한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권9호
  • /
  • Pages.739-745
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  • 1998
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

평면도파로형 광증폭기 제작을 위한 $Er^+$이 첨가된 $SiO_2$ 박막 특성

The Characteristics $Er^+$ Doped $SiO_2$ Thin Film for the Fabrication of the Planar Light Waveguide Amplifier

  • 최영복 (한국통신가입자망연구소) ;
  • 문동찬 (광운대학교 전자재료공학과)
  • 발행 : 1998.09.01
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초록

The objective of this paper is to provide experimental data of Er(rare- earth)doped $SiO_2$thin film made by sputtering methods. The deposition rate of silica glass by sputtering method was 55$\AA$/min. In EDD measurements, the average Er concentration in the deposited film was 0.77(wt%). After annealing at $900^{\circ}C$, the Cl concentration decreased from 3.79(wt%) to 1.52(wt%). The refractive indices of the core $n_1$, cladding $n_2$ were 1.458, 1.558 respectively at 632.8 nm. The refractive index difference between core and cladding, $\Delta$n was 0.1. The refractive index profile of core and cladding interface shows step profile. In the study, $SiO_2$ glass films of Si wafer were successfully doped with active erbium. Therefore, this experimental data will be applicable for fabrications of Er doped planar integrated optical device.

키워드

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