• Analytical Science and Technology
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• v.32 no.5
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• pp.210-216
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• 2019

Concentrations of Cu, Zn, Fe, Mn, Ni and Cr have been estimated in sediments of the Shitalakhya River at Polash-Ghorashal area, Narsingdi, Bangladesh. 36 samples of sediments from nine sampling point at different locations of Shitalakhya River were collected to determine the concentration of Cu, Zn, Fe, Mn, Ni, Cr and the samples were analyzed by atomic absorption spectrophotometer (AAS). The obtained results were compared with national and international guidelines. The levels of heavy metal concentrations in sediments were found to decrease in the order of Fe > Mn > Zn > Ni > Cu > Cr, respectively. The heavy metal concentration in sediment of Shitalakhya was below the recommended safe limits of heavy metals by WHO, FAO and other international standards. Contamination factor (CF) of Zn and Cu at sampling point Fsd2 show higher (> 1) values due to the influence of external discrete sources like wastage catalysts of ZnO and CuO. Geo-accumulation index values of the study indicate as non-contaminated to moderately contaminate.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1673-1675
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• 2000

The nonlinearity and degradation characteristics of $Pr_{6}O_{11}$-based ZnO varistors doped with, $Er_{2}O_3$ were investigated. The varistors were sintered at 1335$^{\circ}C$ in the addition range of 0.0 to 2.0 mol% $Er_{2}O_3$, respectively The varistor doped with $Er_{2}O_3$ exhibited more higher nonlinearity than that without $Er_{2}O_3$. Most of the varistors containing 0.5 mol% $Er_{2}O_3$ showed nonlinear exponent more than 70 and a excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent is -0.85% and -1.43%. respectively, even under 3rd d.c stress, such as (0.80 $V_{1mA}/90^{\circ}C$/12h)+(0.85$V_{1mA}/115^{\circ}C$/12h)+(0.90$V_{1mA}/120^{\circ}C$/12h). Consequently, since $Pr_{6}O_{11}$-based 2nO varistors doped with 0.5 mol% $Er_{2}O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the advanced varistors in future.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1114-1116
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• 1995

P/N(CuO/ZnO) Heterojunction gas sensors were made by 2-step sintering methods and its gas sensing property was measured by varying the injected gases and the operating temperatures. As the applied voltage was increased in air ambients, the current-voltage characteristics shown the ohmic properties. However, when the CO gas ambients, 500 ppm at $200^{\circ}C$, the current-voltage characteristics behaves like a rectifying diode s after 3 mins later and its conduction mechanism is discussed qualitatively for the first times.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.297-300
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• 1999

The protonation constants of the macrocyclic ligands, 1,4-dioxa-7,10,13,16-tetraaza-cyclooctadecane-N,N',N",N"'-tetra(acetic acid) [N-ac4[18]aneN402] and 1,4-dioxa-7,10,13,16-tetraazacyclooctadecane-1,4-dioxa-7,10,13,16-N,N',N",N"'-tetra(methylacetic acid) [N-meac4[18]aneN4O2] have been determined by using potentiometric method. The protonation constants of the N-ac4[18]aneN4O2 were 9.31 for logK1H, 8.94 for logK2H, 7.82 for logK3H, 4.48 for logK4H and 2.94 for logK5H. And the protonation constants of the N-meac4[18]aneN4O2 were 9.34 for logK1H, 9.13 for logK2H, 8.05 for logK3H, 5.86 for logK4H, and 3.55 for logK5H. The stability constants of complexes on the divalent transition ions (Co2+, Ni2+, Cu2+, and Zn2+) and tiivalent metal ions (Ce3+, Eu3+, Gd3+, and Yb3+) with ligands N-ac4[18]-aneN4O2 and N-meac4[18]aneN4O2 have been obtained from the potentiometric data with the aid of the BEST program. The three higher values of the protonation constants for synthesized macrocyclic ligands correspond to the protonation of nitrogen atoms, and the fourth and fifth values correspond to the protonation of the carboxylate groups for the N-ac4[18]aneN4O2 and N-meac4[18]aneN4O2. The meatal ion affinities of the two tetra-azamacrocyclic ligands with four pendant acetate donor groups or methylacetate donor groups are compared. The effects of the metal ions on the stabilities are discussed, and the trends in stability constants resulting from changing the macrocyclic ring with pendant donor groups and acidity of the metal ions.

• Corrosion Science and Technology
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• v.10 no.1
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• pp.6-12
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• 2011

The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at $800^{\circ}C$ was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure $N_{2}$ atmosphere with a dew point $-40^{\circ}C$ promoted the selective oxidation of Mn as a crystalline $Mn_{2}SiO_{4}$ phase, whereas the $N_{2}$ + 10% $H_{2}$ atmosphere with the same dew point $-40^{\circ}C$ promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the $Mn_{2}SiO_{4}$ phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure $N_{2}$ atmosphere resulted in a higher formation rate of $Fe_{2}Al_{5}$ particles at the Zn/steel interface and better galvanizability than the $N_{2}$ + 10% $H_{2}$ atmosphere.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.101-101
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• 2011

투명전도성산화물(transparent conducting oxides, TCOs) 박막으로써 널리 쓰이는 산화인듐주석(indium tin oxide, ITO)은 전기 전도성과 광 투과성이 우수하여 주로 유기발광다이오드(organic light-emitting diode, OLED)의 전극, 발광다이오드(light-emitting diode, LED)의 current spreading 층 및 태양전지(solar cell)의 윈도우층(window layer) 등의 광전자 소자로 응용되고 있으나, 고가의 indium 가격과 인체에 유해한 독성 등이 문제점으로 지적되고 있다. 따라서 indium의 함량을 저감한 새로운 조성의 TCO 또는 indium을 함유하지 않은 친환경적인 TCO 대체 재료 개발의 필요성이 증대되고 있다. 이러한 재료 중 하나인 AZO (Al-doped zinc oxide, $Al_2O_3$: 2 wt.%)는 3.82eV의 넓은 에너지 밴드갭을 가지며, 가시광선 및 근 적외선 파장 영역에 대하여 90% 이상의 높은 투과율을 나타낸다. 또한, 습식식각이 가능하며, 매우 풍부하여 원가가 매우 저렴하고, 독성이 없다. 본 연구에서는 박막 증착율이 높고, 제작과정의 조정이 용이한 RF magnetron 스퍼터를 이용하여 glass 기판 위에 AZO 박막을 성장하고, $N_2$ 분위기에서 다양한 온도 조건에서 열처리(rapid thermal annealing, RTA)하여 전기 및 광학적 특성에 대하여 비교 분석하였다. 또한, 이후에 기존의 성장방법과 달리 고가의 진공 장비를 사용하지 않고, 저온에서도 간단한 구조의 장비를 이용하여 균일한 나노구조를 성장시킬 수 있는 전기화학증착법(electrochemical deposition)으로 AZO 박막위에 ZnO 나노로드를 다양한 성장조건에 따라 성장시켜 광학적 특성을 비교 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.