• 한국진공학회지
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• 제13권4호
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• pp.145-149
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• 2004

RF magnetron sputtering 방법으로 miscut된 기판을 이용해서 양질의 압전 산화물 에피 박막을 제작하였다. 박막은 (001) $SrTiO_3$ 기판 위에 증착되었으며, (100) 방향으로 $0^{\circ}$-$8^{\circ}$의 miscut 각도를 갖는 기판들을 사용했다. $4^{\circ}$이상의 큰 miscut 각도를 갖는 기판 위에 성장된 박막의 경우, x-ray diffraction (XRD) 패턴은 perovskite 상의 순수한 PMN-PT 피크만을 보여 주었으며, wavelength dispersive x-ray fluorescence spectroscopy를 이용해서 분석한 조성비는 stoichiometric한 조성비에 가까운 값을 보여주었다. 반면에, miscut 각도가 없는 기판 위에 증착된 박막의 경우, 2차상인 pyrochlore 상을 포함하는 XRD 패턴을 보여주었다. $8^{\circ}$ 기판 위에 성장된 박막의 경우 실온에서 20$\mu$C/$\textrm{cm}^2$라는 높은 잔류분극 값을 보여주었다

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1999년도 춘계연구발표회 논문개요집
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• pp.38-39
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• 1999

• Progress in Superconductivity
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• 제9권1호
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• pp.115-118
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• 2007

This study investigated the effects of different kinds of seed crystals with miscut angles and pretreatment on the characteristics of a RE-123 superconductor processed by a top-seeded melt-growth (TSMG) method. When the seed crystal was heat-treated in an oxygen atmosphere, the surface structure was cleaned removing hydroxide. When the seed crystal had a miscut angle, in addition, the surface structure showed a well defined hill-and-valley structure after heat-treatment. A better microstructure, with a well-distributed small RE-123 phase, was obtained using a high miscut angle after heat-treatment in an oxygen atmosphere. As a result of the microstructure improvement, the magnetic characteristics also improved. The experimental result can be explained by reduction of nucleation activation energy.

• Journal of Magnetics
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• 제21권2호
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• pp.168-172
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• 2016

$BiMnO_3$ has been a promising candidate as a magnetoelectric multiferroic while there have been many controversial reports on its ferroelectricity. The detailed analysis of its film growth, especially the growth of thin film having monoclinic symmetry has not been reported. We studied the effect of miscut angle, the substrate surface, and film thickness on the symmetry of $BiMnO_3$ thin film. A flat $SrTiO_3$ (110) substrate resulted in a thin film with three domains of $BiMnO_3$ and 1 degree miscut in the $SrTiO_3$ (110) substrate resulted in dominant domain preference in the $BiMnO_3$ thin film. The larger miscut resulted in a nearly perfect detwinned $BiMnO_3$ film with a monoclinic phase. This strong power of domain selection due to the step edge of the substrate was efficient even for the thicker film which showed a rather relaxed growth behavior along the $SrTiO_3$ [1-10] direction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.59-62
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• 2003

This study investigated the phase transformation of the $REBa_2Cu_3O_{7-x}$ (RE=Nd, Gd, By) superconductor, and CCT (Continuous-Cooling-Transformation) along with the TTT (Time-Temperature-Transformation) diagrams are suggested according to the isothermal and continuous cooling heat-treatments. According to result of fabricated single crystal of RE-123 superconductor through TSMG method based on phase transformation neted among heat treatment process, when the ionic radius elements was decreased, RE-211 phase was well-distributed. According to result that examine about seed of pretreatment effect of TSMG method, magnetic hysteresis improved when preprocess among oxygen atmosphere in same seed. and used after. Effect of miscut expressed good superconducting special quality in case miscut uses big seed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.300-300
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• 2011

Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by $10.5^{\circ}$ of miscut angle toward [100]. Adsorption energys of step edge and flat terrace were calculated to compare the oxidation reaction at step edge and flat terrace on Si surface.

• 한국진공학회지
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• 제8권4B호
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• pp.519-523
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• 1999

Epitaxial thickness $t_e(T_s)$ of Si films grown at the substrate temperature $T_s$=80~30$0^{\circ}C$ by ultra-high vacuum ion-beam sputter deposition onto nominally-singular, [100]-miscut Si(001) was measured. $t_e(T_s)$ values of films grown on vicinal Si(001) substrates were decreases compared to those of films grown on nominally-singular Si(001). Evolution of surface roughness measured by atomic force microscopy of films grown at $300^{\circ}C$ showed that the increases step density in vicinal substrates increases the tendency toward unstable growth resulting in larger surface roughness, which in turn decreases te.

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.16-20
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• 2015

We investigated optical properties of an electron-doped copper oxide high temperature superconductor, $Pr_{0.85}LaCe_{0.15}CuO_4$ (PLCCO) single crystal. We obtained the optical conductivity from measured reflectance at various temperatures. We found our data contained c-axis longitudinal optical (LO) phonon modes due to miscut and intrinsic lattice distortion. We applied an extended Drude model to study the correlations between charge carriers in the system. The LO phonons appear as strong sharp peaks in the optical scattering rate. We tried to remove the LO phonon modes by using the energy loss function, which also shows the LO phonons as peaks, and could not remove them completely. We extracted the electron-boson spectral density function using a generalized Allen's formula. We observed that the resulting electron-boson density show similar temperature dependence as hole-doped cuprates.

• 한국진공학회지
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• 제16권6호
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• pp.479-482
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• 2007

수소화물 기상 증착법을 이용하여 [0001] 방향에서 $0.3^{\circ}$ 기울어진 사파이어 기판 위에 InN 나노 알갱이를 성장 시켰고, 다양한 성장 조건에 따라 InN 나노 알갱이의 성장이 어떻게 영향 받는지 x-선 산란을 이용하여 연구 하였다. 모든 시료는 암모니아 사전 처리 작업을 한 사파이어 기판 위에 증착하였다. 염화수소 유량, 성장온도, 소스 영역온도에 따라 InN 나노 알갱이의 성장이 영향을 받음을 알 수 있었으며, 갈륨과 인듐을 혼합한 소스를 사용하였음에도 불구하고, 성장 조건에 따라 InN가 성장되지 않는 경우가 있었으며, 이 때는 특히 (001) 방향의 GaN 이외에 (100)및 (101) 방향의 GaN 나노알갱이들이 급격히 많이 생성됨을 확인하였다.