• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.223-224
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• 2008

Important element are low cost, high-efficiency crystalline silicon solar cells. in this paper, Will be able to contribute in low cost, high-efficiency silicon solar cells, Applies oxide/nitride passivation, produced screen-printed solar cells. and the Measures efficiency, and evaluated a justice quality oxide/nitride passivation screen-printed solar cells.

• Transactions on Electrical and Electronic Materials
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• 제2권3호
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• pp.1-6
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• 2001

A simulation method is proposed to study the amorphous structure of carbon nitride. The material properties of a non-uniform nitrogen distribution in an amorphous CN matrix can be studied. The cohesive energy of a group of randomly generated atoms can be minimized to find the relative positions of atoms. From the calculated configuration of atoms, many properties of amorphous carbon nitride can be calculated such as bulk modulus, P-V curve, sp$^3$/sp$^2$ ratio of carbon, and vibrational spectra. The calculation shows that the cohesive energy of non-uniform nitrogen distribution is lower than that of a uniform distribution. This may suggest that the regular structure of carbon nitride can at most be metastable. It is not easy to incorporate nitrogen atoms into a carbon matrix.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1620-1621
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• 2000

본 실험에서는 PMD Liner Nitride 공정의 최적화의 일환으로 현재 반도체 제조 공정에서 적용하고 있는 Nitride막들의 특성을 비교 분석함과 더불어 연관 공정인 BPSG 증착 및 Densification과의 관련 여부를 파악하기 위한 시도를 하였다. 특히 Nitride 박막 특성을 결정하는 중요한 요소인 Si-H 결합과 Si-NH-Si 결합의 농도 변화 분석을 위하여 FTIR Area 분석법을 이용하였다. 또한 증착된 Film의 안정성 여부를 판단하기 위하여 발생 가능한 정도의 RF Power 흔들림에 대한 Nitride 막의 Stress 변화 정도를 측정하였다.

• 한국표면공학회지
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• 제29권5호
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• pp.363-370
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• 1996

Carbon nitride is one of the new carbon materials which show interesting properties. After the theoretical calculation by LIu and Cohen, many researchers are trying to prepare $\beta$-$C_3N_4$ which may be harder than diamond. Many carbon nitride films synthesized till now by various methods are amorphous and the N/C ratios in the films are usually below 0.5. First we review shortly the synthesis of carbon nitride thin films by plasma, ion and laser processing. Second we report on the preparation of amorphous carbon nitride thin films by shielded arc ion plating and the structural and mechanical properties of the films.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.268-269
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• 2006

Preparation processing of sintered silicon nitride ceramics was emphatically investigated with Self-Propagating High-Temperature Synthesis (SHS) of silicon nitride prepared by ourselves as raw material. The results indicate that good sinter ability can be obtained with cheaply SHS of silicon nitride preparing silicon nitride materials. The cost of silicon nitride materials will be lowered.

• Corrosion Science and Technology
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• 제21권1호
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• pp.41-52
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• 2022

Herein, we report polyvinyl butyral composites coatings containing various loadings of 72-h bath sonicated hexagonal boron nitride particles (5 ㎛) to enhance barrier properties of coatings. Barrier properties of coatings were determined in 3.5 wt% NaCl after different time periods of immersion via electrochemical techniques such as open circuit potential, electrochemical impedance spectroscopy, and potentiodynamic polarization test. Coatings containing sonicated hexagonal boron particles exhibited improved corrosion resistance for longer periods of immersion compared to neat coating. We also discussed effects of hexagonal boron nitride on healing properties of polyvinyl butyral. Coatings containing 1.0 wt% loading of sonicated hexagonal boron nitride showed improved long-term barrier properties than coatings with other compositions. The presence of hexagonal boron nitride also affected the healing properties of polyvinyl butyral coatings besides their barrier properties. Such improved barrier properties of composites coatings were attributed to the high aspect ratio, plate-like shape, and electrically insulated nature of the filler.

• 한국세라믹학회지
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• 제49권4호
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• pp.301-307
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• 2012

SiAlON glasses are silicates or alumino-silicates, containing Mg, Ca, Y or rare earth (RE) ions as modifiers, in which nitrogen atoms substitute for oxygen atoms in the glass network. These glasses are found as intergranular films and at triple point junctions in silicon nitride ceramics and these grain boundary phases affect their fracture behaviour. This paper provides an overview of the preparation of M-SiAlON glasses and outlines the effects of composition on properties. As nitrogen substitutes for oxygen in SiAlON glasses, increases are observed in glass transition temperatures, viscosities, elastic moduli and microhardness. These property changes are compared with known effects of grain boundary glass chemistry in silicon nitride ceramics. Oxide sintering additives provide conditions for liquid phase sintering, reacting with surface silica on the $Si_3N_4$ particles and some of the nitride to form SiAlON liquid phases which on cooling remain as intergranular glasses. Thermal expansion mismatch between the grain boundary glass and the silicon nitride causes residual stresses in the material which can be determined from bulk SiAlON glass properties. The tensile residual stresses in the glass phase increase with increasing Y:Al ratio and this correlates with increasing fracture toughness as a result of easier debonding at the glass/${\beta}-Si_3N_4$ interface.

• 한국세라믹학회지
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• 제49권4호
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• pp.380-384
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• 2012

This paper deals with the recent developments of high thermal conductivity silicon nitride ceramics. First, the factors that reduce the thermal conductivity of silicon nitride are clarified and the potential approaches to realize high thermal conductivity are described. Then, the recent achievements on the silicon nitride fabricated through the reaction bonding and post sintering technique are presented. Because of a smaller amount of impurity oxygen, the obtained thermal conductivity is substantially higher, compared to that of the conventional gas-pressure sintered silicon nitride, while the microstructures and bending strengths are similar to each other between these two samples. Moreover, further improvement of the thermal conductivity is possible by increasing ${\beta}/{\alpha}$ phase ratio of the nitrided sample, resulting in a very high thermal conductivity of 177 W/($m{\cdot}K$) as well as a high fracture toughness of 11.2 $MPa{\cdot}m^{1/2}$.

• ETRI Journal
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• 제34권6호
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• pp.962-965
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• 2012

In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer ($SiO_2$) of a conventional device is replaced by a multilayered insulator ($SiO_2/SiN_x/TEOS$) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and $1.1m{\Omega}cm^2$, respectively.

• 한국재료학회지
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• 제30권6호
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• pp.279-284
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• 2020

In this work, a carbon-doped carbon nitride photocatalyst is successfully synthesized through a simple centrifugal spinning method after heat treatment. The morphology and properties of the prepared photo catalyst are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectrophotometer (UV-vis), and specific surface area. The results show that the band gap of the prepared sample, g-CN-10 is 2.1 eV, is significantly lower than that of pure carbon nitride, 2.7 eV. As the amount of cotton candy increased, the absorption capacity of the prepared catalyst for visible light is significantly enhanced. In addition, the degradation efficiency of Rhodamine B (RhB) by sample g-CN-10 is 98.8 % over 2 h, which is twice that value of pure carbon nitride. The enhancement of photocatalytic ability is attributed to the increase of specific surface area after the carbon doping modifies carbon nitride. A possible photocatalytic degradation mechanism of carbon-doped carbon nitride is also suggested.