Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Characterization of 32x32 Silicon Cantilever Array using MEMS Process

MEMS 공정을 이용한 32x32 실리콘 캔틸레버 어레이 제작 및 특성 평가

  • 김영식 (충북대학교 반도체공학과) ;
  • 나기열 (충북대학교 반도체공학과) ;
  • 신윤수 (충북대학교 반도체공학과) ;
  • 박근형 (충북대학교 반도체공학과) ;
  • 김영석 (충북대학교 반도체공학과)
  • Published : 2006.10.01
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Abstract

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

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References

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