• Current Photovoltaic Research
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• v.5 no.1
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• pp.25-27
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• 2017

Nanoscale textured black silicon has attracted intensive attention due to its great potential as applications in multicrystalline silicon-based solar cells. It absorbs sunlight over a broad range of wavelengths but introduces large recombination centers, non-uniform doping into cell. In this study, we present a metal-assisted chemical etching technique plus alkaline etching process to fabricate nanoscale pyramid structures with optimized condition. To make the structures, silver nanoparticles-loaded mc-Si wafer was submerged into $H_2O_2/HF$ solution first for nanohole texturing the wafer and textured wafer etched again with KOH solution for making nanoscale pyramid structures. The average reflectivity (350-1050 nm) is about 8.42% with anti-reflection coating.

• Journal of ILASS-Korea
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• v.8 no.1
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• pp.16-22
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• 2003

Zeta potential measurements of colloid particles suspended in a liquid are performed by a Zeta Meter developed. There are many applications of colloid stability in spray technology, paints, wastewater treatment, and pharmaceuticalse. Zeta potentials of charged particles are obtained by measuring the electrophoretic velocities of the particles using video enhanced microscopy and image analysis program. The values of zeta potential of polystyrene latex(PSL), $silica(SiO_2)$M, polyvinylidence difluoride(PVDF), silicon nitride, and alumina particles in deionized (DI) water were measured to be -40.5, -31.9, -25.2, -15.1 and -10.1mV, respectively. The particles having high zeta potential less than -20 mV are stable in DI water, because the double layers of them have strong repulsive forces mutually, and the particles having low zeta potential over -20mV are unstable due to Van Der Waals forces. Silica(>20nm), PSL, aluminum and PVDF particles were found to be stable that would remain separate and well disperse, while silicon nitride and alumina particles were found to be unstable that would gradually agglomerate in DI water.

• Journal of Microbiology and Biotechnology
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• v.29 no.7
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• pp.1096-1103
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• 2019

UCB-1 is the commercial rootstock of pistachio. Reproduction of this rootstock by tissue culture is limited by low levels of proliferation rate. Therefore, any compound that improves the proliferation rate and the quality of the shoots can be used in the process of commercial reproduction of this rootstock. Use of plant growth-promoting bacteria is one of the best ideas. Given the beneficial effects of nanoparticles in enhancement of the growth in plant tissue cultures, the aim of the present study was to investigate the effects of nanoencapsulation of plant growth-promoting rhizobacteria (using silica nanoparticles and carbon nanotubes) and their metabolites in improving UCB1 pistachio micropropagation. The experiment was conducted in a completely randomized design with three replications. Before planting, treatments on the DKW medium were added. The results showed that the use of Pseudomonas fluorescens VUPF5 and Bacillus subtilis VRU1 nanocapsules significantly enhanced the root length and proliferation. The nanoformulation of the VUPF5 metabolite led to the highest root length (6.26 cm) and the largest shoot (3.34 cm). Inoculation of explants with the formulation of the metabolites (both bacterial strains) significantly elevated the average shoot length and the fresh weight of plant compared to the control. The explants were dried completely using both bacterial strains directly and with capsule coating after the three days.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.82-82
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• 2008

One-dimensional (1D) nanowires have been received much attention due to their potential for applications in various field. Recently some logic applications fabricated on various nanowires, such as ZnO, CdS, Si, are reported. These logic circuits, which consist of two- or three field effect transistors(FETs), are basic components of computation machine such as central process unit (CPU). FETs fabricated on nanowire generally have surrounded shapes of gate structure, which improve the device performance. Highly integrated circuits can also be achieved by fabricating on nano-scaled nanowires. But the numerical and SPICE simulation about the logic circuitry have never been reported and analyses of detailed parameters related to performance, such as channel doping, gate shapes, souce/drain contact and etc., were strongly needed. In our study, NAND and NOT logic circuits were simulated and characterized using 2- and 3-dimensional numerical simulation (SILVACO ATLAS) and built-in spice module(mixed mode).

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.12
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• pp.668-673
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• 2013

In this study, specimens with nano-sized porous thin films were manufactured by injecting fluorescence solution into the pores. We intended to find out the difference of the fluorescence intensity in each region of the specimen through an experimental apparatus that makes a temperature field. Before conducting experiments, the optimized manufacturing conditions were determined by analysis of all parameters that influence the emission intensity, and the experiments were carried out with the specimens produced in the optimized conditions. Then, the calibration curves of the fluorescence intensity versus temperature were performed by taking the intensity distributions from the specimen in various temperature fields. The surfaces of specimens were coated with Rhodamine-B (Rh-B) fluorescent dye and measured based on the fluorescence intensity. Silica (SiO2) nanoporous structure with 1-um thickness was constructed on a cover glass, and fluorescence dye was absorbed into these porous thin films.

• Journal of Radiation Industry
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• v.4 no.4
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• pp.347-352
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• 2010

In this study, we addressed a novel nanosized curdlan-silica complex, which is curdlan bound to silica, for the development of a sustain-releasing micro element fertilizer formulation. The complex was obtained as follow steps; First, Curdlan polymer, sodium silicate ($Na_2SiO_3$) and isopropyl alcohol were dissolved in DDW. Next the resultant solution was irradiated by $^{60}Co$ gamma-irradiator (150 TBq of capacity; ACEL, Canada). Then $MgSO_4$ was treated with the resultant solution. The obtained colloidal solution was dried by freeze dryer. Finally, we obtained a novel nanosized curdlan-silica formulation containing $MgSO_4$ from the colloidal solution. The morphology of the complex was characterized by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The nanosized curdlan-silica complex has a particle size ranging from 20 to 80 nm and high stability. Our results suggested that the nano-complex can be applicable to use in various sustain-releasing formulation for pesticide delivery system (PDS).

• Metals and materials international
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• v.24 no.6
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• pp.1285-1292
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• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.677-681
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• 2021

The Mn-Zn ferrite powders were prepared by high energy ball milling, then compacted and sintered at various temperatures to assess their sintering behavior and magnetic properties. The initial ferrite powders were spherical in shape with the size of approximately 70 ㎛. After 3 h of ball milling at 300 rpm, aggregated powders ~230 nm in size and composed of ~15 nm nanoparticles were formed. The milled powders had a density of ~70 % when compacted at 490 MPa for 3 min. In the samples subsequently sintered at 1,273 K ~ 1,673 K for 3 h, the MnZnFe₂O₄ phase was detected. The density of the sintered samples had a tendency to increase with increasing sintering temperature up to 1,473 K, which produced the highest density of 98 %. On the other hand, the sample sintered at 1,373 K had the highest micro-hardness of approximately 610 Hv, which is due to much finer grains.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.881-887
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• 2014

Micro-sized Peltier coolers are generally employed for uniformly distributing heat generated in the multi-chip packages. These coolers are commonly classified into vertical and planar devices, depending on the heat flow direction and the arrangement of thermoelectric materials on the used substrate. Owing to the strong need for evaluation of performance of thermoelectric modules, at present an establishment of proper theoretical model has been highly required. The design theory for micro-sized thermoelectric cooler should be considered with contact resistance. Cooling performance of these modules was significantly affected by their contact resistance such as electrical and thermal junction. In this paper, we introduce the useful and optimal design model of small dimension thermoelectric module.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.