Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.02a
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- Pages.300-300
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- 2011
Initial oxidation process on viinal Si(001) surface: ReaxFF based on molecular dynamics simulation
- Yun, Gyeong-Han ;
- Lee, Eung-Gwan ;
- Choe, Hui-Chae ;
- Hwang, Yu-Bin ;
- Yun, Geun-Seop ;
- Kim, Byeong-Hyeon ;
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Jeong, Yong-Jae
- 윤경한 (한양대학교 신소재공학과) ;
- 이응관 (한양대학교 신소재공학과) ;
- 최희채 (한양대학교 신소재공학과) ;
- 황유빈 (한양대학교 신소재공학과) ;
- 윤근섭 (한양대학교 신소재공학과) ;
- 김병현 (한양대학교 신소재공학과) ;
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정용재
(한양대학교 신소재공학과)
- Published : 2011.02.09
Abstract
Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by