• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.739-745
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• 1998

The objective of this paper is to provide experimental data of Er(rare- earth)doped $SiO_2$thin film made by sputtering methods. The deposition rate of silica glass by sputtering method was 55$\AA$/min. In EDD measurements, the average Er concentration in the deposited film was 0.77(wt%). After annealing at $900^{\circ}C$, the Cl concentration decreased from 3.79(wt%) to 1.52(wt%). The refractive indices of the core $n_1$, cladding $n_2$ were 1.458, 1.558 respectively at 632.8 nm. The refractive index difference between core and cladding, $\Delta$n was 0.1. The refractive index profile of core and cladding interface shows step profile. In the study, $SiO_2$ glass films of Si wafer were successfully doped with active erbium. Therefore, this experimental data will be applicable for fabrications of Er doped planar integrated optical device.

• 전자공학회논문지D
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• 제35D권12호
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• pp.53-58
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• 1998

다결정 실리콘 박막 트랜지스터를 이용한 회로의 성능 향상을 위하여 새로운 구조의 4-terminal buried channel poly-Si TFT(BCTFT)를 설계하고 제작하였다. BCTFT는 moderate 도핑이 된 buried channel을 이용하므로 기존의 다결정 실리콘 TFT보다 ON-전류와 전계 효과 이동도가 n-형과 p-형 소자 각각 5배와 10배 향상되었다. BCTFT는 moderate 도핑된 buried 채널과 counter 도핑된 body 사이의 junction 공핍에 의하여 캐리어의 이동이 억제 되므로 OFF-전류가 증가하지 않았다.

• 공업화학
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• 제23권3호
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• pp.308-312
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• 2012

암모니아를 이용하여 질소가 도핑된 광촉매를 제조하고 이에 따른 가시광 광촉매 활성효과를 알아보았다. 질소 도핑된 $TiO_2$ 광촉매가 태양광영역에서 분해되는 정도를 확인하기 위해서 태양광에 조사하에 메틸렌블루 염료분해 실험을 수행하였다. SEM 이미지 분석결과 질소가 도핑된 $TiO_2$ 광촉매의 응집 입자가 감소함을 알 수 있었고, XRD 결과 $600^{\circ}C$에서 열처리된 질소 도핑 $TiO_2$ 광촉매는 아나타제 구조와 루타일이 존재하고 있음을 알 수 있었다. 또한, X선 광전자 분광기 분석을 통하여 암모니아 반응시간에 따라서 $TiO_2$ 광촉매에 N의 조성 증가를 알 수 있었다. $TiO_2$ 광촉매의 질소 도핑에 의하여 메틸렌블루에 대한 광분해 효과가 도핑되지 않은 시료에 비해 증가하였다. 또한 질소 도핑은 $TiO_2$ 광촉매의 결정에도 영향을 주었다.

• 한국재료학회지
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• 제25권1호
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• 대한전자공학회논문지
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• 제27권12호
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• pp.1859-1864
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• 1990

The effect of H+ and OH- ion concentrations at doped Si semiconductor/pH buffer solution interfaces were investigated in terms of cyclic current-voltage characteristics. The effects of space charge on oppositely doped Si semiconductors, i.e., p-and n-Si semiconductors, can be effectively applied to study the pH effects and the slow surface states at the interfaces. The adsorptions of H+ and OH- inons on the doped Si semiconductor surfaces are physical adsorption rather than chemical adsorption. Adsorptive processes and charging effects of the slow surface states can be explained as the potential barrier variations and the related current-voltage characteristics at the interfaces. Under forward bias, the charged slow surface states on the p-and n-si semiconductor surface are donor and acceptor slow surface states, respectively. The effects of minority carriers on the slow surface states can be neglected at the doped Si semiconductor interfaces.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• 산업기술연구
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• 제32권A호
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• pp.95-102
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• 2012

To advance luminance efficiency of Titania at visible range, N-doped $TiO_2$ was prepared by using ammonium hydroxide as a source of nitrogen. The photoactivities of the synthesized $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, UV-C, UV-A and fluorescent lamp. As a result, at UV-C is high efficiency $UV_{254}$ decrease and TOC removal. In this study, the best synthetic conditions of N-doped $TiO_2$ were 5.0 M of ammonium hydroxide concentration and calcination temperature of $550^{\circ}C$. The degradation rate of humic acid as an evaluation of photoactivities of the catalysts were conducted with pH variation, decrease rate of molecular absorption, removal rate of total organic carbon and fluorescece evolution for humic acid solution. XRD and SEM were applied for analysis of surface analysis of the catalysts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.113-114
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• 2008

Conventional furnace annealing (CFA) for activating Mg-doped p-type GaN films had been performed in pure $N_2$ ambient. All sample activated the same gas ambient. The annealing process change temperature: the first process is performed at $550^{\circ}C$ for 10 min. but, the first process is the same bulk. From second to five process increase activation temperature to change $50^{\circ}C$ and annealing time keeping for 10 min. It is found that the samples characteristic measure hall measurement. Similar results were also evidenced by photoluminescence (PL) measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1404-1407
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• 2005

We have fabricated organic light-emitting diodes using poly(N-vinylcarbazole)(PVK) doped with N,N'- diphenyl-N,N'-bis(3-methylphenyl)-[l,l'-biphenyl]- 4,4/-diamine (TPD) as the hole transport layer. TPD molecules act as the trapping sites in PVK and reduce the hole mobility, which can enhance the electronhole balance in the emitting layer, resulting in the enhanced device performance. We have found the optimum ratio of TPD to PVK for the EL efficiency.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.