• Proceedings of the Computational Structural Engineering Institute Conference
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• 2011.04a
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• pp.116-118
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• 2011

일반적으로 나노입자의 크기는 나노복합체의 역학적 특성에 상당한 영향을 미친다. 이에 본 연구에서는 나노입자 크기를 고려한 나노복합체 재료 구성모델 (Kim et al., 2011)을 소개하고자 한다. Kim et al. (2011)에 의해서 나노입자 크기효과를 위한 Size-dependent Eshelby tensor가 미세역학 모델에 적용되었으며, 나노스케일 해석과 함께 다양한 수치해석을 수행하였다. 특히, 본 연구에서는 이를 활용하여 $SiO_2$/Epoxy 나노복합체의 역학적 특성을 예측해 보았다.

• Journal of Surface Science and Engineering
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• v.39 no.4
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• pp.153-159
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• 2006

Nanodiamond films were deposited on Si substrate by introducing a time dependent on/off modulation of $CH_4\;and\;O_2$ flows in a vertical-type microwave plasma enhanced chemical vapor deposition system. Surface morphology and diamond quality of the film were investigated as a function of the on/off modulation time interval. The diamond nucleation density on the substrate was enhanced under low temperature and low pressure condition. In addition, the diamond nucleation density was enhanced by increasing the on/off modulation time interval. Enhanced diamond quality was noticeable under the condition of a longer on/off modulation time interval. It was suggested that the nanodiamond nuclei formed the cluster formation.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.281-284
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• 2004

본 연구에서는 분무열분해 공정에 의해 폐산용액으로부터 평균입도 100nm 이하의 나노 분말을 제조하였다. 용액 내의 Fe 성분의 농도가 20 g/$\iota$로부터 200 g/$\iota$로 증가됨에 따라 생성된 분말의 입도는 30 nm로부터 60 nm 까지 점점 증가하는 반면 입도분포는 더욱 불규칙하게 나타나고 있었다. 또한 용액 내의 농도 증가에 따라 $NiFe_2O_4$ 상의 생성비율이 현저히 증가하고 있었으며, 입자들의 비표면적은 현저히 감소하였다. 공기압력이 $1 kg/cm^2$까지는 분말의 평균입도는 80$\~$100 nm로 공기압력의 증가에 따라 분말들의 평균입도는 현저한 변화를 나타내지 않았으며, 생성된 상들의 비율의 현저한 변화도 나타나지 않았다. 공기압력이 $3kg/cm^2$로 증가하는 경우에는 평균입도가 약 70 nm로 감소하였으며 $NiFe_2O_4$의 생성비율도 감소하였다.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.347-352
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• 2010

This study reports a novel method off abricating highly sensitive hydrogen gas sensors based on PdO thin films. The PdO thin films with a thickness of 40 nm were deposited on Si substrates under Ar and $O_2$ ambient conditions using a reactive de magnetron sputtering system. Considerable changes in the resistance of the palladium oxide thin films were observed when they were initially exposed to hydrogen gas, as a result of the reduction process. The sensitivity of the PdO thin films was found to be as high as 90%. After the thin films were exposed to hydrogen gas, the nano-sized cracks were discovered to have formed on the surface of the PdO thin films. These types of nano-cracks that formed on the deoxidized PdO thin films are known to play a key role incausing a four-fold reduction of the response time of the absorption process. The results of this study demonstrate that deoxidized PdO thin films can be applied for use in the creation of high-sensitivity hydrogen sensors.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• Journal of the Korean Ceramic Society
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• v.42 no.6 s.277
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• pp.377-383
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• 2005

Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness, as compared with the original glass. This improvement is due to the microstructure consisting of very small crystals. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5$ glasses were irradiated to strengthen by the crystallization using Femto second laser Pulses. Through the UV/VIS spectroscope, XRD, Nano-indenter and SEM etc., heat-treated and irradiation of laser pulses without heat-treated samples were analyzed. Two kinds of samples, heat-treated and laser irradiated without heat-treated samples, showed the peaks in the same wavelength near 360 nm. Especially, samples irradiated by 140 mW laser with XYZ stage having at the rate of 100$\~$l000 $\mu$m/s had the largest absorption peak among them, and heat-treated samples was shown lower absorption range than over 90 mW laser irradiated samples. Moreover, samples irradiated by laser had higher values ($4.4\~4.56{\times}10^{-3}(Pa)$) of elastic modulus which related with strength of glass than values of heat-treated samples and these are 1.2$\~$1 .5 times higher values than them of mother glass.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Journal of Adhesion and Interface
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• v.25 no.2
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• pp.56-62
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• 2024

In this study, LiDAR-detectable black hollow-structured materials are synthesized using different reducing agents to evaluate their applicability to LiDAR sensor. Initially, white SiO₂/TiO₂ core/shell (WST) materials are fabricated via a sol-gel method, followed by a reduction using ascorbic acid (AA) and sodium borohydride (SB). After the reduction, subsequent etching of the SiO₂ core leads to the formation of two different black hollow-structured materials (AA-BHT and SB-BHT). The lightness (L^*) and near-infrared (NIR) reflectance (R%) of AA-BHT are measured as ca. 19.1 and 34.5 R%, and SB-BHT shows values of ca. 11.5 and 31.8 R%, respectively. While AA-BHT exhibits higher NIR reflectance compared to SB-BHT, it displays slightly lower blackness. Compared with core/shell structured materials, improved NIR reflectance of both AA-BHT and SB-BHT is attributed to the morphology of hollow- structured materials, which increase light reflection at the interface between air and black TiO₂ according to the Fresnel's reflection principle. Consequently, both AA-BHT and SB-BHT are effectively detected by the commercially available LiDAR sensors, validating their suitability as black materials for autonomous vehicle and environment.