• Advances in environmental research
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• v.3 no.1
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• pp.87-106
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• 2014

The concern for the global environment ensues researchers from various disciplines to work in collaboration to tackle with the issues of sustainability and environmental conservation for well-being of the people. In this study, we have selected and focused on few basic environment-effecting factors such as temperature, humidity, carbon dioxide and oxygen concentration level and referred them as meteorological data. In this paper, we present the development of our own customized hardware setup, environmental monitoring device (EMD) to obtain the data. Utilizing the relationship among these basic parameters, represented in the form of formulas and equations, we tried to encode them using Matlab programming. Data visualization is achieved by plotting the graphs of basic parameters obtained from EMD as well for the derivatives using Matlab programs.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.283-288
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• 2008

A post-linearization technique for the differrential CMOS LNA is presented. The proposed method uses an additional cross-coupled common-source FET pair to cancel out the third-order intermodulation ($IM_3$) current of the main differential amplifier. This technique is applied to enhance the linearity of CMOS LNA using $0.18-{\mu}m$ technology. The LNA achieved +10.2 dBm IIP3 with 13.7 dB gain and 1.68 dB NF at 2 GHz consuming 11.8 mA from a 1.8-V supply. It shows IIP3 improvement by 6.6 dB over the conventional cascode LNA without the linearizing circuit.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.43-49
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• 2006

The properties, behavior and reliability of the residual void in blind via hole(BVH) were carried out for the shape of BVH using the void extraction process. The residual void was perfectly removed in the specimens applied by the void extraction process, which was improved by 40% rather than the conventional process. The residual void in BVH was to be eliminated under a condition of 1.5 atm for more 30 sec with regardless of the shape of BVH. It was also observed that the residual void in BVH was not formed after the reliability test with JEDEC standard.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.6-6
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• 1994

• The Magazine of the IEIE
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• v.17 no.1
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• pp.11-23
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• 1990

• Polymer Science and Technology
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• v.21 no.3
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• pp.228-235
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• 2010

• Journal of the Korean Vacuum Society
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• v.4 no.1
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• pp.60-66
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• 1995

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.3-17
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• 2002

• Journal of the Microelectronics and Packaging Society
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• v.1 no.2
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• pp.135-142
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• 1994