• Advances in environmental research
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• 제3권1호
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• pp.87-106
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• 2014

The concern for the global environment ensues researchers from various disciplines to work in collaboration to tackle with the issues of sustainability and environmental conservation for well-being of the people. In this study, we have selected and focused on few basic environment-effecting factors such as temperature, humidity, carbon dioxide and oxygen concentration level and referred them as meteorological data. In this paper, we present the development of our own customized hardware setup, environmental monitoring device (EMD) to obtain the data. Utilizing the relationship among these basic parameters, represented in the form of formulas and equations, we tried to encode them using Matlab programming. Data visualization is achieved by plotting the graphs of basic parameters obtained from EMD as well for the derivatives using Matlab programs.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.283-288
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• 2008

A post-linearization technique for the differrential CMOS LNA is presented. The proposed method uses an additional cross-coupled common-source FET pair to cancel out the third-order intermodulation ($IM_3$) current of the main differential amplifier. This technique is applied to enhance the linearity of CMOS LNA using $0.18-{\mu}m$ technology. The LNA achieved +10.2 dBm IIP3 with 13.7 dB gain and 1.68 dB NF at 2 GHz consuming 11.8 mA from a 1.8-V supply. It shows IIP3 improvement by 6.6 dB over the conventional cascode LNA without the linearizing circuit.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.43-49
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• 2006

새로운 잔류 기공 추출 공정을 적용하여 Blind via hole(BVH)의 형상에 따라 발생되는 잔류기공 특성, 거동 및 신뢰성평가를 수행하였다. 잔류 기공 추출 공정을 적용한 시편에서는 잔류기공이 완전히 제거 되었으며, 기존 공정으로 제조된 시편에 비하여 40% 수준의 향상된 결과를 나타내었다. BVH의 형상에 관계없이 1.5기압수준으로 약 30초 이상 동안 추출하면 BVH내부의 잔류기공은 제거 되어지며 JEDEC 기준의 신뢰성으로 평가한 결과 BVH내부에 잔류기공은 존재하지 않았다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.6-6
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• 1994

• 전자공학회지
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• 제17권1호
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• pp.11-23
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• 1990

• 한국고분자학회지:고분자과학과기술
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• 제21권3호
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• pp.228-235
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• 2010

• 한국진공학회지
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• 제4권1호
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• pp.60-66
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• 1995

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 International Symposium
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• pp.3-17
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• 2002

• 마이크로전자및패키징학회지
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• 제1권2호
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• pp.135-142
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• 1994