• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.155-159
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• 2008

In this work, we report synthesis of free-standing ZnO/Zn core-shell micro-polyhedrons using metal Zn pellets as a source material by the thermal chemical vapor deposition process. Scanning and transmission electron microscopy measurements were introduced to investigate morphologies and structural properties of as-grown ZnO/Zn core-shell micro-polyhedrons. It was found that micro-polyhedrons were composed of inner single-crystalline metal Zn surrounded by single-crystalline ZnO nanorod arrays. The inner single crystalline metal Zn with micro-scale diameter has a hexagonal crystal structure. Diameter and height of ZnO nanorods covering the metal Zn surface are below 10 nm and 100 nm, respectively. It was also confirmed that c-axis oriented ZnO nanorods are single crystalline with a hexagonal crystal structure.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.362-369
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• 2011

In this paper, optimal deep reactive ion etching (DRIE) process conditions for fused quartz were experimentally determined by Taguchi method, and fused quartz-based micro cantilevers were fabricated. In addition, comparative study on Q-factors of fused quartz and silicon micro cantilevers was performed. Using a silicon layer as an etch mask for fused quartz DRIE process, different 9 flow rate conditions of $C_4F_8$, $O_2$ and He gases were tested and the optimum combination of these factors was estimated. Micro cantilevers based on fused quartz were fabricated from this optimal DRIE condition. Through conventional silicon DRIE process, single-crystalline silicon micro cantilevers whose dimensions were similar to those of quartz cantilevers were also fabricated. Mechanical Q-factors were calculated to compare intrinsic damping properties of those two materials. Resonant frequencies and Q-factors were measured for the cantilevers having fixed widths and thicknesses and different lengths. The Q-factors were in a range of 64,000 - 108,000 for fused quartz cantilevers and 31,000 - 35,000 for silicon cantilevers. The experimental results supported that fused quartz had a good intrinsic damping property compared to that of single crystalline silicon.

• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.339-355
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• 2004

Locality of domestic high-Ca limestones can be divided into three districts, i.e., (1) the Jecheon-Danyang area, (2) the Samcheok-Taebaek-Jungsun area, and (3) the Uljin-Andong area, in accordance with their geologic background and type of the deposits. Except for some crystalline limestones from the Jecheon-Danyang area, domestic high-Ca limestones were mostly recrystallized and Ca-enriched by the effects of hydrothermal alteration and/or thermal metamorphism. The lime-stones can be also divided into crystalline limestone type, marble type, micro- and mega-crystalline calcite types on the basis of their composition, crystallinity, and mineral facies. An applied-mineralogical characterization of the high-Ca limestones was done through the systematic analyses and tests for the limestones. The high-Ca limestones from the area (1), which are megascopic ally close to the original limestone in lithology, display lower whiteness, higher contents of CaO (51 ～ 54 wt.%), low crystallinity, and fine-grained texture. Two typical hydrothermal types of the high-Ca limestones from the area (2), i.e., micro- (mostly 0.2～0.3 mm) and mega-crystalline (2～15 em) calcite types, have comparatively higher whiteness and rather variable CaO contents (50～55 wt.%) with exhibiting quite different crystallinity each other. The micro-crystalline calcite type is especially dominant in this area, and has comparatively uniform crystallinity and homogeneous composition. Compared to these limestones, the high-Ca limestones from the area (3) show remarkable differences in grade and quality according to their types of deposit and occurrence. Based on these mineral characters and chemical composition, a possible scheme for industrial uses of the domestic high-Ca limestones was suggested.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.239-244
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• 2011

In this paper, we analyzed the electrical characteristics with crack pattern in crystalline solar cell. crystalline solar cells with a thin substrate, even small shocks can be easily damaged. Before the module goes through many processes, because the solar cells are at risk of a crack. That occurred early in the PV module micro-crack is not easily detection by eye test or output test. Because the EL (Electroluminescence) device has been detected using. PV module is made by laminated of a variety of materials. By different properties of each material will affect the crack. For this reason, the crack will grow and affect the output. And We analyzed the three crack patterns in crystalline solar cell. A growth of cracks on crystalline solar cell was interpreted by analysing generated cracks on the PV modules. Based on this interpretation, an electrical output value was calculated by mathematical modeling on electrical output characteristic with each crack patterns.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.3
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• pp.407-412
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• 2012

This study investigated the process of thermal-induced growth of micro-crack developed at the crystalline solar cell using EL image, determined the output characteristic according to the pattern of micro-crack, analyzed the I-V characteristic according to the pattern of crack growth, and predicted the output value using simulation. The purpose of this study was, therefore, to investigate the process of thermal-induced growth of micro-crack developed at the early stage of PV module completion using EL image, to analyze the resulting decrement of output and predict the output value using simulation. It was observed that the crack grew increasingly by the thermal condition, and accordingly the lowering of output was accelerated. The output values of crack patterns with various direction were predicted using simulation, resulting in close I-V curve with only around 4% of error rate. It is considered that it is possible to predict the electric characteristic of solar cell module using only pattern of micro-crack occurred at solar cell based on our results.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.29-33
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• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.218-223
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.82-85
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).