• The KSFM Journal of Fluid Machinery
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• v.11 no.4
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• pp.14-21
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• 2008

The prediction for gaseous leak flows through a narrow crack is important for a leak-before-break (LBB) analysis. Therefore, the methodology to obtain the flow characteristics of gaseous leak flow in a narrow crack for the wide range by using the product of friction factor and Reynolds number correlations (fRe) for a micro-channel is developed and presented. The correlation applied here was proposed by the previous study. The fourth-order Runge-Kutta method was employed to integrate the nonlinear ordinary differential equation for the pressure and the regular-Falsi method was also employed to find the inlet Mach number. A narrow crack whose opening displacement ranges from 10 to $100{\mu}m$ with a crack length in the range from 2 to 200mm was chosen for sample prediction. The present results are compared with both numerical simulation results and available experimental measurements. The results are in excellent agreement with them. The leak flow rate can be approximately predicted by using proposed methodology.

• Proceedings of the Korean Nuclear Society Conference
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• 1999.10a
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• pp.150.1-150
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• 1999

• Journal of the Korean Society of Marine Environment & Safety
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• v.2 no.S1
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• pp.63-73
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• 1996

The assesment of the safety of ship's transit in a curved narrow channl consists of the maneuvering safety determined by the chance of running aground, the maneuvering difficulty determined by shop's workload, and shiphandler's subjective evaluation. In this study to examine the correlation between shiphandler's subjectice evaluation and the maneuvering risk, the real-time and full-mission shiphandling simulator in the Korean Marine Training & Research Institutes(KMTRI) was utilized. In the conning bridge of the shiphandling simulator, 50 experienced masters conducted masters conducted the modeled vessel of 60,000 deadweight tonnage along the designed channel under 3 different envrinmental conditions. The findings were as follows: (1) The frequencies of stress levels, work difficulties, vessel controllability and overall workload of shiphandlers are similar irrespective of environmental conditions and they are able to be represented as shiphandler's subjective evaluation. (2) It is possible to assess and analyze theoretically the correlation between the shiphandler's subjective ecaluation and maneuvering risk each environmental cindition by quantifying the data obtioned from the tests. The results are as follows: ① As the degree of maneuvering risk increases, the shiphandler's subjective evaluation increases sharply near the curvature area of the desgined channel. ② In the area of the curvature of the designed channel, maneuvering risk increases sharply with the danger of running aground under the environmental condition of current and wind comung from the stem.

• Ecology and Resilient Infrastructure
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• v.4 no.1
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• pp.24-33
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• 2017

This study investigates the flow characteristics and bed changes with discharge using a two-dimensional numerical model, Nays2DH. The water depth at the outer part of curved channel is formed deeper from the narrow part after passing through the curved part. The point bar is developed in the wide section and water depth is shallow in the inside of the curved section. The flow is concentrated in the outer pater of the meandering section, which leads to the deep water. In the downstream section where the straight line formed, the flow is concentrated at the center of the bed. Alternating deep water and shallow places are generated due to the continuous formation of meandering. These characteristics are formed by the influence of strong two-stream flow in meandering stream. The dimensionless tractive force is also large in the region where the flow velocity is concentrated. However, in the narrow and sharp meandering river reaches, the pattern of bed changes and the spatial distribution patterns of flow velocity and dimensionless tractive force are inconsistent in the narrow and sharp meandered reaches due to the strong secondary flow.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.27 no.4
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• pp.202-216
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• 2015

In the narrow water channel, which has been frequently deployed in the artificial canal in the South Korea due to the lack of available land, solitary wave type ship induced waves can occur. In order to test this hypothetical view, we carried out the numerical simulation. Numerical model consists of Navier-Stokes Equations and VOF, and the verification is implemented using the data by PIANC (1987) and the analytical model derived in this study. It was shown that numerically simulated front wave height are much larger than the one by PIANC (1987), and the fluctuation of free surface near the channel bank persists much longer (around 20s). For the case of stern waves, numerically simulated wave height are somewhat smaller than the data by PIANC (1987). These results seriously deviates from the general characteristics of ship induced waves observed in the wide water channels, and leads us to conclude that ship induced waves is severely affected by the width of water channel. It was also shown that the currents from the channel banks toward a ship, and currents from the ship toward the channel banks are alternatively occurring due to reflection at the channel banks. The velocity of currents reaches its maximum at 0.90 m/s, and these values are sustained through the entire depth. which implies that severe scourings at the channel bottom can be underway.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.6 no.9
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• pp.2218-2230
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• 2012

In this paper, we propose an efficient channel delay estimation method for orthogonal frequency-division multiplexing (OFDM) systems, especially over doubly-selective fading channels which are selective in both the symbol time domain and subcarrier frequency domain. For the doubly-selective fading channels in single frequency network (SFN), long and strong echoes exist and thus the conventional discrete Fourier Transform (DFT) based channel delay estimation system often fails to produce the exact channel delay profile. Based on the analysis of the discrete-time frequency response of the channel impulse response (CIR) coefficients in the DFT-based channel delay estimation system, we develop a method to effectively extract the true CIR from the aliased signals by employing a simple narrow-band low-pass filter (NB-LPF). The performance of the proposed system is verified using the COST207 TU6 SFN channel model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.749-752
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• 2014

The device performance of n-channel MuGFET with different fin width, existence of spacer and channel length has been characterized. Tri-Gate structure(fin number=10) has been used. There are four kinds of Tri-Gate with fin width=55nm with spacer, fin width=70nm with spacer, fin width=55nm without spacer, fin width=70nm without spacer. DIBL, subthreshold swing, Vt roll-off, (above Short Channel Effect)and hot carrier stress degradation have been measured. From the experiment results, short Channel Effect with spacer was decreased, hot carrier degradation with spacer and narrow fin width was decreased. Therefore, layout of LDD structure with spacer and narrow fin width is desirable in short channel effect and hot carrier degradation.

• Journal of Communications and Networks
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• v.10 no.1
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• pp.63-70
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• 2008

Narrow-band interference (NBI) from the coexisting narrow-band services affects the performance of ultra wideband (UWB) systems considerably due to the high power of these narrow-band signals with respect to the UWB signals. Specifically, IEEE 802.11a systems which operate around 5 GHz and overlap the band of UWB signals may interfere with UWB systems significantly. In this paper, we suggest a novel NBI suppression technique based on singular value decomposition (SVD) algorithm in time hopping UWB (TH-UWB) systems. SVD is used to approximate the interference which then is subtracted from the received signals. The algorithm precision and closed-form bit error rate (BER) expression are derived in the wireless multipath channel. Comparing with the conventional suppression methods such as a notch filter and a RAKE receiver, the proposed method is simple and robust and especially suitable for UWB systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.