• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.161-161
• /
• 2013

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.882-885
• /
• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Current Applied Physics
• /
• 제18권11호
• /
• pp.1174-1181
• /
• 2018

In nanomagnetism, one of the crucial scientific questions is whether magnetic behaviors are deterministic or stochastic on a nanoscale. Apart from the exciting physical issue, this question is also of paramount highest relevance for using magnetic materials in a wealth of technological applications such as magnetic storage and sensor devices. In the past, the research on the stochasticity of a magnetic process has been mainly done by macroscopic measurements, which only offer ensemble-averaged information. To give more accurate answer for the question and to fully understand related underlying physics, the direct observation of statistical behaviors in magnetic structures and magnetic phenomena utilizing advanced characterization techniques is highly required. One of the ideal tools for such study is a full-field soft X-ray microscope since it enables imaging of magnetic structures on the large field of view within a few seconds. Here we review the stochastic behaviors of various magnetic processes including magnetization reversal process in thin films, magnetic domain wall motions in nanowires, and magnetic vortex formations in nanodisks studied by full-field soft X-ray microscopy. The origin triggering the stochastic nature witnessed in each magnetic process and the way to control the intrinsic nature are also discussed.

• 전기화학회지
• /
• 제18권1호
• /
• pp.38-44
• /
• 2015

본 총설은 다공성의 메조포러스 이산화티타늄 박막을 기반으로 하는 양자점-감응 태양 전지의 최근 발전 과정에 대해 정리하였다. 나노스케일의 무기물 양자점이 가지는 본질적 특성에 기반하고 다양한 양자점 구성 물질을 이용하여, 용액-공정 기반의 다양한 3세대 박막 태양전지를 만들 수 있었다. 양자점 감응제는 준비하는 방법에 따라 크게 2가지로 나눌 수 있는데, 첫 번째는 콜로이드 형태로 용액상에서 준비한 다음 $TiO_2$ 표면에 붙이는 것이고 두 번째는 양자점 전구체가 녹아있는 화학조를 이용하여 직접 $TiO_2$ 표면에 성장시키는 것이다. 폴리썰파이드 전해질을 사용하여, 콜로이드 양자점 감응제의 경우는 최근 들어 정밀한 조성 조절을 통하여 전체 광전 변환효율이 ~7%에 이르렀고 화학조 침전법을 이용하여 준비된 대표적 감응제인 CdS/CdSe는 ~5%의 효율을 보이고 있다. 앞으로는 지금까지 보고된 양자점 감응제의 뛰어난 광전류 생성 능력을 유지하면서, 새로운 정공 전달체의 개발 및 계면 조절을 통한 개방 전압과 채움 상수의 개선을 통한 효율 증가 및 안정성에 관한 체계적 연구가 필요한 상황이다.

• Macromolecular Research
• /
• 제17권12호
• /
• pp.976-986
• /
• 2009

With the study goal of firstly elucidating the anisotropic interactions between oriented polymer chain segments and liquid crystal (LC) molecules, and secondly of determining the contributions of the chemical components of the polymer segments to the film surface topography, LC alignment, pretilt, and anchoring energy, we synthesized three dianhydrides, 1,4-bis(4'-t-butylphenyl)pyromellitic dianhydride (BBPD), 1,4-bis(4'-trimethylsilylphenyl)pyromellitic dianhydride(BTPD), and 2,2'-bis(4"-tert-butylphenyl)-4,4',5,5'-biphenyltetracarboxylic dianhydride (BBBPAn), and a series of their organosoluble polyirnides, BBPD-ODA, BBPD-MDA, BBPD-FDA, BTPD-FDA, and BBBPAn-FDA, which contain the diamines 4,4'-oxydianiline (ODA), 4,4'-methylenediamine (MDA), and 4,4'-(hexafluoroisopropylidene)dianiline (FDA). All the polyimides were determined to be positive birefringent polymers, regardless of the chemical components. Although all the rubbed polyimide films exhibited microgrooves which were created by rubbing process, the film surface topography varied depending on the polyimides. In all the rubbed films, the polymer chains were unidirectionally oriented along the rubbing direction. However, the degree of in-plane birefringence in the rubbed film varied depending on the polyimides. The rubbing-aligned polymer chains in the polyimide films effectively induced the alignment of nematic LCs along their orientation directors by anisotropic interactions between the preferentially oriented polymer chain segments and the LCs. The azimuthal and polar anchoring energies of the LCs ranged from $0.45{\times}10^{-4}\;-\;1.37{\times}10^{-4}\;J/m^2$ and from $0.86{\times}10^{-5}\;-\;4.26{\times}10^{-5}\;J/m^2$, respectively, depending on the polyimides. The pretilt angles of the LCs were in the range $0.10-0.62^{\circ}$. In summary, the soluble aromatic polyimides reported here are promising LC alignment layer candidates for the production of advanced LC display devices.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.229-229
• /
• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• 한국재료학회지
• /
• 제22권3호
• /
• pp.130-135
• /
• 2012

We present a method of graphene synthesis with high thickness uniformity using the thermal chemical vapor deposition (TCVD) technique; we demonstrate its application to a grid supporting membrane using transmission electron microscope (TEM) observation, particularly for nanomaterials that have smaller dimensions than the pitch of commercial grid mesh. Graphene was synthesized on electron-beam-evaporated Ni catalytic thin films. Methane and hydrogen gases were used as carbon feedstock and dilution gas, respectively. The effects of synthesis temperature and flow rate of feedstock on graphene structures have been investigated. The most effective condition for large area growth synthesis and high thickness uniformity was found to be $1000^{\circ}C$ and 5 sccm of methane. Among the various applications of the synthesized graphenes, their use as a supporting membrane of a TEM grid has been demonstrated; such a grid is useful for high resolution TEM imaging of nanoscale materials because it preserves the same focal plane over the whole grid mesh. After the graphene synthesis, we were able successfully to transfer the graphenes from the Ni substrates to the TEM grid without a polymeric mediator, so that we were able to preserve the clean surface of the as-synthesized graphene. Then, a drop of carbon nanotube (CNT) suspension was deposited onto the graphene-covered TEM grid. Finally, we performed high resolution TEM observation and obtained clear image of the carbon nanotubes, which were deposited on the graphene supporting membrane.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.75.2-75.2
• /
• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• 반도체디스플레이기술학회지
• /
• 제17권3호
• /
• pp.41-45
• /
• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• 마이크로전자및패키징학회지
• /
• 제27권4호
• /
• pp.83-89
• /
• 2020

지난 수십년간 인류에게 핵심적인 에너지 자원이었던 화석연료가 갈수록 고갈되고 있고, 산업발전에 따른 오염이 심해지고 있는 환경을 보호하기 위한 노력의 일환으로, 친환경 이차전지, 수소발생 에너지 장치, 에너지 저장 시스템 등과 관련한 새로운 에너지 기술들이 개발되고 있다. 그 중에서도 리튬이온 배터리 (Lithium ion battery, LIB)는 높은 에너지 밀도와 긴 수명으로 인해, 대용량 배터리로 응용하기에 적합하고 산업적 응용이 가능한 차세대 에너지 장치로 여겨진다. 하지만, 친환경 전기 자동차, 드론 등 증가하는 배터리 시장을 고려할 때, 수명이 다한 이유로 어느 순간부터 많은 양의 배터리 폐기물이 쏟아져 나올 것으로 예상된다. 이를 대비하기 위해, 폐전지에서 리튬 및 각종 유가금속을 회수하는 공정개발이 요구되는 동시에, 이를 재활용할 수 있는 방안이 사회적으로 요구된다. 본 연구에서는, 폐전지의 재활용 전략소재 중 하나인, 리튬이온 배터리의 대표적 양극 소재 Li2CO3의 나노스케일 패턴 제조 방법을 소개하고자 한다. 우선, Li2CO3 분말을 진공 내 가압하여 성형하고, 고온 소결을 통하여 매우 순수한 Li2CO3 박막 증착용 3인치 스퍼터 타겟을 성공적으로 제작하였다. 해당 타겟을 스퍼터 장비에 장착하여, 나노 패턴전사 프린팅 공정을 이용하여 250 nm 선 폭을 갖는, 매우 잘 정렬된 Li2CO3 라인 패턴을 SiO2/Si 기판 위에 성공적으로 형성할 수 있었다. 뿐만 아니라, 패턴전사 프린팅 공정을 기반으로, 금속, 유리, 유연 고분자 기판, 그리고 굴곡진 고글의 표면에까지 Li2CO3 라인 패턴을 성공적으로 형성하였다. 해당 결과물은 향후, 배터리 소자에 사용되는 다양한 기능성 소재의 박막화에 응용될 것으로 기대되고, 특히 다양한 기판 위에서의 리튬이온 배터리 소자의 성능 향상에 도움이 될 것으로 기대된다.