• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.93-105
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• 2010

Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called "Beyond CMOS Devices," are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies.

• 한국광학회지
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• 제32권5호
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• pp.209-214
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• 2021

본 논문에서는 단파장 영역인 1018 nm에서 최고 출력 626 W를 가진 고출력 이터븀(ytterbium, Yb) 첨가 광섬유 레이저에 대해 보고한다. Yb 광섬유 레이저에서 이득률이 낮은 단파장 영역인 1018 nm에서 레이저를 발진시키기 위한 조건을 이론적으로 조사해보고, 광섬유 끝 단단면 조건에 따른 되먹임 신호를 측정하여 안정적인 레이저 발진 조건에 대하여 연구하였다. 그 결과를 바탕으로 제작한 단일 공진기 구조의 Yb 광섬유 레이저 시스템으로부터 729 W의 펌프 출력에서 최고 출력 626 W의 1018 nm 파장 레이저 출력을 안정적으로 얻을 수 있었으며 그때 기울기 효율은 86.6%로 측정되었다. 본 연구에서 얻은 1018 nm 파장의 Yb 광섬유 레이저 결과는 지금까지 국내에서 보고된 1030 nm 이하 단파장에서 발진된 Yb 광섬유 레이저 출력 중 가장 높은 출력이며, 세계적으로도 상용 Yb 광섬유와 광부품을 사용한 결과 중 가장 높은 출력에 해당된다. 그리고 향후 더 높은 출력을 얻기 위한 방법에 대해 논의하고자 한다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.174-174
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• 2007

• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.539-542
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• 2011

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.578-578
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• 2012

Graphene, a flat one-atom-thick two-dimensional layer of carbon atoms, is considered to be a promising candidate for nanoelectronics due to its exceptional electronic properties. Most of all, future nanoelectronics such as flexible displays and artificial electronic skins require low cost manufacturing process on flexible substrate to be integrated with high resolutions on large area. The solution based printing process can be applicable on plastic substrate at low temperature and also adequate for fabrication of electronics on large-area. The combination of printed electronics and graphene has allowed for the development of a variety of flexible electronic devices. As the first step of the study, we prepared the gate electrodes by printing onto the gate dielectric layer on PET substrate. We showed the performance of graphene field-effect transistor with electrohydrodynamic (EHD) inkjet-printed Ag gate electrodes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.61-61
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• 2011

Polymer solar cells have become one of the rising next generation solar cells due to their potential for lightweight and bendable plastic solar modules. Recently, the power conversion efficiency of polymer solar cells has reached ~8 %, which can make ~6 % plastic solar modules when it comes to the modular aperture ratio of ~80 %. Although this efficiency is far behind that of conventional inorganic solar cells, the plastic solar modules are expected to create new energy market into which the inorganic solar modules could not make inroads. In the near future, the plastic solar modules can be integrated with consumer electronics that should overcome the regulation of energy consumption. For this application, the polymer solar cells should be fabricated in a variety of module shapes, which can be resolved by employing conventional and/or advanced coating and molding technologies of plastics products. In this tutorial, the fundamental aspect of polymer solar cells will be briefly introduced and then recent trends in terms of materials and devices will be reviewed together with showing recent results in organic nanoelectronics laboratory.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.4.2-4.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.124-124
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• 2006

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 동계학술연구발표회 및 스핀트로닉스와 나노물리에관한 국제심포지움
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• pp.13-13
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권4호
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• pp.265-275
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• 2010

In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.