• Membrane Journal
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• v.34 no.1
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• pp.38-49
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• 2024

Wastewater treatment using membrane bioreactors has been extensively used to alleviate water shortage and pollution by improving the quality of the treated water discharged into the environment. However, membrane biofouling persistently holds back an MBR process by reducing the process efficiency. Herein, we synthesized carbon nanospheres (CNSs) with many hydrophilic oxygen groups and utilized them as an additive to prepare high-performance ultrafiltration (UF) membranes with hydrophilicity and porous pore structure. CNSs were found to form crescent-shaped pores on the membrane surface, increasing the mean surface pore size by about 40% without causing significant defects larger than bubble points, as the CNS content increased by 4.6 wt%. In addition, the porous pore structure of CNS composite membranes was also attributable to the CNS's isotropic morphologies and relatively low particle number density because the aforementioned properties contributed to preventing the polymer solution viscosity from soaring with the loading of CNS. However, too porous structure compromised the mechanical properties, such that CNS2.3 was the best from a comprehensive consideration including the pore structure and mechanical properties. As a result, CNS2.3 showed not only 2 times higher water permeability than CNS0 but also 5 times longer operation duration until membrane cleaning was required.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.218-218
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• 2012

Recently, hexagonal manganites have attracted much attention because of the coexistence of ferroelectricity and antiferromagnetic (AFM) order. The crystal structure of hexagonal manganites consists of $MnO_5$ polyhedra in which $Mn^{3+}$ ion is surrounded by three oxygen atoms in plane and two apical oxygen ions. The Mn ions within Mn-O plane form a triangular lattice and couple the spins through the AFM superexchange interaction. Due to incomplete AFM coupling between neighboring Mn ions in the triangular lattice, the system forms a geometrically-frustrated magnetic state. Among hexagonal manganites, $YMnO_3$, in particular, is the best known experimentally since the f states are empty. In addition, for applications, $YMnO_3$ thin films have been known as promising candidates for non-volatile ferroelectric random access memories. However, $YMnO_3$ has low magnetic order temperature (~70 K) and A-type AFM structure, which hinders its applications. We have synthesized $YMn1_{-x}Cr_xO_3$ (x = 0, 0.05 and 0.1) samples by the conventional solid-state reaction. The powders of stoichiometric proportions were mixed, and calcined at $900^{\circ}C$ for $YMn1_{-x}Cr_xO_3$ for 24 h. The obtained powders were ground, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, and heated up to $1,300^{\circ}C$ and sintered in air for 24 h. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu $K{\alpha}$ radiation. All the magnetization measurements were carried out with a superconducting quantum-interference-device magnetometer. Our experiments point out that the Cr-doped samples show the characteristics of a spin-glass state at low temperatures.

• Journal of the Korean Electrochemical Society
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• v.13 no.4
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• pp.270-276
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• 2010

Nickel-copper foam electrodes with pore gradient micro framework and nano-ramified wall have been prepared by using an electrochemical deposition process. Growth habit of nickel-copper co-deposits was quite different from that of pure nickel deposit. In particular, the ramified structure of the individual particles was getting clear with chloride ion content in the electrolyte. The ratio of nickel to copper in the deposits decreased with the distance away from the substrate and the more chloride ions in the electrolyte led to the more nickel content throughout the deposits. Compositional analysis for the cross section of a ramified branch, together with tactical selective copper etching, proved that the copper content increased with approaching central region of the cross section. Such a composition gradient actually disappeared after heat treatment. It is anticipated that the pore gradient nickel-copper nanostructured foams presented in this work might be a promising option for the high-performance electrode in functional electrochemical devices.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.3
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• pp.165-173
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• 2020

The activity of living microorganism directly or indirectly affects to the biomineralization in sediments and rocks that display the unique biotic structure. Minerals in the biotic structures showed unique properties and bypass the thermodynamic and kinetic barriers. Therefore, investigations on the biotically induced microstructure is essential to identify the new mineral formation mechanism by analyzing crystal structures and morphology at a nano-scale. The significant implication as well as advantages of using scanning electron microscopy to characterize the biotic structures were discussed in this paper for the examples of hydrothermal vent area microbial mat and deep-sea ferromanganese crust sample.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.206-213
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• 2015

An omni-directional, graded-index and textured ZnO nanorods with $MgF_2$ anti-reflective(AR) coating films for the electro optical tracking system(EOTS) by e-beam evaporation method are presented. we achieved that the graded index structure can minimize image tracking interference of EOTS which is comparable to a general AR coating films. Optimized ZnO nanorods with $MgF_2$ AR coating films lead to decreasing Fresnel reflection by gradient refractive index. According to our experiment results, ZnO nanorods with $MgF_2$ AR coating films can be used for various electro optical system to improve the optical performance.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.172-177
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• 2014

We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.150-150
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• 2016

Mankind is enjoying a great convenience of their life by the rapid growth of secondary industry since the Industrial Revolution and it is possible due to the invention of huge power such as engine. The automobile which plays the important role of industrial development and human movement is powered by the Engine Module, and especially Diesel engine is widely used because of mechanical durability and energy efficiency. The main work mechanism of the Diesel engine is composed of inhalation of the organic material (coal, oil, etc.), combustion, explosion and exhaust Cycle process then the carbon compound emissions during the last exhaust process are essential which is known as the major causes of air pollution issues in recent years. In particular, COx, called carbon oxide compound which is composed of a very small size of the particles from several ten to hundred nano meter and they exist as a suspension in the atmosphere. These Diesel particles can be accumulated at the respiratory organs and cause many serious diseases. In order to compensate for the weak point of such a Diesel Engine, the DPF(Diesel Particulate Filter) post-cleaning equipment has been used and it mainly consists of ceramic materials(SiC, Cordierite etc) because of the necessity for the engine system durability on the exposure of high temperature, high pressure and chemical harsh environmental. Ceramic Material filter, but it remains a lot of problems yet, such as limitations of collecting very small particles below micro size, high cost due to difficulties of manufacturing process and low fuel consumption efficiency due to back pressure increase by the small pore structure. This study is to test the possibility of new structure by direct infiltration of SiC Whisker on Carbon felt as the next generation filter and this new filter is expected to improve the above various problems of the Ceramic DPF currently in use and reduction of the cost simultaneously. In this experiment, non-catalytic VS CVD (Vapor-Solid Chemical Vaporized Deposition) system was adopted to keep high mechanical properties of SiC and MTS (Methyl-Trichloro-Silane) gas used as source and H2 gas used as dilute gas. From this, the suitable whisker growth for high performance filter was observed depending on each deposition conditions change (input gas ratio, temperature, mass flow rate etc.).

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.648-655
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• 2000

Synthesis of the crystalline film was investigated under the diamond growth condition with altering the addition of the nitrogen from 0% to 95%. With increasing the nitrogen concentration, surface morphology of the film was changed from the diamond film with {100} growth plane to the non-faceted diamond film with nano-scale grains. It also showed that the deposition of the diamond film could be synthesized using only methane and nitrogen gases without hydrogen gas. Separated particles with diamond structure showed an octahedral shaped I the nitrogen ranges between 30% and 80%, and newly formed hexagonal crystals are observed when substrate temperature with diamond structure, however, also identify that the hexagonal crystal was SiCN composite composed of Si, C and N atoms.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.223-227
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• 2010

Recently, one-dimensional semiconducting nanomaterials have attracted considerable interest for their potential as building blocks for fabricating various nanodevices. Among these semiconducting nanomaterials,, $SnO_2$ nanostructures including nanowires, nanorods, nanobelts, and nanotubes were successfully synthesized and their electrochemical properties were evaluated. Although $SnO_2$ nanowires and nanobelts exhibit fascinating gas sensing characteristics, there are still significant difficulties in using them for device applications. The crucial problem is the alignment of the nanowires. Each nanowire should be attached on each die using arduous e-beam or photolithography, which is quite an undesirable process in terms of mass production in the current semiconductor industry. In this study, a simple process for making sensitive $SnO_2$ nanowire-based gas sensors by using a standard semiconducting fabrication process was studied. The nanowires were aligned in-situ during nanowire synthesis by thermal CVD process and a nanowire network structure between the electrodes was obtained. The $SnO_2$ nanowire network was floated upon the Si substrate by separating an Au catalyst between the electrodes. As the electric current is transported along the networks of the nanowires, not along the surface layer on the substrate, the gas sensitivities could be maximized in this networked and floated structure. By varying the nanowire density and the distance between the electrodes, several types of nanowire network were fabricated. The $NO_2$ gas sensitivity was 30~200 when the $NO_2$ concentration was 5~20ppm. The response time was ca. 30~110 sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.