• Journal of Environmental Health Sciences
• /
• v.40 no.2
• /
• pp.105-113
• /
• 2014

Objectives: It is necessary to apply quantitative structure activity relationship (QSAR) for the various chemicals with insufficient toxicity data that are used in the workplace, based on the precautionary principle. This study aims to find application plan of QSAR software tool for predicting health hazards such as genetic toxicity, and carcinogenicity for some chemicals used in the electronics industries. Methods: Toxicity prediction of 21 chemicals such as 5-aminotetrazole, ethyl lactate, digallium trioxide, etc. used in electronics industries was assessed by Toxicity Prediction by Komputer Assisted Technology (TOPKAT). In order to identify the suitability and reliability of carcinogenicity prediction, 25 chemicals such as 4-aminobiphenyl, ethylene oxide, etc. which are classified as Group 1 carcinogens by the International Agency for Research on Cancer (IARC) were selected. Results: Among 21 chemicals, we obtained prediction results for 5 carcinogens, 8 non-carcinogens and 8 unpredictability chemicals. On the other hand, the carcinogenic potential of 5 carcinogens was found to be low by relevant research testing data and Oncologic TM tool. Seven of the 25 carcinogens (IARC Group 1) were wrongly predicted as non-carcinogens (false negative rate: 36.8%). We confirmed that the prediction error could be improved by combining genetic toxicity information such as mutagenicity. Conclusions: Some compounds, including inorganic chemicals and polymers, were still limited for applying toxicity prediction program. Carcinogenicity prediction may be further improved by conducting cross-validation of various toxicity prediction programs, or application of the theoretical molecular descriptors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.309-310
• /
• 2005

In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.2
• /
• pp.189-194
• /
• 2002

Two-photon resonant third photon ionization of atomic bromine $(4p^5\;^2P_{3/2}\;and\;^2P_{1/2})$ has been studied using a photoelectron imaging spectroscopy in the wavelength region 250 - 278 nm. The technique has yielded simultaneously both relative branching ratios to the three levels of $Br^+(^3P_2,\;^3P_{0.1}\;and^1D_2)$ with $4p^4$ configuration and the angular distributions of outgoing photoelectrons. The product branching ratios reveal a strong propensity to populate particular levels in many cases. Several pathways have been documented for selective formation of $Br^+(^3P_2)$ and $Br^+(^3P_{0.1})$ ions. In general, the final ion level distributions are dominated by the preservation of the ion core configuration of a resonant excited state. Some deviations from this simple picture are discussed in terms of the configuration interaction of resonant states and the autoionization in the continuum. The photoelectron angular distributions are qualitatively similar for all transitions, with a positive $A_2$ anisotropy coefficient of 1.0-2.0 and negligible $A_4$ in most cases, which suggests that the angular distribution is mainly determined by the single-photon ionization process of a resonant excited state induced from the third photon absorption.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.7
• /
• pp.29-35
• /
• 2000

The relationship between calculated hydrogen molecular concentration in fiber core and measured index change during the grating growth is analyzed. The index change increases by ${\sim}2{\times}10^{-5}$ per 100ppm of $H_2$ concentration in standard telecommunication optical fiber and the defects related photosensitivity generate ${\sim}3.8{\times}10^{17}$ per 100ppm of $H_2$.

• Journal of Sensor Science and Technology
• /
• v.14 no.3
• /
• pp.137-143
• /
• 2005

Research in the field of biosensor has enormously increased over the recent years. The metal-oxide semiconductor field effect transistor (MOSFET) type protein sensor offers a lot of potential advantages such as small size and weight, the possibility of automatic packaging at wafer level, on-chip integration of biosensor arrays, and the label-free molecular detection. We fabricated MOSFET protein sensor and proposed the gold-black electrode as the gate metal to improve the response. The experimental results showed that the output voltage of MOSFET protein sensor was varied by concentration of albumin proteins and the gold-black gate increased the response up to maximum 13 % because it has the larger surface area than that of planar-gold gate. It means that the expanded gate allows a larger number of ligands on same area, and makes the more albumin proteins adsorbed on gate receptor.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.7
• /
• pp.9-16
• /
• 1999

We have investigated effects of local damage accumulation for ultra-low energy As and B ion implant using highly efficient molecular dynamics(MD) scheme. We simulated ion implantation by MD simulation using recoil ion approximation (RIA) method and local cell damage accumulation (LCDA) model proposed in the paper. Local damage accumulation probability function consisted of deposited energy in a unit cell, implant dose rate, target material, projectile atom, and recoil event number. The simulated results were good agreement with the experimental and other simulated results. The MDRANGE results without damage accumulation were different from SIMS data in the tail region. We also simulated 2 dimensional dopant and damage profiles using the local damage accumulation model and recoil ion approximation method.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.8
• /
• pp.1-8
• /
• 2000

We have achieved a high aspect ratio track-following microactuator (TFMA) which is capable of driving 0.3 ${\mu}m$ magnetic head for hard disk drive (HDD). it was fabricated on silicon on insulator (SOI) wafer with 20 ${\mu}m$ trick active silicon and 2 ${\mu}m$ thick thermally grown oxide and piggyback electrostatic principle was used for driving TFMA. The first vibration mode frequency of TFMA was 18.5 kHz which is enough for a recording density of higher than 10 Gb/in$^2$. Its displacement was 1.4 ${\mu}m$ when 15 V dc bias plus 15 V ac sinusoidal driving input was applied and its electrostatic force was 50 N. The fabricated actuator shows 7.51 dB of gain margin and 50.98$^{\circ}$ of phase margin for 2.21 kHz servo-bandwidth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.245.2-245.2
• /
• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.12
• /
• pp.12-17
• /
• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel(PDP) were investigated and analyzed. Mgo films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure, were inspected using XRD(X-ray diffractometry), AFM(atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary, electron emission coefficient $(\gamma)$ was obtained at the evaporation rate of $5\AA/sec$. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5\AA/sec$. In the MgO film deposited at $5\AA/sec$, the (200) orientation and $F^+$ center were most intensive. The XRD results and cathode-luminescence(CL) spectra show the $\gamma$ values are correlated with $F/F^+$ centers of the molecular structure of MgO films.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.6 s.348
• /
• pp.18-22
• /
• 2006

The inspection of surface properties under n-octadecyltrichlorosilane treated $SiO_2$ film was carried out by current-voltage characteristic and the scanning electron microscope. The voltage at zero current in low electric field is the lowest at 0.3 % OTS treated $SiO_2$ film with hybrid type. $SiO_2$ films changed from inorganic to hybrid or organic properties according to the increase of OTS content. OTS treated $SiO_2$ films with hybrid properties decreased the leakage currents, and the grain size of pentacene deposited sample was also the most small at the hybrid properties. The perpendicular generation of pentacene molecular was related with the surface of insulators. The surface with hybrid properties decreased the grain size, but that with inorganic or organic properties increased the grain size.