• Title/Summary/Keyword: multiple gate

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A Class E Power Oscillator for 6.78-MHz Wireless Power Transfer System

  • Yang, Jong-Ryul
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.220-225
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    • 2018
  • A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

Generalized Selective Harmonic Elimination Modulation for Transistor-Clamped H-Bridge Multilevel Inverter

  • Halim, Wahidah Abd.;Rahim, Nasrudin Abd.;Azri, Maaspaliza
    • Journal of Power Electronics
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    • v.15 no.4
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    • pp.964-973
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    • 2015
  • This paper presents a simple approach for the selective harmonic elimination (SHE) of multilevel inverter based on the transistor-clamped H-bridge (TCHB) family. The SHE modulation is derived from the sinusoidal voltage-angle equal criteria corresponding to the optimized switching angles. The switching angles are computed offline by solving transcendental non-linear equations characterizing the harmonic contents using the Newton-Raphson method to produce an optimum stepped output. Simulation and experimental tests are conducted for verification of the analytical solutions. An Altera DE2 field-programmable gate array (FPGA) board is used as the digital controller device in order to verify the proposed SHE modulation in real-time applications. An analysis of the voltage total harmonic distortion (THD) has been obtained for multiple output voltage cases. In terms of the THD, the results showed that the higher the number of output levels, the lower the THD due to an increase number of harmonic orders being eliminated.

Implementation of Real-Time Data Logging System for Radar Algorithm Analysis (레이다 알고리즘 분석을 위한 실시간 로깅 시스템 구현)

  • Jin, YoungSeok;Hyun, Eugin
    • IEMEK Journal of Embedded Systems and Applications
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    • v.16 no.6
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    • pp.253-258
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    • 2021
  • In this paper, we developed a hardware and software platform of the real-time data logging system to verify radar FEM (Front-end Module) and signal-processing algorithms. We developed a hardware platform based on FPGA (Field Programmable Gate Array) and DSP (Digital Signal Processor) and implemented firmware software to verify the various FEMs. Moreover, we designed PC based software platform to control radar logging parameters and save radar data. The developed platform was verified using 24 GHz multiple channel FMCW (Frequency Modulated Continuous Wave) in an environment of stationary and moving targets of chamber room.

A $3{\mu}m$ Standard Cell Library Implemented in Single Poly Double Metal CMOS Technology ($3{\mu}m$ 설계 칫수의 이중금속 CMOS 기술을 이용한 표준셀 라이브러리)

  • Park, Jon Hoon;Park, Chun Seon;Kim, Bong Yul;Lee, Moon Key
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.2
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    • pp.254-259
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    • 1987
  • This paper describes the CMOS standard cell library implemented in double metal single poly gate process with 3\ulcornerm design rule, and its results of testing. This standard cell library contains total 33 cells of random logic gates, flip-flop gates and input/output buffers. All of cell was made to have the equal height of 98\ulcornerm, and width in multiple constant grid of 9 \ulcornerm. For cell data base, the electric characteristics of each cell is investigated and delay is characterized in terms of fanout. As the testing results of Ring Oscillator among the cell library, the average delay time for Inverter is 1.05 (ns), and the delay time due to channel routing metal is 0.65(ps)per unit length.

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Study on Multiple sparse matrix-matrix multiplication hardware accelerator (다중 희소 행렬-행렬 곱셈 하드웨어 가속기 연구)

  • Tae-Hyoung Kim;Yeong-Pil Cho
    • Annual Conference of KIPS
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    • 2024.05a
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    • pp.47-50
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    • 2024
  • 희소 행렬은 대부분의 요소가 0 인 행렬이다. 이러한 희소 행렬-행렬 곱셈을 수행할 경우 0 인 데이터 또한 곱셈을 수행하니 불필요한 연산이 발생한다. 이러한 문제를 해결하고자 행렬 압축 알고리즘 또는 곱셈의 부분합의 수를 줄이는 연구들이 활발히 진행 중이다. 하지만 현재의 연구들은 주로 단일 행렬 연산에 집중되어 있어 FPGA(Field Programmable Gate Array)와 특정 용도로 사용하는 가속기에서는 리소스를 충분히 활용하지 못해 비효율적이다. 본 연구는 FPGA 의 모든 리소스를 사용하여 다중 희소 행렬 곱셈을 수행하는 아키텍처를 제안한다.

A Design of Current-mode Buck-Boost Converter using Multiple Switch with ESD Protection Devices (ESD 보호 소자를 탑재한 다중 스위치 전류모드 Buck-Boost Converter)

  • Kim, Kyung-Hwan;Lee, Byung-Suk;Kim, Dong-Su;Park, Won-Suk;Jung, Jun-Mo
    • Journal of IKEEE
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    • v.15 no.4
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    • pp.330-338
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    • 2011
  • In this paper, a current-mode buck-boost converter using Multiple switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.5MHz oscillation frequency, and maximum efficiency 90%. Moreover, this paper proposes watchdog circuits in order to ensure the reliability and to improve the performance of dc-dc converters. An electrostatic discharge(ESD) protection circuit for deep submicron CMOS technology is presented. The proposed circuit has low triggering voltage using gate-substrate biasing techniques. Simulated result shows that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS(8.2V).

An Analysis on the Emission Reduction Effect of Diesel Light-duty Truck by Introducing Electronic Toll Collection System on Highways (고속도로 영업소의 자동 요금 징수 시스템 도입에 따른 소형 경유 화물트럭의 배출가스 저감 효과 분석)

  • Park, Junhong;Lee, Jongtae;Lee, Taewoo;Kim, Jiyoung;Kim, Jeongsoo;Kil, Jihoon
    • Journal of Korean Society for Atmospheric Environment
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    • v.28 no.5
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    • pp.506-517
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    • 2012
  • Electronic Toll Collection System (ETCS), so called "Hi-Pass" in Korea, has improved traffic flow at toll gate of highways. It is known that the improvement of traffic flow should reduce air pollutants and $CO_2$ from vehicles. In this study, real driving emission of a light duty truck with Portable Emission Measurement System(PEMS) has been measured to evaluate the emission reduction effect due to ETCS. The correlations between driving variables and emissions have been analyzed to verify its effect on traffic flow improvement and emission reduction at toll gate. We considered average vehicle speed, Relative Positive Acceleration (RPA), and the distance of queue as driving variables. Compared to passing Manual Toll Collection System (MTCS) lane without queue, ETCS was able to reduce 38.7% of $NO_x$, 21.6% of soot, and 27.7% of $CO_2$. The results showed that the higher the average vehicle speed, the lower RPA and no queue in ETCS contributed to the emission reductions. Linear equation models with RPA and queue have been established by the multiple linear regression method. The linear models resulted in the higher coefficient of determination than those with only average vehicle speed used for establishing vehicle emission factors.

Design and Implementation of a Fault Simulation System for Mixed-level Combinational Logic Circuits (혼합형 조합 회로용 고장 시뮬레이션 시스템의 설계 및 구현)

  • Park, Yeong-Ho;Son, Jin-U;Park, Eun-Se
    • The Transactions of the Korea Information Processing Society
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    • v.4 no.1
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    • pp.311-323
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    • 1997
  • This paper presents a fast fault simulation system for detecting stuck-at faults in mixed-level combinational logic circuits with gale level and switch -level primitives. For a practical fault simulator, the types are not restricted to static switch-level and/or gate-level circuits, but include dynamic switch-level circuits. To efficiently handle the multiple signal contention problems at wired logic elements, we propose a six-valued logic system and its logic calculus which are used together with signal strength information. As a basic algorithm for the fault simulation process, a well -known gate-level parallel pattern single fault propagation(PPSFP) technique is extended to switch-level circuits in order to handle pass-transistor circuits and precharged logic circuits as well as static CMOS circuits. Finally, we demonstrate the efficiency of our system through the experimental results for switch-level ISCAS85 benchmark combinational circuits and various industrial mixed-level circuits.

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A Study on Hopper Design for Minimizing the Wrapage Deformation at Injection Molding Processes (사출공정에서 휨 변형을 최소로 하는 호퍼 설계 연구)

  • Kim, Young-Suk;Lee, Eui-Joo;Son, Jae-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.1
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    • pp.35-42
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    • 2015
  • Injection molding is a high efficient manufacturing technology for producing plastic parts. On the other hand, the warpage of molded plastic parts is an ubiquitous problem in the injection molding process. The main objective of this study was to minimize the amount of warpage occurring in the injection molding process of a hopper of ATDPS made of crystalline polymer (PP) instead of amorphous polymer (ABS). The moldflow CAE simulation was conducted for the molding process of the hopper to clarify the injection moldability, shear rate, shear stress, warpage by changing the gate shape and the number of ribs installed on the top of the hopper flange. The wide gate shape of runner system and multiple rib installation were found to be useful for minimizing the warpage of the hopper. The validity of the CAE simulations was supported by the injection molding experiment for the optimized design case.

Characterization and Comparison of Doping Concentration in Field Ring Area for Commercial Vertical MOSFET on 8" Si Wafer (8인치 Si Power MOSFET Field Ring 영역의 도핑농도 변화에 따른 전기적 특성 비교에 관한 연구)

  • Kim, Gwon Je;Kang, Ye Hwan;Kwon, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.4
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    • pp.271-274
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    • 2013
  • Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.