• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.48 no.1
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• pp.5-18
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• 2016

Electron microscopy is an important investigation and analytical method for the morphological characterization of various cellulosic materials, such as micro-crystalline cellulose (MCC), microfibrillated cellulose (MFC), nanofibrillated cellulose (NFC), and cellulose nanocrystals (CNC). However, more accurate morphological analysis requires high-quality micrographs acquired from the proper use of an electron microscope and associated sample preparation methods. Understanding the interaction of electron and matter as well as the importance of sample preparation methods, including drying and staining methods, enables the production of high quality images with adequate information on the nanocellulosic materials. This paper provides a brief overview of the micro and nano structural analysis of cellulose, as investigated using transmission and scanning electron microscopy.

• Journal of Powder Materials
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• v.9 no.3
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• pp.148-152
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• 2002

The microstructures and indentation fracture of pressureless-sintered $DyNbO_4$ crystalline were investigated as a basic study for the application of weak phase of fibrous monolithic composites. They were comprised with many lamella twins as well as micro-cracks at the grain boundaries. The hardness at room temperature was remarkably low value(575 Hv) due to the low relative density and existence of microcracks at grain boundaries. The main fracture mode was a typical intergranular fracture, and showed remarkable micro-cracking effect. The heavy plastic deformation was observed around the site of indentation. In addition, the $DyNbO_4$ was expected to apply as a weak phase in the fibrous monolithic composites because of the low hardness and easily plastic deformation that could be led the preferable pulled-out and microcracking toughening under the failure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.554-557
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• 2001

In this work, we had synthesis the GaN powder by direct reaction between Ga and NH$_3$at the temperature range of 1000∼1150$^{\circ}C$, and investigated the reaction condition dependence of the GaN yield and some properties of GaN powder. The synthesized powder had Platelet and prismatic shape and showed hexagonal crystalline structure with the lattice constants of a= 3.1895 ${\AA}$, c= 5.18394 ${\AA}$, and the ratio of c/a = 1.6253. The GaN powder synthesis processes were examined based on the oxidation process of mater, and found as combined with mass transport process for the initial stage and diffusion-limited reaction for the extended reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.85-88
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• 2003

In this study, porcelain insulator samples which have a different alumina composition were manufactured in order to test electrical and mechanical properties and make an analysis of the propagation phenomena of micro cracks on porcelain body. From XRD quantitative analysis the crystalline phases were different with alumina composition, sample C and D which have about 17wt% Corundum phase without the Cristobalite phase shows better electrical and mechanical properties than sample A and 8 which have the Cristobalite phase. In dielectrics test on porcelain samples with below 17wt% alumina composition, it was found that the amount of glass phase$(SiO_2)$have an main effect to decrease the dielectric loss$(tan{\delta})$, and the dielectric breakdown voltage of aluminous porcelain insulators was largely affected by its relative density. As a micro cracks analysis, HRS were measured, then the intensity of HRS increased with the amount of alumina composition. On the other hand, the propagation behaviors of cracks was fairly influenced by the distribution of pores.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.353-359
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• 2004

In this study. porcelain insulator samples which have a different alumina composition were manufactured in order to test electrical and mechanical properties and make an analysis of the propagation phenomena of micro cracks on porcelain body. From XRD quantitative analysis the crystalline phases were different with alumina composition, sample C and D which have about l7wt％ Corundum phase without the Cristobalite phase shows better electrical and mechanical properties than sample A and B which have the Cristobalite phase. In dielectrics test on porcelain samples with below l7wt％ alumina composition, it was found that the amount of glass phase(SiO$_2$) have an main effect to decrease the dielectric loss(tan$\delta$), and the dielectric breakdown voltage of aluminous porcelain insulators was largely affected by its relative density. As a micro tracks analysis, HRB were measured, then the intensity of HRB increased with the amount of alumina composition. On the other hand, the propagation behaviors of cracks was fairly influenced by the distribution of pores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.634-637
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• 1999

The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V$_2$O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60 $\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.871-876
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• 2014

Efficiency of crystalline Si solar cell can be maximized as minimizing optical loss through antireflection texturing with inverted pyramids. Even if cost-competitive, soft lithography can be employed instead of photolithography for the purpose, some limitations still remain to apply the soft lithography directly to as-received solar grade wafer with a bunch of micro trenches on surface. Therefore, it is needed to develop a low-cost, effective planarization process and evaluate its output to be applicable to patterning process with PDMS stamp. In this study new surface planarization process is proposed and the change of micro scale trenches on the surface as a function of etching time is observed. Also, the effect of trenches on pattern quality by soft lithography is investigated using FEM structural analysis. In conclusion it is clear that the geometry and shape of trenches would be basic considerations for soft lithography application to low quality wafer.

• Composites Research
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• v.32 no.3
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• pp.141-147
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• 2019

In this study, micro-sized and nano-sized pure aluminum (Al) powders were compressed by unidirectional pressure at room temperature. Although neither type of Al bulk was heated, they had a high relative density and improved mechanical properties. The microstructural analysis showed a difference in the process of densification according to particle size, and the mechanical properties were measured by the Vickers hardness test and the nano indentation test. The Vickers hardness of micro Al and nano Al fabricated in this study was five to eight times that of ordinary Al. The grain refinement effect was considered to be one of the strengthening factors, and the Hall-Petch equation was introduced to analyze the improved hardness caused by grain size reduction. In addition, the effect of particle size and dispersion of aluminum oxide in the bulk were additionally considered. Based on these results, the present study facilitates the examination of the effect of particle size on the mechanical properties of compacted bulk fabricated by the powder metallurgy method and suggests the possible way to improve the mechanical properties of nano-crystalline powders.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.246-251
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• 2014

Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline silicon wafer which is high-efficiency solar cell material that has been widely studied. Interstitial oxygen (Oi) is the main impurity in the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication. We have demonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency. The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. Moreover, we have found that the critical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD).