• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Journal of applied mathematics & informatics
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• v.18 no.1_2
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• pp.465-486
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• 2005

We study the relationship between intuitionistic fuzzy ideals and intuitionistic fuzzy congruences on a distributive lattice. And we prove that the lattice of intuitionistic fuzzy ideals is isomorphic to the lattice of intuitionistic fuzzy congruences on a generalized Boolean algebra.

• Advances in aircraft and spacecraft science
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• v.9 no.5
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• pp.377-400
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• 2022

The aim of this work is a numerical comparison (FEM) between lattice pyramidal-core panel and honeycomb core panel for different core thicknesses. By evaluating the mid-span deflection, the shear rigidity and the shear modulus for both core types and different core thicknesses, it is possible to define which core type has got the best mechanical behaviour for each thickness and the evolution of that behaviour as far as the thickness increases. Since a specific base geometry has been used for the lattice pyramidal core, the comparison gives us the opportunity to investigate the unit cell strut angle giving the higher mechanical properties. The presented work considers a detailed FEM modelling of a standard 3-point bending test (ASTM C393/C393M Standard Practice). Detailed FEM modelling addresses to detailed discretization of cores by means of beam elements for lattice core and shell elements for honeycomb core. Facings, instead, have been modelled by using shell elements for both sandwich panels. On lattice core structure, elements of core and facings are directly connected, to better simulate the additive manufacturing process. Otherwise, an MPC-based constraint between facings and core has been used for honeycomb core structure. Both sandwich panels are entirely built of Aluminium alloy. Prior to compare the two models, the FEM sandwich panel model with lattice pyramidal core needs to be validated with 3-point bending test experimental results, in order to ensure a good reliability of the FEM approach and of the comparison. Furthermore, the analytical validation has been performed according to Allen's theory. The FEM analysis is linear static with an increasing midspan load ranging from 50N up to 500N.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.195-203
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• 2020

This paper presents a parasitic inductance reduction design method for the stable driving of GaN HEMT. To reduce the parasitic inductance, we propose a vertical lattice loop structure with multiple loops that is not affected by the GaN HEMT package. The proposed vertical lattice loop structure selects the reference loop and designs the same loop as the reference loop by layering. The design reverses the current direction of adjacent current paths, increasing magnetic flux cancellation to reduce parasitic inductance. In this study, we validate the effectiveness of the parasitic inductance reduction method of the proposed vertical lattice loop structure.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

• Journal of the Korean Statistical Society
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• v.23 no.2
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• pp.503-503
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• 1994

• Kyungpook Mathematical Journal
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• v.61 no.3
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• pp.455-459
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• 2021

We partially characterize criteria for the n-universality of positive-definite integer-matrix quadratic forms. We then obtain the uniqueness of Oh's 8-universality criterion [11] as a corollary.

• Journal of the Chungcheong Mathematical Society
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• v.25 no.4
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• pp.717-723
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• 2012

In this paper, we investigate when gr-multiplication modules are finitely generated and show that if M is a finitely generated gr-multiplication R-module then there is a lattice isomorphism between the lattice of all graded ideals I of R containing ann(M) and the lattice of all graded submodules of M.

• Journal of applied mathematics & informatics
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• v.13 no.1_2
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• pp.385-392
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• 2003

Using a fuzzy filter, a new congruence relation induced by the fuzzy filter is given in lattice implication algebras, and some of their properties are investigated.