• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 광학 및 양자전자학 워크샵
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• pp.109-114
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• 1991

좋은(sub=micron) 분해능을 갖는 Photoresist film의 방법에 의한 Micro-Lithography의 발달은 반도체, Electro-Optic 등의 첨단산업에 큰 기여를 하였다. 본 내용은 이러한 PR을 이용한 Lithography System의 광학적인 원리에 대해 소개하고자 한다.

• 한국산학기술학회논문지
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• 제18권5호
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• pp.674-680
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• 2017

본 논문은 현재 개인 휴대기기 및 대형 디스플레이 장비의 제어에서 폭넓게 사용되고 있는 터치스크린 패널 (TSP; Touch Screen Panel)의 정상 작동 유무를 확인하기 위한 micro bump 제작 기술에 관한 연구이다. 터치스크린 패널은 감압식, 정전식 등의 여러 가지 방식이 있으나 지금은 편리성에 의하여 정전식 방식이 주도하고 있다. 정전식의 경우 해당하는 좌표의 접촉에 따라 전기적 신호가 변화하게 되고, 이를 통하여 접촉 위치를 확인할 수 있으며 따라서 접촉 위치에 따른 전기 특성 검사가 필수적이다. 검사공정에서 TSP의 모델이 변경됨에 따라 새로운 micro bump를 제작이 및 검사 프로그램의 수정이 필수적이다. 본 논문에서는 새로운 micro bump 제작 시 mask를 사용하지 않아 보다 경제적이며 변화에 대응이 유연한 maskless lithography 시스템을 이용하여 micro bump 제작 가능성에 대하여 확인하였다. 이를 위하여 제작되는 bump의 pitch에 따른 전기장 간섭 시뮬레이션을 진행하였으며, maskless lithogrphy 공정을 적용하기 위한 패턴 이미지를 생성하였다. 이후 MEMS 기술에 해당하는 PR(Photo Resist) 패터닝 공정에서 노광(Lithography) 공정 및 현상(Developing) 공정을 통하여 PR 마스크를 제작한 후 electro-plating 공정을 통하여 micro bump를 제작하였다.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.682-688
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• 2009

A periodic away of zinc oxide(ZnO) micro-rods as fabricated by using chemical bath deposition and photo-lithography. Vertically aligned ZnO micro-rods array was successfully grown by chemical bath deposition method on ZnO seed layer. The ZnO seed layer was deposited on glass and the patterning was made by standard photo-lithography technique. The selective growth of ZnO micro-rods as achieved with the masked ZnO seed layer. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO seed layer.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.17-21
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• 2010

Currently miniaturized electron-optical columns find their way into electron beam lithography systems. For better lithography process, it is required to make smaller spot size and longer working distance. But, the micro-columns of the multi-beam lithography system suffer from chromatic and spherical aberration, even when the electron beam is exactly on the symmetric axis of the micro-column. The off-axis error of the electron emitting source is expected to become worse with increasing off-axis distance of the focusing spot. Especially the electron beams far from the system optical axis have a non-negligible asymmetric intensity distribution in the micro-column. In this paper, the effect of the off-axis e-beam source is analyzed. To analyze this effect is to introduce a micro-column model of which the e-beam emitting source is aligned with the center of the electron beam by shifting them perpendicular to the system optical axis. The presented solution can be used to analysis the performance of the multi-electron-beam system. The performance parameters, such as the working distances and the focusing position are obtained by the computational simulations as a function of the off-axis distance of the emitting source.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.871-876
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• 2014

Efficiency of crystalline Si solar cell can be maximized as minimizing optical loss through antireflection texturing with inverted pyramids. Even if cost-competitive, soft lithography can be employed instead of photolithography for the purpose, some limitations still remain to apply the soft lithography directly to as-received solar grade wafer with a bunch of micro trenches on surface. Therefore, it is needed to develop a low-cost, effective planarization process and evaluate its output to be applicable to patterning process with PDMS stamp. In this study new surface planarization process is proposed and the change of micro scale trenches on the surface as a function of etching time is observed. Also, the effect of trenches on pattern quality by soft lithography is investigated using FEM structural analysis. In conclusion it is clear that the geometry and shape of trenches would be basic considerations for soft lithography application to low quality wafer.

• 한국재료학회지
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• 제23권8호
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• pp.447-452
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• 2013

Recently, products that a have 3-dimensional(3D) micro structure have been in wide use. To fabricate these 3D micro structures, several methods, such as stereo lithography, reflow process, and diffuser lithography, have been used. However, these methods are either very complicated, have limitations in terms of patterns dimensions or need expensive components. To overcome these limitations, we fabricated various 3D micro structures in one step using a pair of diffusers that diffract the incident beam of UV light at wide angles. In the experiment, we used positive photoresist to coat the Si substrate. A pair of diffusers(ground glass diffuser, opal glass diffuser) with Gaussian and Lambertian scattering was placed above the photomask in the passage of UV light in the photolithography equipment. The incident rays of UV light diffracted twice at wider angles while passing through the diffusers. After exposure, the photoresist was developed fabricating the desired 3D micro structure. These micro structures were analyzed using FE-SEM and 3D-profiler data. As a result, this dual diffuser lithography(DDL) technique enabled us to fabricate various microstructures with different dimensions by just changing the combination of diffusers, making this technology an efficient alternative to other complex techniques.

• 한국산학기술학회논문지
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• 제5권2호
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• pp.186-190
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• 2004

Nano size 몰드의 제작은 X-ray lithography 방법을 이용하여 몰드를 제작하고, micro size의 경우 Deep UV lithography 방법을 이용하여 몰드를 제작하고 있다. 본 연구에서는 SLS(Selective Laser Sintering)형 RP(Rapid Prototyping System)을 이용하여 미세구조 몰드를 제작하였으며, 패턴의 깊이는 400 ㎛까지 구현하였다. 제작된 몰드의 강도와 내열성을 높이기 위하여 전해도금을 이용하여 몰드의 표면에 Ni를 300 ㎛생성 시켰다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.633-634
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.777-778
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• 2011

• 한국정밀공학회지
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• 제19권7호
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• pp.59-64
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• 2002

Laser lithography technique is useful for fabricating micro-patterns of silicon wafers. In this work, the laser lithography micromachining technique is optimized based on Taguchi method. Sensitivity analysis was performed using laser scanning speed, laser power level, developing time and mixture ratio between developer and Di-water as the parameters. The results show that for the photoresist used in this work, 70${\mu}m$/s scan speed, 50㎽ laser power, 60sec. developing time and 6: 1 mixture ratio gives the best result. This work shows the effectiveness of laser lithography technique in fabricating patterns with a flew micrometer in width.