• 제목/요약/키워드: no current stress

검색결과 244건 처리시간 0.037초

Direct Current (DC) Bias Stress Characteristics of a Bottom-Gate Thin-Film Transistor with an Amorphous/Microcrystalline Si Double Layer

  • Jeong, Tae-Hoon;Kim, Si-Joon;Kim, Hyun-Jae
    • Transactions on Electrical and Electronic Materials
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    • 제12권5호
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    • pp.197-199
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    • 2011
  • In this paper, the bottom-gate thin-film transistors (TFTs) were fabricated with an amorphous/microcrystalline Si double layer (DL) as an active layer and the variations of the electrical characteristics were investigated according to the DC bias stresses. Since the fabrication process of DL TFTs was identical to that of the conventional amorphous Si (a-Si) TFTs, it creates no additional manufacturing cost. Moreover, the amorphous/microcrystalline Si DL could possibly improve stability and mass production efficiency. Although the field effect mobility of the typical DL TFTs is similar to that of a-Si TFTs, the DL TFTs had a higher reliability with respect to the direct current (DC) bias stresses.

열적으로 질화, 재산화된 모스 소자의 온도특성 (Temperature Characteristics of Thermally Nitrided, Reoxidized MOS devices)

  • 이정석;장창덕;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1998년도 추계종합학술대회
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    • pp.165-168
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    • 1998
  • Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

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Al-황동의 분극특성에 미치는 응력의 영향 (Effect of Stress on the Polarization Characteristic of Al-brass)

  • 임우조;정해규;심경태
    • 한국안전학회지
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    • 제19권2호
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    • pp.1-5
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    • 2004
  • Al-brass is the raw material of mnufacturing tubes for heat exchanger of vessel where seawater is used to coolant because it has high level of heat coductivity and excellent mechanical properties and high level of corrosion resistance due to cuprous oxide($Cu_2O$) layer against seawater. However, damage of Al-brass tubes for heat exchanger of vessel is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment. In this study, to investigate on the effect of stress on the polarization characteristics of Al-brass. At the stress of 0% and 95% yield strength by constant displacement tester, in 3.5% NaCl + 0.1% $NH_4OH$ solution, the polarization tests were carried out. And thus open circuit potential, corrosion current density, anodic polarization, cyclic polarization and dezincification behavior of Al-brass are investigated.

The Effect of Transcranial Direct Current Stimulation on Smartphone Addiction and Stress: a randomized controlled study

  • Lee, Eunsang
    • Physical Therapy Rehabilitation Science
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    • 제10권1호
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    • pp.76-81
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    • 2021
  • Objective: Smartphone addiction can cause forward head posture, carpal tunnel syndrome and depression, and anxiety. Various interventions have been proposed to resolve Smartphone addiction. However, research regarding the efficacy of these interventions remains lacking. This study was conducted to investigate the effect of tDCS (Transcranial Direct Current Stimulation) on smartphone addiction solution and stress reduction. Design: A randomized controlled trial. Methods: The participants were divided randomly into two group (tDCS vs. Control). tDCS was applied to 41 adults (22.95±2.76 years). The tDCS group was applied 2 mA, for 13 minutes twice over a 26 minute period (n1 = 21). The control (n2 = 20) was not applied after padding and was applied twice for 13 minutes over a 26 minute period. This study was conducted four times a week for a total of four weeks. Results: Smartphone addiction for tDCS showed significant improvement in the results in the S-score (p<0.05, 95% CI: 0.702, 4.922), and the result of heart rate (HR) and skin conductivity (SC) to stress. The tDCS group and control group showed no significant decrese in the results in the HR (p>0.05, 95% CI: -3.390, 8.332), but tDCS group showed significant decrese in the results in the SC (p<0.05, 95% CI: 0.060, 1.343) Conclusions: This study suggected that smartphone addiction treatment and decreses of stress. The use of tDCS will reduce the addiction rate of adults and reduce stress, so that possible side effects in society can be solved.

양극산화된 5083-H321 합금의 천연해수 내 전기화학적 부식 및 응력부식균열 특성에 관한 연구 (Investigation on Electrochemical Corrosion and Stress Corrosion Cracking Characteristics of Anodized 5083-H321 Alloy in Natural Seawater)

  • 황현규;신동호;정광후;김성종
    • Corrosion Science and Technology
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    • 제19권5호
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    • pp.259-264
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    • 2020
  • Many studies have been conducted to improve the corrosion resistance and durability of various aluminum alloys through the anodizing technique. It is already used as a unique technique for enhancing the properties of aluminum alloys in various industries. This paper investigated the electrochemical corrosion and stress corrosion cracking characteristics of anodized aluminum 5083-H321 alloy in natural seawater. The corrosion characteristics were assessed by the electrochemical technique and potentiodynamic polarization test. The stress corrosion cracking characteristic was evaluated with a slow strain rate tensile test under 0.005 mm/min rate, which showed that the hard anodizing film had a thickness of about 16.8 ㎛. Although no significant characteristics of stress corrosion cracking were observed in the slow strain rate test, the anodized specimen presented excellent corrosion resistance. The corrosion current density was measured to be approximately 4.2 times lower than that of the base material, and no surface damage was observed in the anodic polarization test.

조종석 각도변화가 양성 가속도에 미치는 영향에 관한 연구 (The effects of high sustained +Gz under different seat back angles)

  • 이창민;박세권
    • 대한인간공학회지
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    • 제15권1호
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    • pp.69-78
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    • 1996
  • Current fighter pilots, flying new generation aircrafts with high performance, are under severe stress during aerial combat maneuvering when they are exposed to high sustained +Gz(Head-to-foot) acceleration stress. Two major factor limiting performance during high sustaied +Gz acceleration stress are loss of vision-greyout or blackout, and loss of consciousness (LOC). These symptoms are believed to occur as a result of insuff- icient blood flow to the retina and the brain. This study was conducted to evaluate the effects of high sustained +Gz stress under different seat back angle. The results. obtained by the biodvanmic computer simulations using the ATB(articulated total body) model, are represented with respect to three variables, such as HIC(head injury criterion) value, average G, and maximum G. The results demonstrate that the seat back angle(over $30^{\circ}C$) had a significant effect to decrease +Gz stress on the head segment and had no significant effect on HIC.

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High Efficiency and Low Device Stress Voltage and Current Clamping ZVS PWM Asymmetrical Half Bridge Converter

  • Han Sang Kyoo;Moon Gun-Woo;Youn Myung Joong
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2004년도 전력전자학술대회 논문집(1)
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    • pp.341-345
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    • 2004
  • A high efficiency and low device stress voltage and current clamping BVS PWM asymmetrical half bridge converter is proposed in this paper. To achieve the ZVS of power switches along the wide load range, the transformer leakage inductor $L_{Ikg}$ is increased. Then, to solve the problem related to ringing in the secondary rectifier caused by the resonance between $L_{Ikg}$ and rectifier junction capacitors, the proposed converter employs a voltage and current clamping cell, which helps voltages and currents of rectifier diodes to be clamped at the output voltage and output current, respectively. Therefore, no RC-snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. In addition, since all energy stored in $L_{Ikg}$ is transferred to the output side, the circulating energy problem can be effectively solved and duty loss does net exist. The operational principle, theoretical analysis, and design considerations are presented. To confirm the operation, validity, and features of the proposed circuit, experimental results from a 425W, 385-170Vdc prototype are presented.

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Novel Zero-Current-Switching (BCS) PWM Switch Cell Minimizing Additional Conduction Loss

  • Park, Hang-Seok;Cho, B.H.
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제12B권1호
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    • pp.37-43
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    • 2002
  • This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5㎾ prototype boost converter operating at 40KHz.

Lossless Snubber with Minimum Voltage Stress for Continuous Current Mode Tapped-Inductor Boost Converters for High Step-up Applications

  • Kang, Jeong-Il;Han, Sang-Kyoo;Han, Jonghee
    • Journal of Power Electronics
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    • 제14권4호
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    • pp.621-631
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    • 2014
  • To invigorate the tapped-inductor boost (TIB) topology in emerging high step-up applications for off-grid products, a lossless snubber consisting of two capacitors and three diodes is proposed. Since the switch voltage stress is minimized in the proposed circuit, it is allowed to use a device with a lower cost, higher efficiency, and higher availability. Moreover, since the leakage inductance is fully utilized, no effort to minimize it is required. This allows for a highly productive and cost-effective design of the tapped-inductor. The proposed circuit also shows a high step-up ratio and provides relaxation of the switching loss and diode reverse-recovery. In this paper, the operation is analyzed in detail, the steady-state equation is derived, and the design considerations are discussed. Some experimental results are provided to confirm the validity of the proposed circuit.

유한요소해석을 이용한 현장 덧씌우기 콘크리트의 부착강도 평가 방법 제안 (Proposal of Bond Strength Evaluation Method for Overlay Concrete at Field)

  • 이봉학;홍창우;이주형;김성환
    • 산업기술연구
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    • 제21권B호
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    • pp.295-300
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    • 2001
  • Significant improvements in bond strength between new and existing concrete can be achieved through the modification of the new concrete by latex modification. But, no test method has been adopted as a standard to measure the bond strength between the concrete used to repair and the substrate being repaired. The performance of old and the new concrete construction defends upon band strength between old and the new concrete. Current adhesion strength measurement method is inaccurate method that ignore effect of stress concentration by shape of specimens. Therefore, this research calculates stress concentration coefficient using finite element analysis and direction tensile strength test (pull-off test). The result shows that the required core depth is 2.5 cm. Elastic modulus and overlay thickness do not influence in stress concentration.

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