• Journal of Photoscience
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• v.5 no.4
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• pp.175-179
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• 1998

In this paper, a brief overview of nanocrystallites of metal and semi-conductor materials will be presented, and then the novel synthetic method of high quality CdSe nanocrystallites developed by Bawendi group at MIT will be introduced . It will be shown that results of optical properties of surface modified nanocrystallites give the evidence that the luminescence of CdSe nanocrystallites is not originated from surface related trap states, but from intrinsic spin forbidden core states. Some of the interesting applications of CdSe nano-crystallites will also be discussed at the end.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• ETRI Journal
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• v.26 no.3
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• pp.252-256
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• 2004

We formed silver nanocrystallites by the thermal decomposition of a $Ag^{+1}$-oleate complex, which was prepared by a reaction with $AgNO_{3}$ and sodium oleate in a water solution. The resulting monodispersed silver nanocrystallites were produced by controlling the temperature (290$^{\circ}$C). Transmission electron microscopic (TEM) images of the particles showed a 2-dimensional assembly of the particles with a diameter of $9.5{\pm}0.7nm$, demonstrating the uniformity of these nanocrystallites. An energy-dispersive X-ray (EDX) spectrum and X-ray diffraction (XRD) peaks of the nanocrystallites showed the highly crystalline nature of the silver structure. We analyzed the decomposition of the $Ag^{+1}$-oleate complex using a Thermo Gravimetric Analyzer (TGA) and observed the crystallization process using XRD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.38-41
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• 2002

The variation of photoluminescence(PL) properties of Si thin films was investigated by changing deposition temperatures, Si-rich silicon oxide films on p-type (100) Si substrate have been fabricated by pulsed laser deposition(PLD) technique using a Nd:YAG laser. During deposition, the substrates were kept at the temperature range of room temperature(RT) to $400^{\circ}C$. After deposition, samples were annealed at $800^{\circ}C$ in nitrogen ambient, Strong Blue PL has been observed on RT-deposited Si nanocrystallites. When the deposition temperature was increased over $100^{\circ}C$, PL intensities abruptly decreased. The experimental results show the growing mechanism of Si nanocrystallites by PLD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.88-91
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• 2003

Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.411-412
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• 2000

Si nanocrstallites on p-tyre (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532 and 1064 nm. The base vacuum in the chamber was down to $10^{-5}$ Torr and the pressure of the gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystallites have been annealed at $N_2$ gas. Nitrogen have been used as ambient gases. Strong blue and green luminescence from Si nanocrystallites has been observed in room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355-1064 nm

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.04a
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• pp.38-38
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• 2003

나노입자는 일반적인 크기의 입자에서 볼 수 없는 특성을 나타내므로 촉매, 광학, 자성기록매체, 자성유체로의 자유로운 응용이 기대되어지고 있으며, 다양한 조성의 나노재료 및 제조공정에 관한 연구개발이 활발히 이루어지고 있는 추세이다. 이중 나노재료제조공정은 기상응축, 열분해법, 플라즈마법 및 볼밀링법 등이 상용화되어 있으며, 본 연구에서는 화학적균일성과 다양한 조성으로의 응용이 용이한 화학기상응축공정을 이용하여 Fe/N나노분말을 제조하였다. 제조된 Fe/N 나노 분말의 분해온도 ($50^{\circ}C$~$1100^{\circ}C$)에 따른 미세조직의 변화를 고분해능전자현미경(HRTEM)을 이용하여 관찰하였다. 그 결과 분해온도에 따라 Amorphous +$\alpha$-Fe nanocrystallites $\rightarrow$ Amorphous +$\alpha$-Fe nanocrystallites + $Fe_3N$ nanocrystallites $\rightarrow$ $Fe_3N$ nanocrystallites로 상태변이가 일어났으며, $1100^{\circ}C$의 경우 약 5-6nm크기의 산화막이 형성되어 있으며, 이는 코어두RP의 약 28%를 차지하고 있다.