good quality when the polarization direction is parallel to the scanning direction. For fine filament, we could suggest the conditions of the high numerical aperture lens, the short shift of focusing point, the low scanning speed and the low power below 20 mW. As the examples of optics parts, we fabricated the fresnel zone plate with the $225{\mu}m$ diameter and Y-bend optical wave guide with the $5{\mu}m$ width.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2182-2185
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• 1999

In this experimental study we propose the double dielectric barrier discharge(DDBD) reactor to produce as high an electric field as possible. DDBD reactor is designed to remove $NO_x$ at atmospheric pressures from the moving pollution source such as diesel automobile DDBD reactor consisted of two cylinder glass tubes arranged so that the gas flow was directed between the two tubes. Inside of the inner tube was filled with small metal beads and outside of the inner tube was wounded with stainless wire to form the electrode. The outer tube was surrounded by an aluminum foil In this reactor there are three electrodes, i.e. metal bead(C), helical wire(I) and aluminum foil(0). By using DDBD reactor we will report some interesting results of treatment of the gas which is the dilute mixtures of NO in N2. And then we compared thee results with the results of cylinder-wire(CW) which is one of popularly used reactor in non-thermal plasma applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.21-26
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• 2021

Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.405-422
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• 2013

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses $H_2O$ and $O_3$ as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

• Advances in aircraft and spacecraft science
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• v.4 no.6
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• pp.729-744
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• 2017

This investigation highlights rationale of electrically conductive nano adhesives for its essential application for Electromagnetic Interference (EMI) Shielding in satellites and Lightning Strike Protection in aircrafts. Carbon Nano Fibres (CNF) were functionalized by electroless process using Tollen's reagent and by Plasma Enhanced Chemical Vapour Deposition (PECVD) process by depositing silver on CNF. Different weight percentage of CNF and silver coated CNF were reinforced into the epoxy resin hardener system. Scanning Electron Microscopy (SEM) micrographs clearly show the presence of CNF in the epoxy matrix, thus giving enough evidence to show that dispersion is uniform. Transmission Electron Microscopy (TEM) studies reveal that there is uniform deposition of silver on CNF resulting in significant improvement in interfacial adhesion with epoxy matrix. There is a considerable increase in thermal stability of the conductive nano adhesive demonstrated by Differential Scanning Calorimetry (DSC) and Thermogravimetric Analysis (TGA). Four probe conductivity meters clearly shows a substantial increase in the electrical conductivity of silver coated CNF-epoxy composite compared to non-coated CNF-epoxy composite. Tensile test results clearly show that there is a significant increase in the tensile strength of silver coated CNF-composites compared to non-coated CNF-epoxy composites. Consequently, this technology is highly desirable for satellites and EMI Shielding and will open a new dimension in space research.

• Korean Journal of Food Science and Technology
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• v.47 no.4
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• pp.486-491
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• 2015

The potential of applying cold plasma (CP) treatments to improve microbiological safety of powdered products has been investigated using infant milk powder (IMP) and onion powder (OP). Among the different kinds of CP-forming gases, He-$O_2$ (99.8:0.2) gas mixture and He gas were most effective in reducing the number of Cronobacter sakazakii in IMP and Bacillus cereus spores in OP, respectively. C. sakazakii counts in IMP decreased by $0.9{\pm}0.1{\log}\;CFU/g$ after CP treatment, and the extent of C. sakazakii inhibition increased in a time-dependent manner. CP treatment at 900 W for 20 min reduced the number of B. cereus spores by ~0.4 log spores/g. Treatments that integrated CP with microwave (MW-CP treatment) as well as those that integrated CP with heat and microwave (H-MW-CP treatment) resulted in a 90% reduction in the number of spores in OP. Thus, CP treatments demonstrated potential for decontaminating foodborne pathogens from powdered products, in combination with heat for improved effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios