GaN 미세 분말의 합성과 특성

Synthesis of GaN micro-scale powder and its characteristics

  • 조성룡 (한밭대학교 신소재공학부) ;
  • 여용운 (한밭대학교 신소재공학부) ;
  • 이종원 (한밭대학교 신소재공학부) ;
  • 박인용 (한밭대학교 신소재공학부) ;
  • 김선태 (한밭대학교 신소재공학부)
  • 발행 : 2001.07.01

초록

In this work, we had synthesis the GaN powder by direct reaction between Ga and NH$_3$at the temperature range of 1000∼1150$^{\circ}C$, and investigated the reaction condition dependence of the GaN yield and some properties of GaN powder. The synthesized powder had Platelet and prismatic shape and showed hexagonal crystalline structure with the lattice constants of a= 3.1895 ${\AA}$, c= 5.18394 ${\AA}$, and the ratio of c/a = 1.6253. The GaN powder synthesis processes were examined based on the oxidation process of mater, and found as combined with mass transport process for the initial stage and diffusion-limited reaction for the extended reaction.

키워드