Browse > Article
http://dx.doi.org/10.4313/TEEM.2011.12.5.200

Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition  

Lee, Deuk-Hee (Electronic Materials Research Center, Korea Institute of Science and Technology)
Chun, Yoon-Soo (Electronic Materials Research Center, Korea Institute of Science and Technology)
Lee, Sang-Yeol (Electronic Materials Research Center, Korea Institute of Science and Technology)
Kim, Sang-Sig (Department of Electrical Engineering and Institute for Nanoscience, Korea University)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.5, 2011 , pp. 200-203 More about this Journal
Abstract
In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.
Keywords
Nitrogen-doped zinc oxide; Dielectric barrier discharge; Pulsed laser deposition; Photoluminescence; Acceptor binding energy;
Citations & Related Records

Times Cited By SCOPUS : 1
연도 인용수 순위
  • Reference
1 K. S. Ahn, Y. Yan, S. H. Lee, T. Deutsch, J. Turner, C. E. Tracy, C. L. Perkins, and M. Al-Jassim, J. Electrochem. Soc. 154, B956 (2007) [DOI: 10.1149/1.2754074].   DOI   ScienceOn
2 R. Heitz, C. Fricke, A. Hoffmann, I. Broser, Mater. Sci. Forum, 83-87, p. 1241 (1992).   DOI
3 J. P. Zhang, L. D. Zhang, L. Q. Zhu, Y. Zhang, M. Liu, X. J. Wang, and G. He, J. Appl. Phys. 102, 114903 (2007) [DOI: 10.1063/1.2817255].   DOI   ScienceOn
4 L. Wang and N. C. Giles, J. Appl. Phys. 94, 973 (2003) [DOI: 10.1063/1.1586977].   DOI   ScienceOn
5 B. P. Zhang, N. T. Binh, Y. Segawa, Y. Kashiwaba, and K. Haga, Appl. Phys. Lett. 84, 586 (2004) [DOI: 10.1063/1.1642755].   DOI   ScienceOn
6 H. B. Ye, J. F. Kong, W. Z. Shen, J. L. Zhao, and X. M. Li, J. Phys. D: Appl. Phys. 40, 5588 (2007) [DOI: 10.1088/0022-3727/40/18/013].   DOI   ScienceOn
7 H. S. Kang, B. D. Ahn, J. H. Kim, G. H. Kim, S. H. Lim, H. W. Chang, and S. Y. Lee, Appl. Phys. Lett. 88, 202108 (2006) [DOI: 10.1063/1.2203952].   DOI   ScienceOn
8 W. Guo, A. Allenic, Y. B. Chen, X. Q. Pan, Y. Che, Z. D. Hu, and B. Liu, Appl. Phys. Lett. 90, 242108 (2007) [DOI: 10.1063/1.2747669].   DOI   ScienceOn
9 A . Zunger, Appl. Phys. Lett. 83, 57 (2003) [DOI: 10.1063/1.1584074].   DOI   ScienceOn
10 Y. Marfaing and A. Lusson, Superlattices Microstruct. 38, 385 [DOI: 10.1016/j.spmi.2005.08.036].   DOI   ScienceOn
11 D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002) [DOI: 10.1063/1.1504875].   DOI   ScienceOn
12 A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat Mater 4, 42 (2005) [DOI: 10.1038/nmat1284].   DOI   ScienceOn
13 K. Tang, S. Gu, S. Zhu, J. Liu, H. Chen, J. Ye, R. Zhang, and Y. Zheng, Appl. Phys. Lett. 95, 192106 (2009) [DOI: 10.1063/1.3262965].   DOI   ScienceOn
14 Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, Y. S. Park, and C. J. Youn, Appl. Phys. Lett. 87, 153504 (2005) [DOI: 10.1063/1.2089176].   DOI   ScienceOn
15 J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, Adv. Mater. 18, 2720 (2006) [DOI: 10.1002/adma.200502633].   DOI   ScienceOn
16 S. J. Chen, C. M. Chang, J. S. Kao, F. R. Chen, and C. H. Tsai, J. Vac. Sci. Technol. A 28, 745 (2010) [DOI: 10.1116/1.3357282].   DOI   ScienceOn
17 J. H. Leem, D. H. Lee, and S. Y. Lee, Thin Solid Films 518, 1238 (2009) [DOI: 10.1016/j.tsf.2009.07.202].   DOI   ScienceOn
18 M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. Part 2 38, L1025 (1999).   DOI
19 N. C. Saha and H. G. Tompkins, J. Appl. Phys. 72, 3072 (1992) [DOI: 10.1063/1.351465].   DOI
20 D. C. Look, Mater. Sci. Eng. B 80, 383 (2001) [DOI: 10.1016/s0921-5107(00)00604-8].   DOI
21 C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000) [DOI: 10.1103/PhysRevLett.85.1012].   DOI   ScienceOn
22 D. C. Look, G. M. R. R. H. Burgener, Ii, and J. R. Sizelove, Appl. Phys. Lett. 85, 5269 (2004) [DOI: 10.1063/1.1825615].   DOI   ScienceOn
23 A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000) [DOI: 10.1103/PhysRevB.61.15019].   DOI   ScienceOn
24 J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 83, 287 (2003) [DOI: 10.1063/1.1592621].   DOI   ScienceOn
25 K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, Appl. Phys. Lett. 83, 63 (2003) [DOI: 10.1063/1.1591064].   DOI   ScienceOn
26 L. J. Mandalapu, F. X. Xiu, Z. Yang, D. T. Zhao, and J. L. Liu, Appl. Phys. Lett. 88, 112108 (2006) [DOI: 10.1063/1.2186516].   DOI   ScienceOn
27 Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, Appl. Phys. Lett. 88, 062107 (2006) [DOI: 10.1063/1.2172743].   DOI   ScienceOn
28 C. H. Park, S. B. Zhang, and S. H. Wei, Phys. Rev. B 66, 073202 (2002) [DOI: 10.1103/PhysRevB.66.073202].   DOI   ScienceOn
29 T. M. Barnes, K. Olson, and C. A. Wolden, Appl. Phys. Lett. 86, 112112 (2005) [DOI: 10.1063/1.1884747].   DOI   ScienceOn
30 S. Limpijumnong, S. B. Zhang, S. H. Wei, and C. H. Park, Phys. Rev. Lett. 92, 155504 (2004) [DOI: 10.1103/PhysRev-Lett.92.155504].   DOI
31 S. Limpijumnong, L. Gordon, M. Miao, A. Janotti, and C. G. Van de Walle, Appl. Phys. Lett. 97, 072112 (2010) [DOI: 10.1063/1.3481069].   DOI   ScienceOn
32 H. K. Choi, J. H. Park, S. H. Jeong, and B. T. Lee, Semicond. Sci. Technol. 24, 105003 (2009) [DOI: 10.1088/0268-1242/24/10/105003].   DOI   ScienceOn
33 Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998) [DOI: 10.1063/1.121620].   DOI   ScienceOn