• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1590-1592
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• 2007

In this study, we prepared CNF (carbon nanofiber) by the solvothermal method for FED (field emission display) applications. We controlled several conditions to synthesize effective CNF for field emission applications. Nano-sizesd Pt nanoparticles were coated on the CNF. In this study, we have applied Pt nanoparticles- coated CNF which can be produced in mass, to field emission application.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.517-518
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• 2006

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.

• Advances in nano research
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• v.3 no.1
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• pp.39-47
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• 2015

We study a device structure which can be used to generate pure valley current and valley polarized current using quantum adiabatic pumping. The design of the structure allows the flexibility of changing the structure from one for pure valley current generation to one for valley polarized current generation by changing the applied electric potentials through changing the symmetry of the structure. The device is useful for the development of valleytronic devices.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• Journal of Industrial Technology
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• v.25 no.B
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• pp.127-133
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• 2005

Manufacturing methods of Nano particles can be distinguished by top-down technology as physical method and bottom-up technology as chemical synthetic method. Top-down technology is a kind of method for making microstructure as like carving after forming a macroscopic structure in advance and its typical methods are ball milling, gas condensation method and so on. Nano Particles synthesized by bottom-up method have got to do dispersing process for using them as actual nano particles because their viscosity are very strong and so easy to shape cohesive substances. Therefore, this study is about a particle separating device which separates a certain constant size of grains processed already in mill and mixer because we mostly use media agitating mill as a device of milling and dispersing and we necessarily use very slight balls as media for manufacturing nano particles in the machine. The centrifugal device has been designed for passing and separating below a certain type of grain size after final process of particles in the mill.

• Journal of Magnetics
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• v.12 no.1
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.665-666
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1034-1037
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5393-5397
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• 2011

The compressing-cutting device is used for manufacturing nano tube. the purpose of this study is to design and manufacture the compressing-cutting device witch has safety and stable performance. The most important core technology, in nano tube manufacturing, is to seam the each end of tube with appropriate pressure and to cut it off into the two part safely not to leak injected medium. Since the compressing pressure and the cutoff speed make the quality of nano tube, they are very important. This study will show the processes of design and manufacturing of compressing-cutting device.