• Title/Summary/Keyword: negative ion density

Search Result 58, Processing Time 0.031 seconds

Potential Profiles and Capacitances of an Ideally Polarizable Electrode/Hard Sphere Electrolyte System

  • Kim, Sang-Youl;Vedam, K.
    • Bulletin of the Korean Chemical Society
    • /
    • v.11 no.6
    • /
    • pp.487-493
    • /
    • 1990
  • A complete potential profile of an electrical double layer is calculated from a distribution function of charged particles based upon a model where the effect of a charged electrode and the finite size of ion are explicitly included. Electrons which are distributed on the electrode surface are assumed not to penetrate the electrode/electrolyte boundary. Formation of the constant density regions and their effects on potential and the electrical double layer capacitances are studied in great detail. The distribution of surface electrons as well as the constant density regions are found to be essential in characterizing the electrical double layer. The introduction of the ion size into the prior electrical double layer model of an ideally polarizable electrode/point charged electrolyte system, shows a great improvement in its characteristics mostly at negative potential region.

A Newly Developed Non-Cyanide Electroless Gold Plating Method Using Thiomalic Acid as a Complexing Agent and 2-Aminoethanethiol as a Reducing Agent

  • Han, Jae-Ho;Lee, Jae-Bong;Van Phuong, Nguyen;Kim, Dong-Hyun
    • Corrosion Science and Technology
    • /
    • v.21 no.2
    • /
    • pp.89-99
    • /
    • 2022
  • A versatile method for performing non-cyanide electroless gold plating using thiomalic acid (TMA) as a complexing agent and 2-aminoethanethiol (AET) as a reducing agent was investigated. It was found that TMA was an excellent complexing agent for gold. It can be used in electroless gold plating baths at a neutral pH with a high solution stability, makes it a potential candidate to replace conventional toxic cyanide complex. It was found that one gold atomic ion could bind to two TMA molecules to form the [2TMA-Au+] complex in a solution. AET can be used as a reducing agent in electroless gold plating solutions. The highest current density was obtained at electrode rotation rate of 250 to 500 rpm based on anodic and cathodic polarization curves with the mixed potential theory. Increasing AET concentration, pH, and temperature significantly increased the anodic polarization current density and shifted the plating potential toward a more negative value. The optimal gold ion concentration to obtain the highest current density was 0.01 M. The cathodic current was higher at a lower pH and a higher temperature. The current density was inversely proportional to TMA concentration.

Electrochemical Behavior Depending on Designed-Anode and Cathodes of Hybrid Supercapacitors (하이브리드 슈퍼커패시터의 음극 및 양극 설계에 따른 전기화학적 거동)

  • Shin, Seung-Il;Lee, Byung-Gwan;Ha, Min-Woo;An, Geon-Hyoung
    • Korean Journal of Materials Research
    • /
    • v.29 no.12
    • /
    • pp.774-780
    • /
    • 2019
  • The performance of Li-ion hybrid supercapacitors (asymmetric-type) depends on many factors such as the capacity ratio, material properties, cell designs and operating conditions. Among these, in consideration of balanced electrochemical reactions, the capacity ratio of the negative (anode) to positive (cathode) electrode is one of the most important factors to design the Li-ion hybrid supercapacitors for high energy storing performance. We assemble Li-ion hybrid supercapacitors using activated carbon (AC) as anode material, lithium manganese oxide as cathode material, and organic electrolyte (1 mol L-1 LiPF6 in acetonitrile). At this point, the thickness of the anode electrode is controlled at 160, 200, and 240 ㎛. Also, thickness of cathode electrode is fixed at 60 ㎛. Then, the effect of negative and positive electrode ratio on the electrochemical performance of AC/LiMn2O4 Li-ion hybrid supercapacitors is investigated, especially in the terms of capacity and cyclability at high current density. In this study, we demonstrate the relationship of capacity ratio between anode and cathode electrode, and the excellent electrochemical performance of AC/LiMn2O4 Li-ion hybrid supercapacitors. The remarkable capability of these materials proves that manipulation of the capacity ratio is a promising technology for high-performance Li-ion hybrid supercapacitors.

A finite Element Analysis on the discharge characteristics of $SF_6$ gas ($SF_6$ 가스 방전 특성의 유한요소해석)

  • 최승길;심재학;강형부
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.3
    • /
    • pp.265-272
    • /
    • 2000
  • In this paper the corona discharge in SF$_{6}$ gas used as insulating material in lots o high voltage equipment, is simulated by finite element method with Flux-Corrected Transport(FCT) method. By application of proposed method the negative corona discharge characteristics in needle to plane electrode is analyzed with time step. For the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as townsend first ionization and electron attachment. The calculated results show that the electric field intensity between anode and ion group is decreased as times go-by according to field distortion by those space charge. Accordingly the electron density is decreased strongly by the attatchment effect of SF6 gas so that the corona discharge becomes extinguished abruptly.y.

  • PDF

Non-gaseous Plasma Immersion Ion Implantation and Its Applications

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.151-151
    • /
    • 2012
  • A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

  • PDF

Strain-Relaxed SiGe Layer on Si Formed by PIII&D Technology

  • Han, Seung Hee;Kim, Kyunghun;Kim, Sung Min;Jang, Jinhyeok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.155.2-155.2
    • /
    • 2013
  • Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

  • PDF

Electrochemical Properties of Tin-Antimony Sulfide Nanocomposites Synthesized by Hydrothermal Method as Anode Materials for Sodium Ion Batteries (수열 합성법에 의해 제조된 주석-안티몬 황화물계 나노복합체 기반 나트륨이온전지용 음극의 전기화학적 특성)

  • So Hyeon Park;Su Hwan Jeong;Suyoon Eom;Sang Jun Lee;Joo-Hyung Kim
    • Korean Journal of Materials Research
    • /
    • v.32 no.12
    • /
    • pp.545-552
    • /
    • 2022
  • Tin-antimony sulfide nanocomposites were prepared via hydrothermal synthesis and a N2 reduction process for use as a negative electrode in a sodium ion battery. The electrochemical energy storage performance of the battery was analyzed according to the tin-antimony composition. The optimized sulfides exhibited superior charge/discharge capacity (770 mAh g-1 at a current density of 100 mA g-1) and stable lifespan characteristics (71.2 % after 200 cycles at a current density of 500 mA g-1). It exhibited a reversible characteristic, continuously participating in the charge-discharge process. The improved electrochemical energy storage performance and cycle stability was attributed to the small particle size, by controlling the composition of the tin-antimony sulfide. By optimizing the tin-antimony ratio during the synthesis process, it did not deviate from the solubility limit. Graphene oxide also acts to suppress volume expansion during reversible electrochemical reaction. Based on these results, tin-antimony sulfide is considered a promising anode material for a sodium ion battery used as a medium-to-large energy storage source.

A Polymer Interface for Varying Electron Transfer Rate with Electrochemically Formed Gold Nanoparticles from Spontaneously Incorporated Tetrachloroaurate(III) Ions

  • Song, Ji-Seon;Kang, Chan
    • Bulletin of the Korean Chemical Society
    • /
    • v.28 no.10
    • /
    • pp.1683-1688
    • /
    • 2007
  • This paper presents a novel simple method for introducing gold nanoparticles in a poly(4-vinylpyridine) (PVP) polymer layer over a glassy carbon (GC) electrode with the aim of forming a tunable electrochemical interface against a cationic ruthenium complex. Initially, AuCl4 ? ions were spontaneously incorporated into a polymer layer containing positively charged pyridine rings in an acidic media by ion exchange. A negative potential was then applied to electrochemically reduce the incorporated AuCl4 ? ions to gold nanoparticles, which was confirmed by the FE-SEM images. The PVP layer with an appropriate thickness over the electrode blocked electron transfer between the electrode and the solution phase for the redox reactions of the cationic Ru(NH3)6 2+ ions. However, the introduction of gold nanoparticles into the polymer layer recovered the electron transfer. In addition, the electron transfer rate between the two phases could be tuned by controlling the number density of gold nanoparticles.

Astudy of internal defects and their effects in $CaF_2$ single crystals (형석단결정의 내부결함 및 그 영향에 관한 연구)

  • Seo, Soo-Hyung;Joo, Kyoung;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.3
    • /
    • pp.419-423
    • /
    • 1998
  • The internal defects in $(CaF_2)$ single crystal were characterized by the observation of optical microscopy, the element analysis and the transmittance analysis. In bubble and negative crystal which are composed to crystal plane of (100) and (111), the spread negative crystal in $(CaF_2)$ crystal gave an effect of low transmittance. The precipitates formed in bubble as internal cavities were analyzed by using WDX. Violet colored-crystal had higher a dislocation density than non-colored crystal, and the atomic ratio between Ca and F changed by poor F ion. In this result, we could determine indirectly that violet color was occurred by poor F ion.

  • PDF

Preparation and Characterization of Sulfonated Poly (Arylene Ether Sulfone) Random Copolymer-Polyolefin Pore-filling Separators with Metal Ion Trap Capability for Li-ion Secondary Battery (리튬이온 이차전지용 금속이온 선택성 술폰화 폴리아릴렌에테르술폰 공중합체-폴리올레핀 함침격리막 제조 및 특성)

  • Jeong, Yeon Tae;Ahn, Juhee;Lee, Chang Hyun
    • Membrane Journal
    • /
    • v.26 no.4
    • /
    • pp.310-317
    • /
    • 2016
  • Lithium ion secondary battery (LISB) is an energy conversion system operated via charging-discharging cycle based on Lithium ion migration. LISB has a lot of advantages such as high energy density, low self-discharge rate, and a relatively high lifetime. Recently, increasing demands of electric vehicles have been encouraging the development of LISB with high capacity. Unfortunately, it causes some critical safety issues. It includes dendrite formation on negative electrode, resulting in electric shortage problems and battery explosion. Also, the elevated temperatures occurred during the LISB operation induces thermal shrinkage of polyolefin (e.g., polyethylene and polypropylene) separators. Consequently, the low thermal stability leads to decay of LISB performances and the reduction of lifetime. In this study, sulfonated poly (arylene ether sulfone) (SPAES) random copolymers were used as key materials to prepare polyolefin pore-filling separator. The resulting separators were evaluated in the term of metal ion chelation capability associated with dendrite formation, $Li^+$ ion conductivity and thermal durability.