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http://dx.doi.org/10.5370/JEET.2011.6.4.539

Effect of oxygen on the threshold voltage of a-IGZO TFT  

Chong, Eu-Gene (Nanoelectronics, University of Science and Technology)
Chun, Yoon-Soo (Electronic Materials Center, Korea Institute of Science and Technology)
Kim, Seung-Han (Electronic Materials Center, Korea Institute of Science and Technology)
Lee, Sang-Yeol (Nanoelectronics, University of Science and Technology)
Publication Information
Journal of Electrical Engineering and Technology / v.6, no.4, 2011 , pp. 539-542 More about this Journal
Abstract
Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.
Keywords
a-IGZO; Oxide TFT; $O_2$ partial pressure; Threshold voltage;
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