• Title/Summary/Keyword: nanodot

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Control of Nanospacing in TiO2 Nanowire Array Using Electron Beam Lithography

  • Yun, Young-Shik;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.430.1-430.1
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    • 2014
  • According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.

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Synthesis of a Triblock Copolymer Containing a Diacetylene Group and Its Use for Preparation of Carbon Nanodots

  • Kim, Beom-Jin;Oh, Dong-Kung;Chang, Ji-Young
    • Macromolecular Research
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    • v.16 no.2
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    • pp.103-107
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    • 2008
  • Carbon nanodots were prepared by the pyrolysis of a triblock copolymer. The triblock copolymer, poly(methyl methacrylate)-b-polystyrene-b-poly(methyl methacrylate) was synthesized by atom transfer radical polymerization using an initiator containing a diacetylene group. A polymer thin film on a mica substrate was prepared by spin-casting at 2,000 rpm from a 0.5 wt% toluene solution of the triblock copolymer. After drying, the cast film was vacuum-annealed for 48 h at $160^{\circ}C$. The annealed film formed a spherical morphology of polystyrene domains with a diameter of approximately 30 nm. The film was exposed to UV irradiation to induce a cross-linking reaction between diacetylene groups. In the subsequent pyrolysis at $800^{\circ}C$, the cross-linked polystyrene spheres were carbonized and the poly(methyl methacrylate) matrix was eliminated, resulting in carbon nanodots deposited on a substrate with a diameter of approximately 5 mn.

Fabrication of Fe Nanodot Using AAO Prepatterned by Laser Interference Lithography (레이저 간섭 석판술로 전처리된 AAO을 이용한 Fe 나노점 제작)

  • Hwang, H.M.;Kang, J.H.;Lee, S.G.;Lee, J.
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.137-140
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    • 2007
  • The ordering of nanopores in AAO has been improved by using laser interference lithography. After growing Fe and Cu on this substrate in vacuum and removing AAO, Fe nanodots are fabricated. The nanopores in AAO and nanodots are ordered in one dimension following the prepatterning. It has been confirmed from the magnetic hysteresis loop that the Fe nanodots have vortex structure and the dipolar interaction is dominant among them.

Formation of $ZrO_2$ nanodots for the enhanced flux pinning properties in high $T_c$ superconducting films (초전도 자속고정 특성 향상을 위한 $ZrO_2$ 나노점의 형성 연구)

  • Chung, Kook-Chae;Yoo, Jai-Moo;Kim, Young-Kuk;Lee, Hye-Moon;Wang, X.L.;Dou, S.X.
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.1
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    • pp.15-18
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    • 2008
  • To achieve high transport current without degradation under magnetic field, it is essential to artificially generate the pinning sites at which moving magnetic flux can be pinned. In this work, $ZrO_2$ nanodots were formed on the substrate surface using electro-spray deposition method. On top of the nanodots, the extended and effective pinning centers can be created. The positively charged Zr precursor solution was sprayed out from the needle using the corona discharge phenomena. Then, the sprayed precursor was deposited onto the negatively charged substrate surface followed by the heat treatment under the controlled atmosphere. Using the electrostatic force among the charged particles of precursor, evenly distributed and nano-sized dots were formed on the substrate surface. The size and density of the nanodots were studied by Atomic Force Microscopy. Also discussed are the effect of the deposition time and solution concentration on the size and density of the nanodot and processing variables in electro-spray method for the effective flux pinning centers in the superconducting films.

Formation of $Y_{2}O_{3}$ nanodots on substrate surface using the rf-sputtering method

  • Chang, K.C.;Yoo, J.M.;Kim, Y.K.;Wang, X.L.;Dou, S.X.
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.4
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    • pp.6-8
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    • 2008
  • $Y_{2}O_{3}$ nanodots have been deposited on top of the substrate surface using rf-sputtering method. This approach was adopted to be able to modulate the substrate surface with nanodots used as a seed for the flux pinning sites in the superconducting films. The nanodot density of $Y_{2}O_{3}$ was controlled mainly using the deposition time, rf-power, and substrate temperature. $Y_{2}O_{3}$ nanodots with ${\sim}\;50\;nm$ in diameter and ${\sim}\;3\;nm$ in height were obtained at rf-sputtering time of about 15 seconds using 400 watts of rf-power and $630^{\circ}C$ of substrate temperature. As deposition time increased up to about 30 seconds, the interconnected islands of $Y_{2}O_{3}$ nanodots formed, which can be clearly observed with AFM surface image. The substrate surface was covered entirely with $Y_{2}O_{3}$ layer above the deposition time of 60 seconds. The modulated surface morphologies and cross section analysis of deposited $Y_{2}O_{3}$ nanodots at various experimental conditions have been examined using AFM and discussed with respect to the flux pinning sites for the practical application.

MgO nanodot formation using the rf-sputtering method (rf-sputtering법에 의한 MgO 나노점의 형성 연구)

  • Chung, K.C.;Yoo, J.M.;Kim, Y.K.;Wang, X.L.;Dou, S.X.
    • Progress in Superconductivity and Cryogenics
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    • v.11 no.1
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    • pp.5-8
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    • 2009
  • MgO nanodots have been deposited and formed on top of the substrate surface. Mg was sputtered to form the MgO nanodots on the single crystal substrates by rf-sputtering method and followed by heat treatment in the oxygen ambient. The deposition and formation of MgO nanodots have been controlled systematically using the process variables such as substrate temperature, sputtering time, and rf-power. As the substrate temperature increased from the room temperature the density of MgO nanodots decreased. The optimal conditions of MgO nanodots formation using the rf-sputtering was investigated and the maximum density of more than $230/{\mu}m^2$ on single crystal substrates was obtained when the rf-power of 100 watts was applied for 30 seconds at room temperature. The typical size of MgO nanodots was identified to be <160 nm(diameter) and 4-30nm (height) by atomic force microscopy. The modulated surface morphology was examined through surface images and cross-section analysis and discussed for the artificial pinning sites in the superconducting films.

Characteristics of nanolithograpy process on polymer thin-film using near-field scanning optical microscope with a He-Cd laser (He-Cd 레이저와 근접장현미경을 이용한 폴리머박막 나노리소그라피 공정의 특성분석)

  • Kwon S. J.;Kim P. K.;Chun C. M.;Kim D. Y.;Chang W. S.;Jeong S. H.
    • Laser Solutions
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    • v.7 no.3
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    • pp.37-46
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    • 2004
  • The shape and size variations of the nanopatterns produced on a polymer film using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture($P_{in}$), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}=1.2{\mu}W\;and\;V=12{\mu}m/s$. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage is discussed.

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SiGe Nanostructure Fabrication Using Selective Epitaxial Growth and Self-Assembled Nanotemplates

  • Park, Sang-Joon;Lee, Heung-Soon;Hwang, In-Chan;Son, Jong-Yeog;Kim, Hyung-Jun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.24.2-24.2
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    • 2009
  • Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

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Application of black phosphorus nanodots to live cell imaging

  • Shin, Yong Cheol;Song, Su-Jin;Lee, Yu Bin;Kang, Moon Sung;Lee, Hyun Uk;Oh, Jin-Woo;Han, Dong-Wook
    • Biomaterials Research
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    • v.22 no.4
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    • pp.352-359
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    • 2018
  • Background: Black phosphorus (BP) has emerged as a novel class of nanomaterials owing to its unique optical and electronic properties. BP, a two-dimensional (2D) nanomaterial, is a structure where phosphorenes are stacked together in layers by van der Waals interactions. However, although BP nanodots have many advantages, their biosafety and biological effect have not yet been elucidated as compared to the other nanomaterials. Therefore, it is particularly important to assess the cytotoxicity of BP nanodots for exploring their potentials as novel biomaterials. Methods: BP nanodots were prepared by exfoliation with a modified ultrasonication-assisted solution method. The physicochemical properties of BP nanodots were characterized by transmission electron microscopy, dynamic light scattering, Raman spectroscopy, and X-ray diffractometry. In addition, the cytotoxicity of BP nanodots against C2C12 myoblasts was evaluated. Moreover, their cell imaging potential was investigated. Results: Herein, we concentrated on evaluating the cytotoxicity of BP nanodots and investigating their cell imaging potential. It was revealed that the BP nanodots were cytocompatible at a low concentration, although the cell viability was decreased with increasing BP nanodot concentration. Furthermore, our results demonstrated that the cells took up the BP nanodots, and the BP nanodots exhibited green fluorescence. Conclusions: In conclusion, our findings suggest that the BP nanodots have suitable biocompatibility, and are promising candidates as fluorescence probes for biomedical imaging applications.

The Influence of Oxygen Gas Flow Rate on Growth of Tin Dioxide Nanostructures (이산화주석 나노구조물의 성장에서 산소가스 유량이 미치는 영향)

  • Kim, Jong-Il;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.10
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    • pp.1-7
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    • 2018
  • Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.