• Korean Chemical Engineering Research
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• v.44 no.1
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• pp.1-9
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• 2006

Biodevices composed of biomolecular layer by mimicking the natural functions of cells and the interaction mechanisms of the constituted biomolecules have been developed in various industrial fields such as medical diagnosis, drug screening, electronic device, bioprocess, and environmental pollution detection. To construct biodevices such as bioelectronic devices (biomolecular diode, bio-information storage device and bioelectroluminescence device), protein chip, DNA chip, and cell chip, biomolecules including DNA, protein, and cells have been used. Fusion technology consisting of immobilization technology of biomolecules, micro/nano-scale patterning, detection technology, and MEMs technology has been used to construct the biodevices. Recently, nanotechnology has been applied to construct nano-biodevices. In this paper, the current technology status of biodevice including its fabrication technology and applications is described and the future development direction is proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.41-46
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• 2009

The fit between dental implant fixture and zirconia abutment is affected by many variables during the fabrication process by CAD/CAM program and milling working. The purpose of this study was to evaluate the surface compatibility and electrochemical behaviors of zirconia abutment for prosthodontics. Zirconia abutments were prepared and fabricated using zirconia block and milling machine. For stabilization of zirconia abutments, sintering was carried out at $1500^{\circ}F$ for 7 hrs. The specimens were cut and polished for gap observation. The gap between dental implant fixture and zirconia abutment was observed using field-emission scanning electron microscopy (FE-SEM). The hardness and corrosion resistance of zirconia abutments were observed with vickers hardness tester and potentiostat. The gap between dental implant fixture and zirconia abutment was $5{\sim}12{\mu}m$ for small gap, and $40{\sim}60{\mu}m$ for large gap. The hardness of zirconia surface was 1275.5 Hv and showed micro-machined scratch on the surface. The corrosion potentials of zirconia abutment/fixture was .290 mV and metal abutment/fixture was .280 mV, whereas $|E_{pit}-E_{corr}|$ of zirconia abutment/fixture (172 mV) was higher than that of metal abutment/fixture (150 mV). The corrosion morphology of metal abutment/fixture showed the many pit on the surface in compared with zirconia abutment/fixture.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.2
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• pp.146-153
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• 2008

Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.54-59
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• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1292-1299
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• 2003

In this paper, we fabricated new GaAs-based dielectric-supported air gapped microstriplines(DAMLs) using the surface MEMS and the LPF for Ka-band using the fabricated DAMLs. We elevated the signal lines from the substrate, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency band with wide impedance range. We fabricated LPF with DAMLs for Ka-band. Due to reducing the dielectric loss of DAMLs, the insertion loss of LPF can be reduced. Miniature is essential to integrate LPF with active devices, so that we fabricated LPF with the slot on the ground to reduce the size of the LPF. We compared a characteristic to LPF with the slot and LPF without the slot.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.569-573
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• 2014

We demonstrate a low-cost, superbly efficient way of etching for the nano-, and micro-sized pyramid patterns on (100)-oriented Si wafer surfaces for use as a patterned master. We show a way of producing functional optical films for the viewing angle direction brightness-enhancement of Lambertian LED (light emitting diode)/OLED (organic light emitting diode) planar lighting applications. An optimally formulated KOH (Potassium hydroxide) wet etching process enabled random-positioned, and random size-distributed (within a certain size range) pyramid patterns to be developed over the entire (100) silicon wafer substrates up to 8" and a simple replication process of master patterns onto the PC (poly-carbonate) and PMMA (poly-methyl methacrylate) films were performed. Haze ratio values were measured for several film samples exhibiting excellent values over 90% suitable for LED/OLED lighting purposes. Brightness was also improved by 13~14% toward the viewing angle direction. Computational simulations using LightTools$^{TM}$ were also carried out and turned out to be in strong agreement with experimental data. Finally, we could check the feasibility of fabricating low-cost, large area, high performance optical films for commercialization.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.10 s.241
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• pp.1298-1306
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• 2005

In this paper, Part II, we realized the Serpentine Laminating Micromirer (SLM) which was proposed in the accompanying paper, Part I, by means of the injection molding process in mass production. In the SLM, the higher level of chaotic mixing can be achieved by combining two general chaotic mixing mechanisms of splitting/recombination and chaotic advection by the successive arrangement of 'F'-shape mixing units in two layers. Mold inserts for the injection molding process of the SLM were fabricated by SU-8 photolithography and nickel electroplating. The SLM was realized by injection molding of COC (cyclic olefin copolymer) with the fabricated mold inserts and thermal bonding of two injection molded COC substrates. To compare the mixing performance, a T-type micromixer was also fabricated. Mixing performances of micromixers were experimentally characterized in terms of an average mixing color intensity of a pH indicator, phenolphthalein. Experimental results show that the SLM has much better mixing performance than the I-type micromixer and chaotic mixing was successfully achieved from the SLM over the wide range of Reynolds number (Re). The chaotic micromixer, SLM proposed in this study, could be easily integrated in Micro-Total-Analysis- System , Lab-on-a-Chip and so on.

• Journal of Pharmaceutical Investigation
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• v.41 no.3
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• pp.147-151
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• 2011

This paper demonstrates the development of a method for preparing micropatterned microdiscs in order to increase contact area with cells and to change the release pattern of drugs. The microdiscs were manufactured with hot embossing, where a polyurethane master structure was pressed onto both solid and porous microparticles made of polylactic-co-glycolic acid at various temperatures to form a micropattern on the microdiscs. Flat microdiscs were formed by hot embossing of porous microparticles; the porosity allowed space for flattening of the microdiscs. Three types of micro-grooves were patterned onto the flat microdiscs using prepared micropatterned molds: (1) 10 ${\mu}M$ deep, 5 ${\mu}M$ wide, and spaced 2 ${\mu}M$ apart; (2) 10 ${\mu}M$ deep, 9 ${\mu}M$ wide, and spaced 5 ${\mu}M$ apart; and (3) 10 ${\mu}M$ deep, 50 ${\mu}M$ wide, and spaced 50 ${\mu}M$ apart. This novel microdisc preparation method using hot embossing to create micropatterns on flattened porous microparticles provides the opportunity for low-cost, rapid manufacture of microdiscs that can be used to control cell adhesion and drug delivery rates.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.