• International Journal of Highway Engineering
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• v.15 no.6
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• pp.1-9
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• 2013

PURPOSES : About 35% of air pollutant is occurred from road transport. NOx is the primary pollutant. Recently, the importance of NOx removal has arisen in the world. $TiO_2$ is very efficient for removing NOx by photocatalytic reaction. The mechanism of removing NOx is the reaction of photocatalysis and solar energy. Therefore, $TiO_2$ in concrete need to be contacted with solar radiation to be activated. In general, $TiO_2$ concrete are produced by substitute $TiO_2$ as a part of concrete binder. However, 90% of $TiO_2$ in the photocatalysis can not contacted with the pollutant in the air and solar radiation. Coating and penetration method are attempted as the alternative of mixing method in order to locate $TiO_2$ to the surface of structure. METHODS : The goal of this study was to attempt to locate $TiO_2$ to the surface of concrete, so we can use the concrete in pavement construction. The distribution of $TiO_2$ along the depth were confirmed by basing on the comparison of $TiO_2$ compare by using the EDAX(Energy Dispersive X-ray Spectroscopy). RESULTS : $TiO_2$ were distributed within 3mm from concrete surface. This distribution of $TiO_2$ is desirable, since the $TiO_2$ induce photocatalysis are located to where they can be contacted with the air pollutant and solar radiation. CONCLUSIONS : Nano size $TiO_2$ is easily penetration in the top 3mm of concrete surface. By the penetration $TiO_2$ concrete can be produced with the use of only 10% of $TiO_2$, by comparing the mixing types.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.98-98
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• 2010

Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1364-1373
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• 2018

A recognizable form having meaning is called a sign in semiotics. The sign is transformed into a physical counter form in this work. Its internal structure is restricted on the linguistic concept structure. We borrow the concept of a mathematical function from the utility function of a rational personal in the economy. Universalizing the utility function by introducing the consistency of independency on the manner of construction, we construct the probability. We introduce a random variable for the probability and join it to a position variable. Thus, we propose a physical sign and its serial changes in the forms of stochastic equations. The equations estimate three patterns (jumping, drifting, diffusing) of possible solutions, and we find them in the one-day stock-price flow. The periods of jumping, drifting and diffusing were about 2, 3.5, and 6 minutes for the Kia stock on 11/05/2014. Also, the semiotic sign (icon, index, symbol) can be expected from the equations.

• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.185-192
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• 2011

The technique of producing thin film plays a crucial role in modern science and technology as well as in industrial purposes. Numerous efforts have been made to get high quality thin film through surface treatment of materials. PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) are two of the most popular deposition techniques used in both scientific study and industrial use. It is well known that the film deposited by PVD and CVD commonly possesses a columnar microstructure which affects many film properties. In recent years, various types of deposition sources which feature high material uses and excellent film properties have been developed. Electromagnetic levitation source appeared as an alternative deposition source to realize high deposition rate for industrial use. Complex film structures such as nano multilayer and multi-components have been prepared to achieve better film properties. Glancing angle deposition (GLAD) has also been developed as a technique to engineer the columnar structure of thin films on the micro- and nanoscale. In this paper, the trends and major issues of thin film technology based on PVD and CVD have been discussed together with the prospect of thin film technology.

• Advances in nano research
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• v.10 no.5
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• pp.449-460
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• 2021

Flexoelectricity is an interesting materials' property that is more touchable in small scales. This property beside the sandwich structures placed in the center of scientists' attention due to their extraordinary effects on the mechanical properties. Furthermore, in the passage of decades, more elaborated sandwich structures took into consideration results from using honeycomb core. This kind of structure, inspiring from honeycomb core, provides more stiffness to weight ratio, which plays a crucial role in different industries. In this paper, based on the Love-Kirchhoff's hypothesis, Hamilton's principle, modified couple stress theory and Fourier series analytical method, equations of motion for a sandwich plate containing a honeycomb core integrated by two face-sheets have derived and solved analytically. The equations of both face sheets have derived by flexoelectricity consideration. Moreover, it should be noticed that the whole structure rests on the visco-Pasternak foundation. Conducting current research provided an acceptable and throughout study based on flexoelectricity to address the effect of materials' characteristics, length-scale parameter, aspect, and thickness ratios and boundary conditions on the natural frequency of honeycomb sandwich plates. Also, based on the presented figures and tables, there is a close agreement between previous studies and recent work. Due to the high ratio of strength to weight, current model analyzing is capable of taking into account for different vehicles' manufacturing in a high range of industries.

• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.185-189
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• 2011

In this work, nano-sized M-ferrites (M=Co, Ni, Cu, Zn) for the decomposition of carbon dioxide were synthesized by the chemical co-precipitation. From the thermogravimetric analysis, it was clear that the maximum weight loss of each sample took place below $350^{\circ}C$. High temperature calcination resulted in more systematic crystallines, smaller specific surface area and larger particle size. An analysis by FTIR in the range of $375{\sim}406cm^{-1}$ revealed the presence of chelates at the octahedral site, which implies the formation of spinel structure in the ferrites. The current work showed that a $500^{\circ}C$ is the optimum heat treatment temperature of metal ferrites for $CO_2$ decomposition reaction.

• Advances in nano research
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• v.13 no.3
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• pp.259-267
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• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• Advances in nano research
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• v.13 no.2
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• pp.187-197
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• 2022

The synthesis of organic and hybrid organic-inorganic perovskites directly from solution improves the cost- and energy-efficiency of processing. To date, numerous research efforts have been devoted to investigating the influence of the various solvent parameters for the synthesis of lead halide perovskites, focused on the effects of different single solvents on the efficiency of the resulting perovskites. In this work, we investigated the effect of solvent blends for the first time on the structure and phase of perovskites produced via the Lewis base vapor diffusion method to develop a new synthetic approach for water-stable CsPbBr₃ particles with nanometer-sized dimensions. Solvent blends prepared with DMF and water-miscible solvents with different Gutmann's donor numbers (D_N) affect the Pb ions differently, resulting in a variety of lead bromide species with various colors. The use of a DMF/isopropanol solvent mixture was found to induce the formation of the Ruddlesden-Popper perovskite based on lead bromide. This perovskite undergoes a blue color shift in the solvated state owing to the separation of nanoplatelets. In contrast, the replacement of isopropanol with DMSO, which has a high DN, induces the formation of spherical CsPbBr₃ perovskite nanoparticles that exhibit green emission. Finally, the integration of acetone in the solvent system leads to the formation of lead bromide complexes with a yellow-orange color and the perovskite CsPbBr₃.