• 한국유체기계학회 논문집
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• 제11권4호
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• pp.14-21
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• 2008

The prediction for gaseous leak flows through a narrow crack is important for a leak-before-break (LBB) analysis. Therefore, the methodology to obtain the flow characteristics of gaseous leak flow in a narrow crack for the wide range by using the product of friction factor and Reynolds number correlations (fRe) for a micro-channel is developed and presented. The correlation applied here was proposed by the previous study. The fourth-order Runge-Kutta method was employed to integrate the nonlinear ordinary differential equation for the pressure and the regular-Falsi method was also employed to find the inlet Mach number. A narrow crack whose opening displacement ranges from 10 to $100{\mu}m$ with a crack length in the range from 2 to 200mm was chosen for sample prediction. The present results are compared with both numerical simulation results and available experimental measurements. The results are in excellent agreement with them. The leak flow rate can be approximately predicted by using proposed methodology.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1999년도 추계학술발표회요약집
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• pp.150.1-150
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• 1999

• 해양환경안전학회지
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• 제2권S1호
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• pp.63-73
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• 1996

The assesment of the safety of ship's transit in a curved narrow channl consists of the maneuvering safety determined by the chance of running aground, the maneuvering difficulty determined by shop's workload, and shiphandler's subjective evaluation. In this study to examine the correlation between shiphandler's subjectice evaluation and the maneuvering risk, the real-time and full-mission shiphandling simulator in the Korean Marine Training & Research Institutes(KMTRI) was utilized. In the conning bridge of the shiphandling simulator, 50 experienced masters conducted masters conducted the modeled vessel of 60,000 deadweight tonnage along the designed channel under 3 different envrinmental conditions. The findings were as follows: (1) The frequencies of stress levels, work difficulties, vessel controllability and overall workload of shiphandlers are similar irrespective of environmental conditions and they are able to be represented as shiphandler's subjective evaluation. (2) It is possible to assess and analyze theoretically the correlation between the shiphandler's subjective ecaluation and maneuvering risk each environmental cindition by quantifying the data obtioned from the tests. The results are as follows: ① As the degree of maneuvering risk increases, the shiphandler's subjective evaluation increases sharply near the curvature area of the desgined channel. ② In the area of the curvature of the designed channel, maneuvering risk increases sharply with the danger of running aground under the environmental condition of current and wind comung from the stem.

• Ecology and Resilient Infrastructure
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• 제4권1호
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• pp.24-33
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• 2017

본 연구에서 내성천 만곡부에서 유량의 변화에 의한 흐름 및 하도 변화를 2차원 수치모형인 Nays2DH를 이용하여 분석하였다. 만곡부를 통과 된 후에 하폭이 좁은 구간에서 만곡부 외측으로 수심이 깊게 형성되었다. 하폭이 넓은 구간에서는 점사주가 형성된 만곡부 내측에서는 수심이 얕게 형성되었다. 흐름이 집중되는 만곡부 외측에서는 수심이 깊게 형성되었다. 직선이 형성된 하류 구간에서 흐름은 하도 중앙에 집중되었다. 연속적으로 사행이 형성되면서 번갈아 가며 수심이 깊은 곳과 얕은 곳이 형성되었다. 이러한 특성은 사행하천에서 강한 2차류의 영향을 받아 형성된 것이다. 무차원소류력도 유속이 집중된 부분에 크게 나타났다. 그러나 하폭이 감소하고 급만곡부가 형성된 곳에서는 유속과 무차원소류력의 변화에 대한 하상고 변화가 일치되지 않았다.

• 한국해안·해양공학회논문집
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• 제27권4호
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• pp.202-216
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• 2015

가용한 토지의 부족으로 현재 우리나라 인공운하에서 흔히 관측되는 협수로에서는 고립파 형태의 항주파가 생성되는 것으로 추정된다. 본고에서는 이러한 가설을 확인하기 위해 수치모의를 수행하였다. 수치모의는 삼차원 Navier Stokes 식과 VOF에 기초하여 수행되었으며, 수치모형의 검증은 현재 우리에게 가용한 운하 설계기준 중 가장 빈번히 언급되는 PIANC (1987) 설계안과 본고에서 유도된 해석해에 기초하여 수행되었다. 모의결과, 고립파형태의 항주파가 관측되었으며, 하안 인근에서 계측된 선수파 파고의 경우 수치모의 결과는 PIANC (1987) 설계안을 상회하였으며 상당히 오랜 기간 (이십초 내외) 지속되었다. 선미파의 경우는 하회하였다. 이러한 결과는 광역수로에서 관측되는 항주파의 일반적인 특성과는 상이한 것으로 좁은 수로 폭이 항주파 특성에 영향을 미치는 것으로 판단된다. 또한 선박의 협수로 통과시 선박을 중심으로 양안으로 진행되는 흐름과, 반사로 인해 양안에서 선박으로 진행되는 흐름이 교대로 출현하였으며 이 때 최대 0.90 m/s의 유속이 전 수심대역에서 비교적 균일하게 유지되어, 상당한 쇄굴이 진행될 수 있다고 판단된다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제6권9호
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• pp.2218-2230
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• 2012

In this paper, we propose an efficient channel delay estimation method for orthogonal frequency-division multiplexing (OFDM) systems, especially over doubly-selective fading channels which are selective in both the symbol time domain and subcarrier frequency domain. For the doubly-selective fading channels in single frequency network (SFN), long and strong echoes exist and thus the conventional discrete Fourier Transform (DFT) based channel delay estimation system often fails to produce the exact channel delay profile. Based on the analysis of the discrete-time frequency response of the channel impulse response (CIR) coefficients in the DFT-based channel delay estimation system, we develop a method to effectively extract the true CIR from the aliased signals by employing a simple narrow-band low-pass filter (NB-LPF). The performance of the proposed system is verified using the COST207 TU6 SFN channel model.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2014년도 추계학술대회
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• pp.749-752
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• 2014

Spacer 유무와 핀 폭, 채널길이에 따른 n채널 MuGFET의 단채널 및 열화 특성을 비교 분석 하였다. 사용된 소자는 핀 수가 10인 Tri-Gate이며 Spacer 유무에 따른 핀 폭이 55nm, 70nm인 4종류이다. 측정한 소자 특성은 DIBL, subthreshold swing, 문턱전압 변화 (이하 단채널 현상)과 소자열화이다. 측정 결과, 단채널 현상은 spacer가 있는 것이 감소하였고, hot carrier degradation은 spacer가 있고 핀 폭이 작은 것이 소자열화가 적었다. 따라서, spacer가 있는 LDD(Lightly Doped Drain) 구조이며 핀 폭이 작은 설계방식이 단채널 현상 및 열화특성에 더욱 바람직하다.

• Journal of Communications and Networks
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• 제10권1호
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• pp.63-70
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• 2008

Narrow-band interference (NBI) from the coexisting narrow-band services affects the performance of ultra wideband (UWB) systems considerably due to the high power of these narrow-band signals with respect to the UWB signals. Specifically, IEEE 802.11a systems which operate around 5 GHz and overlap the band of UWB signals may interfere with UWB systems significantly. In this paper, we suggest a novel NBI suppression technique based on singular value decomposition (SVD) algorithm in time hopping UWB (TH-UWB) systems. SVD is used to approximate the interference which then is subtracted from the received signals. The algorithm precision and closed-form bit error rate (BER) expression are derived in the wireless multipath channel. Comparing with the conventional suppression methods such as a notch filter and a RAKE receiver, the proposed method is simple and robust and especially suitable for UWB systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.