• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.410-414
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• 2013

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.

• KEPCO Journal on Electric Power and Energy
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• 제1권1호
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• pp.175-180
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• 2015

본 연구에서는 간단한 화학적 합성 방법을 통하여 스테인레스 기판 위에 nano-bud 형태의 수산화 구리 박막을 형성하였다. 그리고 또 다른 합성 방법인 chemical bath deposition을 이용하여 수산화 구리 나노 구조를 간단하고 친환경적으로 형성하였다. 수산화 구리 박막의 구조적 연구는 X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) 방법을 통하여 이루어졌으며 다결정의 nano-bud 형상을 확인할 수 있었다. 또한 나노 구조로 합성된 수산화구리 전극의 전기화학적 측정은 1M KOH의 전해질 조건에서 cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD)에서 측정되었으며 $340Fg^{-1}$의 높은 비 용량을 보였다. 또한 $1mA\;cm^{-2}$ 의 전력 밀도에서 ${\sim}83Wh\;kg^{-1}$의 높은 에너지 밀도와 ${\sim}3.1kW\;kg^{-1}$의 높은 출력 밀도를 가지며 향상된 전극의 성능을 보였다. 이러한 뛰어난 의사 캐패시터의 성능은 수산화 구리의 nano-bud 형상에 의한 효과로 확인할 수 있었다. 본 연구를 통하여 화학적 합성 방법의 확장을 통하여 수산화 구리 전극의 에너지 저장 장치로써의 성능을 확인할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.647-652
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• 2015

Pull-in voltage model of nano-electro-mechanical system with graphene is investigated for the device optimization. In the pull in voltage model, thickness of graphene layer is assumed to be uniform in vertical and lateral direction. Finite element analysis simulation has verified the feasibility of the suggested model. From the suggested model, pull-in voltage change with graphene thickness and cantilever length can be estimated. Maximum induced stress and graphene thickness have a reciprocal relationship.

• KEPCO Journal on Electric Power and Energy
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• 제2권1호
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• pp.97-101
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• 2016

산화아연은 다양한 나노 구조와 특유의 특성으로 인하여 여러 분야에서 많은 관심을 받고있는 물질이다. 산화아연을 합성하는 다양한 방법 중에서, 수열합성법은 간단하고 친환경적인 장점을 가지고 있다. 나노 구조를 가지는 산화아연 박막은 수열합성법을 통하여 FTO 전극 위에 제작되었다. 성장된 산화아연은 X-ray diffraction (XRD)와 Field-emission scanning electron microscopy (FESEM)을 통하여 분석되었다. XRD 분석에서 산화아연 박막이 자연상태의 hexagonal wurtzite 상으로 구성되어 있음을 확인하였으며 SEM 사진에서는 나노 로드 형태를 구성하고 있는 것을 확인할 수 있었다. 본 연구에서는 UV 영역의 흡수 스펙트럼을 분석하여 산화아연이 보이는 365 nm 파장에서의 흡수를 확인하였다. 또한 photoluminescence 방출을 분석한 결과, 424 nm의 band edge emission과 500 nm에서 산화아연의 oxygen vacancies에 의한 방출을 확인하였다. 또한 라만 스펙트럼 분석을 통하여 본 연구진이 제작한 산화아연이 높은 결정성을 가지고 있는 것을 확인할 수 있었다. 이러한 연구를 통하여 다양한 특성을 가진 산화아연의 광촉매적 적용을 기대할 수 있다.

• 대한전자공학회논문지SD
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• 제46권12호
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• pp.10-17
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• 2009

Double-Gate MOSFET 구조를 사용한 Nano-Electro-Mechanical MOSFET (NEMFET)는 게이트 길이가 짧아지면서 나타나는 단채널 현상을 효과적으로 제어하는 새로운 구조의 차세대 소자이다. 특히 공핍형 Double-gate NEMFET (Dep-DGNEMFET)은 차단 상태에서 얇은 산화막을 가지므로 subthreshold 전류가 효과적으로 제어된다. 이러한 Dep-DGNEMFET 특성에 대한 해석적 수식을 유도하고 소자 구조가 변화하는 경우의 특성 변화를 분석하였다. 또한 ITRS (International Technology Roadmap for Semiconductors) 전류 기준값을 만족시키기 위하여 Dep-DGNEMFET 소자 구조를 최적화 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.198-198
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• 2012

Graphene has been the subject of intense study in recent years owing to its good optoelectronic properties, possibility for stretchable electronics, and so on. Especially, many research groups have studied about graphene nanostructures with various sizes and shapes. Graphene needs to be fabricated into useful devices with controllable electrical properties for its successful device applications. However, this been far from satisfaction owing to a lack of reliable pattern transfer techniques. Photolithography, nanowire etching, and electron beam lithography methods are commonly used for construction of graphene patterns, but those techniques have limitations for getting controllable GNRs. We have developed a novel nanoscale pattern transfer technique based on an electro-hydrodynamic lithography providing highly scalable versatile pattern transfer technique viable for industrial applications. This technique was exploited to fabricate nanoscale patterned graphene structures in a predetermined shape on a substrate. FE-SEM, AFM, and Raman microscopy were used to characterize the patterned graphene structures. This technique may present a very reliable high resolution pattern transfer technique suitable for graphene device applications and can be extended to other inorganic materials.

• 대한기계학회논문집A
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• 제32권6호
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• pp.459-464
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• 2008

We present a novel microcantilever device with nano-interdigitated electrodes (nano-IDEs) and DNA selective immobilization on the nano-IDEs for biosensing applications. Using the nano-IDEs and cyclic voltammetric methods, we have achieved selective immobilization of DNA with submicrometer spatial resolution on a freestanding microcantilever. $70{\sim}500\;nm$-wide gold (Au) nano-IDEs are fabricated on a low-stress SiNx microcantilever with dimensions of $100{\sim}600\;{\mu}m$ in length, and $15{\sim}60\;{\mu}m$ in width, with a $0.5\;{\mu}m$ thickness using electron beam lithography and bulk micromachining. Streptavidin is selectively deposited on one side of the nano-IDEs using cyclic voltammetry at a scan rate of 0.1 V/s with a range of $-0.2{\sim}0.7\;V$ during $1{\sim}5$ cycles. The selective deposition of dsDNA is confirmed by fluorescence microscopy after labeling with YOYO-1 dye.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.235-238
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• 2009

To study the relationship between spark ignition and the gap in the nano-scale region, the electric potential was applied to between a Pt-Ir tip and a gold substrate. The tip was sharpened by electro-chemical etching process in the solution of $CaCl_2;H_2O$ and acetone. The radius of tip was measured to be around 200nm and attached to the scanning probe microscope to control the gap between the tip and the substrate. The electric potential of 10V to 80V was applied to initialize the spark. The gaps and the current profile were measured to analyze the characteristics of spark ignition. A spark sustaining time was measured to be between 50ns and 200ns depending on the applied electric potential and the gap between the electrodes. The continuous electric discharge was successfully sustained up to 1 second of spark or arc time. The developed process can be applicable to the micro-scale fabrication of automotive sensors as a similar concept of GTAW.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.521-522
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• 2008

An etch-less simple method was developed to fabricate two-dimensional nanostructures on glass substrate directly by using UV curable polymer resin and UV nanoimprint lithography in order to improve output coupling efficiency of OLEDs. OLEDs integrated on nanoimprinted substrates enhanced electro-luminance intensity by up to 50% compared with the conventional device.