• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.64-65
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• 2005

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제22권4호
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• pp.14-19
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• 2020

Here we present the comparative experimental study of the stability of the superconducting state in 4 mm YBCO tapes with copper lamination against local heat disturbances at 77 K. The samples are either directly cooled by immersing a bare YBCO tape into a liquid nitrogen pool or operate in nearly-adiabatic conditions when the tape is covered by a 0.6 mm layer of Kapton insulation. Main quench characteristics, i.e. minimum quench energies (MQEs) and normal zone propagation (NZP) velocities for both samples are measured and compared. Minimum NZP currents are determined by a low ohmic resistor technique eligible for obtaining V - I curves with a negative differential resistance. The region of transport currents satisfying the stationary stability criterion is found for the different cooling conditions. Finally, we use the critical temperature margin as a universal scaling parameter to compare the MQEs obtained in this work for YBCO tapes at 77 K with those taken from literature for low-temperature superconductors in vacuum at 4.2 K, as well as for MgB2 wires cooled with a cryocooler down to 20 K.

• 전력전자학회논문지
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• 제27권2호
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• pp.85-91
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• 2022

This study proposes a high efficiency bridgeless Power Factor Correction (PFC) converter with improved common mode noise characteristics. Conventional PFC has limitations due to low efficiency and enlarged heat sink from considerable conduction loss of bridge diode. By applying a Common Mode (CM) coupled inductor, the proposed bridgeless PFC converter generates less conduction loss as only a small magnetizing current of the CM coupled inductor flows through the input diode, thereby reducing or removing heat sink. The input diode is alternately conducted every half cycle of 60 Hz AC input voltage while a negative node of AC input voltage is always connected to the ground, thus improving common mode noise characteristics. With the aim to improve switching loss and reverse recovery of output diode, the proposed circuit employs Critical Conduction Mode (CrM) operation and it features a simple Zero Current Detection (ZCD) circuit for the CrM. In addition, the input current sensing is possible with the shunt resistor instead of the expensive current sensor. Experimental results through 480 W prototype are presented to verify the validity of the proposed circuit.

• 한국산학기술학회논문지
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• 제21권4호
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• pp.39-48
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• 2020

2017년 8월에 발생한 고창 전력시험센터를 시작으로, 현재까지 총 29건의 전기저장장치 화재가 발생하여 많은 재산피해가 보고되고 있다. 이에 대한 원인은 아직 정확하게 규명되지 않았으나, ESS(energy storage system)와 전력변환장치뿐만 아니라, 계통측 불평형 문제도 하나의 원인으로 고려되어야 할 것으로 보인다. 특히, 연계용변압기측의 순환전류가 자화전류에 영향을 미쳐, 의도치 않게 변압기의 철심이 포화되고 서지전압이 발생하여 ESS에 영향을 줄 수 있다. 따라서, 본 논문에서는 부하불평형에 의한 불평형전류 발생시, ESS 연계용변압기로 순환전류의 유입과 변압기 포화로 인한 서지전압 발생 현상을 해석하기 위하여, PSCAD/EMTDC를 이용한 배전용변전소, 연계용변압기 및 수용가부하로 구성된 배전계통의 모델링을 수행한다. 또한, 이러한 문제를 해결하기 위하여, 중성점 접지 저항기(neutral grounding resistor, NGR)를 통해 순환전류의 크기를 일정 값 이내로 저감시키는 방안을 제시하였다. 이를 바탕으로 시뮬레이션을 수행한 결과, 연계용변압기의 결선방식 및 철심구조에 따라 일정 값(10[A]) 이상의 순환전류가 발생하여, ESS에 전기적인 위해 요인이 될 수 있음을 알 수 있었고, 변압기 포화로 인해 2차측에 최대 3[pu]의 서지전압이 발생될 수 있음을 확인하였다.

• 전기학회논문지
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• 제62권7호
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• pp.943-949
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• 2013

Recently, an electric vehicle (EV) has been become a huge issue in the automotive industry. The EV has many electrical units: electric motors, batteries, converters, etc. The DC distribution power system (DPS) is essential for the EV. The DC DPS offers many advantages. However, multiple loads in the DC DPS may affect the severe instability on the DC bus voltage. Therefore, a voltage bus conditioner (VBC) may use the DC DPS. The VBC is used to mitigate the voltage transient on the bus. Thus, a suitable control technique should be selected for the VBC. In this research, Current controller with fixed switching frequency is designed and applied for the VBC. The DC DPS consist of both a resistor load and a boost converter load. The load variations cause the instability of the DC DPS. This instability is mitigated by the VBC. The simulation results by Matlab simulink and experimental results are presented for validating the proposed VBC and designed control technique.

• 전자공학회논문지 IE
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• 제46권1호
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• pp.16-22
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• 2009

펄스형 신경세포를 구현하기 위하여 호지킨-헉슬리 모델을 참조하여 $0.5{\mu}m$ CMOS 공정을 이용한 집적회로를 설계하고 칩 제작하였다. 펄스형 단위 신경세포는 취합기능을 갖는 입력단과 임계값이상에서 신호발생을 일으키는 펄스생성회로로 구성된다. 입력단을 입력전류신호를 취합하는 범프회로, 펄스생성회로는 몇 개의 트랜스콘덕터와 커패시터 전하공급기능을 갖는 부성저항회로로 이루어진다 SPICE 모의실험결과 임계신호전류 70 nA이상에서 펄스생성이 일어남을 확인하였고, 제작된 칩을 5V 조건하에서 측정하여 모의실험결과와 비교분석하였다.

• 전력전자학회논문지
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• 제26권5호
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• 대한금속재료학회지
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• 제47권9호
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• pp.591-596
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• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.40-45
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• 2015

Electrode systems: a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack in epoxy plate and a free particle (FP) were fabricated to simulate insulation defects in a gas insulated switchgear (GIS). $SF_6$ gas was filled in the electrode systems by 3 bar and/or 5 bar, respectively. Partial discharge (PD) pulses were detected through a $50{\Omega}$ non-inductive resistor. A calibration test was carried out according to IEC 60270, and the sensitivity was 0.25 pC/mV. PD pulses were distributed in the phase of $50^{\circ}{\sim}135^{\circ}$ and over 95% of them existed in the phase of $55^{\circ}{\sim}120^{\circ}$ for the POC. PD pulses were distributed in the phase of $230^{\circ}{\sim}310^{\circ}$ and over 90% of them existed in phase of $220^{\circ}{\sim}300^{\circ}$ for the POE. PD pulses occurred in the phase of $40^{\circ}{\sim}60^{\circ}$ and $220^{\circ}{\sim}300^{\circ}$ for the crack, and pulse counts were 25% higher in negative polarity than in positive polarity. PD pulses were distributed in every phase unlike to other three electrode systems and the peak magnitude was measured at $118^{\circ}$ and $260^{\circ}$ for the FP. As described above, PD pulses were observed in positive polarity for the POC, in negative one for the POE, in both one for the crack and the FP. In conclusion, it is expected that the identification rate of defect type can be improved by considering the polarity ratio of PD pulses on the PRPDA method.

• 한국정보통신학회논문지
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• 제13권7호
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• pp.1393-1398
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• 2009

본 연구는 LCD용 비정질 실리콘박막트랜지스터의 제조공정중 가장 중요한 식각 공정에서 각 박막의 특성에 맞는 습식 및 건식식각공정을 개발하여 소자의 특성을 안정시키고자 한다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층, 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si:H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si:H 층을 식각하고, 남아있는 NPR층을 제거 한다. 그 위 에 Cr층을 증착한 후 패터닝 하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 여기서 각 박막의 패터닝은 식각 공정으로 각단위 박막의 특성에 맞는 건식 및 습식식각 공정이 필요하다. 제조한 박막 트랜지스터에서 가장 흔히 발생되는 문제는 주로 식각 공정시 over 및 under etching 이며, 정확한 식각을 위하여 각 박막에 맞는 식각공정을 개발하여 소자의 최적 특성을 제공하고자한다. 이와 같이 공정에 보다 엄격한 기준의 건식 및 습식식각 공정 그리고 세척 등의 처리공정을 정밀하게 실시하여 소자의 특성을 확실히 개선 할 수 있었다.