P형 실리콘 나노선과 Au 나노입자를 이용한 나노플로팅게이트 메모리소자의 전기적 특성 분석

Memory characteristics of p-type Si nanowire - Au nanoparticles nano floating gate memory device

  • Yoon, Chang-Joon (Department of Electrical Engineering and Institute of Nano Science, Korea University) ;
  • Yeom, Dong-Hyuk (Department of Electrical Engineering and Institute of Nano Science, Korea University) ;
  • Kang, Jeong-Min (Department of Electrical Engineering and Institute of Nano Science, Korea University) ;
  • Jeong, Dong-Young (Department of Electrical Engineering and Institute of Nano Science, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering and Institute of Nano Science, Korea University)
  • 발행 : 2008.07.16

초록

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

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