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A Study on the Micro-lapping process of Sapphire Wafers for optoelectronic devices  

황성원 (전북대학교 대학원 기계공학과)
신귀수 (전북대학교 기계항공시스템공학부)
김근주 (전북대학교 기계항공시스템공학부)
서남섭 (전북대학교 기계항공시스템공학부)
Publication Information
Journal of the Korean Society for Precision Engineering / v.21, no.2, 2004 , pp. 218-223 More about this Journal
Abstract
The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.
Keywords
Sapphire wafer; Full width at half maximum; Surface default; AFH; Surface roughness;
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Times Cited By KSCI : 3  (Citation Analysis)
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