• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.12
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• pp.1419-1424
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• 2011

Nanoimprint lithography is a next generation lithography technology, which enables to fabricate nano to micron-scale patterns through simple and low cost process. Nanoimprint lithography has been applied in various industry fields such as light emitting diodes, solar cells and display. Functional patterns, including anti-reflection moth-eye pattern, photonic crystal pattern, fabricated by nanoimprint lithography are used to improve overall efficiency of devices in that fields. For these reasons, in this study, sub-micron-scaled functional patterns were directly fabricated on Si and glass substrates by thermal imprinting process using ZnO nano-particles dispersion resin. Through the thermal imprinting process, arrays of sub-micron-scaled pillar and hole patterns were successfully fabricated on the Si and glass substrates. And then, the topography, components and optical property of the imprinted ZnO nano-particles/resin patterns are characterized by Scanning Electron Microscope, Energy-dispersive X-ray spectroscopy and UV-vis spectrometer, respectively.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.6 s.183
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• pp.160-165
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• 2006

We have designed a high-transmission nano aperture in a perfect electric conductor film with the incident beam of 532 nm wavelength. The aperture basically has a C-shape and is known to produce a bright spot nearby the aperture in small size less than diffraction limit. The bright spot is strongly coupled with the local plasmon excited through the aperture hole. The characteristics of transmission and peak power of the aperture output were calculated using finite differential time domain (FDTD) technique, and the geometry of the aperture was determined to get a maximum transmission and peak power. To find the effect of the surface plasmon induced near by the aperture, we calculated the variations of the transmittance and the beam sizes by changing the size of the input beam irradiated on the aperture.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_2
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• pp.729-735
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• 2021

Recently Artificial Intelligence(AI) has been developed and used in various fields. Especially AI recognition technology can perceive and distinguish images so it should plays a significant role in quality inspection process. For stability of autonomous driving technology, semiconductors inside automobiles must be protected from external electromagnetic wave(EM wave). As a shield film, a thin polymeric material with hole shaped micro-patterns created by a laser processing could be used for the protection. The shielding efficiency of the film can be increased by the hole structure with appropriate pitch and size. However, since the sensitivity of micro-machining for some parameters, the shape of every single hole can not be same, even it is possible to make defective patterns during process. And it is absolutely time consuming way to inspect all patterns by just using optical microscope. In this paper, we introduce a AI inspection system which is based on web site AI tool. And we evaluate the usefulness of AI model by calculate Area Under ROC curve(Receiver Operating Characteristics). The AI system can classify the micro-patterns into normal or abnormal ones displaying the text of the result on real-time images and save them as image files respectively. Furthermore, pressing the running button, the Hardware of robot arm with two Arduino motors move the film on the optical microscopy stage in order for raster scanning. So this AI system can inspect the entire micro-patterns of a film automatically. If our system could collect much more identified data, it is believed that this system should be a more precise and accurate process for the efficiency of the AI inspection. Also this one could be applied to image-based inspection process of other products.

• Membrane Journal
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• v.26 no.4
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• pp.291-300
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• 2016

Techniques for selectively separating molecules of gas and liquid states using various separation membranes have been widely used in variety of applications such as chemical, biological, pharmaceutical, and petrochemical industries. As the nanochannel diameter, inter-channel distance and length of the nanochannel of the anodic aluminum oxide (AAO) membranes can be precisely controlled, various studies to effectively separate mixture of various molecules using AAO membrane have been widely carried out. In this study, we fabricated AAO membranes of cylindrical nanochannels of various diameter sizes and of through-hole structure, that is, nanochannels of which both ends of each nanochannel are open. Using those AAO membranes of through-hole nanochannel structure, we studied the selective permeation polymer chains dissolved in a solvent based on hydraulic volume of the polymer chains. We found a precise, quantitative relationship between the radius of gyration of polymer chains that permeated through nanochannels inside AAO membrane and the diameter of nanochannels. In addition, we demonstrate that the behavior of the polymer solution flowing through nanochannel of the AAO membrane can be successfully described with the Hagen-Poiseuille relationship. It is, therefore, possible to theoretically interpret the nanoflow of the solution flowing inside the cylindrical nanochannel.

• Environmental Engineering Research
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• v.16 no.2
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• pp.81-90
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• 2011

Different weight percentages of Ag, Pt, and Au doped nano $TiO_2$ were synthesized using the acetic acid hydrolyzed sol-gel method. The crystallite phase, surface morphology combined with elemental composition and light absorption properties of the doped nano $TiO_2$ were comprehensively examined using X-ray diffraction (XRD), $N_2$ sorption analysis, transmission electron microscopic (TEM), energy dispersive X-ray, and DRS UV-vis analysis. The doping of noble metals stabilized the anatase phase, without conversion to rutile phase. The formation of gold nano particles in Au doped nano $TiO_2$ was confirmed from the XRD patterns for gold. The specific surface area was found to be in the range 50 to 85 $m^2$/g. TEM images confirmed the formation a hexagonal plate like morphology of nano $TiO_2$. The photocatalytic activity of doped nano $TiO_2$ was evaluated using 4-chlorophenol as the model pollutant. Au doped (0.5 wt %) nano $TiO_2$ was found to exhibit higher photocatalytic activity than the other noble metal doped nano $TiO_2$, pure nano $TiO_2$ and commercial $TiO_2$ (Degussa P-25). This enhanced photocatalytic activity was due to the cathodic influence of gold in suppressing the electron-hole recombination during the reaction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Journal of the Korean Society of Industry Convergence
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• v.22 no.5
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• pp.467-473
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• 2019

In this study, approached to improve durability of the multi-functional nano-pattern fabricated on the curved lens surface using nanoimprint lithography (NIL) was proposed, and the effects of the proposed methods on functionality after wear test were examined. To improve the mechanical property of ultraviolet(UV)-curable resin, UV-NIL was conducted at the elevated temperature around $60^{\circ}C$. In addition, micro/nano hierarchical structures was fabricated on the lens surface with a durable film mold. Analysis on the worn surfaces of nano-hole pattern and hierarchical structures and measurements on the static water contact angle and critical water volume for roll-off indicated that the UV curing process with elevated temperature is effective to maintain wettability by increasing hardness of resin. Also, it was found that the micro-scale pattern is effective to protect nano-pattern from damage during wear test.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.169-179
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• 2023

This work studies dielectric breakdown behavior of AAO (anodic aluminum oxide) films formed on pure aluminum at a constant current density in 5 ~ 20 vol.% sulfuric acid (SA) and 2 ~ 8 wt.% oxalic acid (OA) solutions. It was observed that dielectric breakdown voltage of AAO film with the same thickness increased with increasing concentration of both SA and OA solutions up to 15 vol.% and 6 wt.%, respectively, above which it decreased slightly. The dielectric breakdown resistance of the OA films appeared to be superior to that of SA films. After dielectric breakdown test, cracks and a hole were observed. The crack length increased with increasing SA film thickness but it did not increase with increasing OA film thickness. To explain the reason why shorter cracks formed on the OA films than the SA films after dielectric breakdown test, the generation of tensile stresses at the oxide/metal interface was discussed in relation to porosity of AAO films obtained from cross-sectional morphologies.

• Korean Chemical Engineering Research
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• v.47 no.4
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• pp.418-423
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• 2009

MWCNT(multi-wall carbon nanotube)-doped PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), used as a HIL(hole injection layer) material in OLEDs(organic light emitting diodes), was spin-coated on to the ITO glass to form PEDOT:PSS-MWCNT nano composite thin film. Morphology and transparency characteristics of nano composite thin films with respect to the loading percent of MWCNT have been investigated using FT-IR, UV-Vis and SEM. Furthermore, ITO/PEDOT:PSS-MWCNT/NPD/$Alq_3$/Al devices were fabricated, and then J-V and L-V characteristics were investigated. Functional group-incorporated MWCNT was prepared by acid treatment and showed good dispersion property in PEDOT:PSS solution. PEDOT:PSS-MWCNT thin films possessed good transparency property. For multi-layered devices, it was shown that as the loading percent of MWCNT increased, the current density increased but the luminance dramatically decreased. It might be conclusively suggested that the enhanced charge mobility by MWCNT could increase the current density but the hole trapping property of MWCNT could dramatically decrease the hole mobility in the current devices.